SIEMENS PNP Silicon AF Transistors @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz @ Complementary types: BCW 60, BCX 70 (NPN) vPS05161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BCW 614A BAs Q62702-C452 B E C | SOT-23 BCW 61B BBs Q62702-C 1585 BCW 61C BCs Q62702-C1478 BCW 61 D BDs Q62702-C1556 BCW 61 FF BFs Q62702-C1890 BCW 61 FN BNs Q62702-C 1891 BCX 71G BGs Q62702-C1482 BCX 71H BHs Q62702-C1586 BCX 71J BJs Q62702-C1554 BCX 71K BKs Q62702-C 1654 1) For detailed information see chapter Package Outlines. Semiconductor Group 860 5.91SIEMENS BCW 61 BCX 71 Maximum Ratings Parameter Symbol Values Unit BCW 61 |BCW 61 FF] BCX 71 Collector-emitter voltage Veto 32 32 45 Vv Collector-base voltage Vcpo 32 32 45 Emitter-base voltage VeBo 5 Collector current Ic 100 mA Peak collector current To 200 Peak base current Tom 200 Total power dissipation, Ts = 71 C | Prot 330 mw Junction temperature Ti 150 Cc Storage temperature range Tstg - 65... + 150 Thermal Resistance Junction - ambient) Rea <310 KW Junction - soldering point Rhus < 240 1 Package mounted on epoxy peb 40 mm x 40 mm 1.5 mm/6 cm? Cu. Semiconductor Group 861SIEMENS BCW 61 BCX 71 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vierjceo Vv Ic=10mA BCW 61, BCW 61 FF 32 - ~ BCX 71 45 - - Collector-base breakdown voltage Vieryeao Ico=10yA BCW 61, BCW 61 FF 32 - ~ BCX 71 45 - - Emitter-base breakdown voltage Venes | 5 - - le=1 iA Collector cutoff current Teso Vea = 32 V BCW 61, BCW 61 FF ~ - 20 nA Ves = 45 V BCX 71 - - 20 nA Ves = 32 V, Ta= 150C BCW 61, BCW 61 FF - - 20 pA Vea = 45 V,7Ta= 150C BCX71 - - 20 pA Emitter cutoff current Tepo - - 20 nA Ves =4V DC current gain?) Are - Ie =10 pA, Vee=5V BCW 61 A, BCX 71 G 20 140 |- BCW 61 B, BCX 71H 30 200 |- BCW 61 FF, BCW 61 C, BCX 71 J 40 300 [- BCW 61 FN, BCW 61 D, BCX 71K 100 |460 |- Ic=2mA, Vcee=5V BCW 61 A, BCX 71G 120 170 220 BCW 61 B, BCX 71H 180 |250 | 310 BCW 61 FF, BCW 61 C, BCX 71 J 250 350 | 460 BCW 61 FN, BCW 61 D, BCX 71 K 380 500 630 Ie = 50 mA, Vee=1V BCW 61 A, BCX 71G 60 - - BCW 61 B, BCX 71H 80 - - BCW 61 FF, BCW 61 C, BCX 71 J 100 |- - BCW 61 FN, BCW 61 D, BCX 71K 110 |- - 1) Pulse test: :< 300 us, Ds 2 %. Semiconductor Group 862SIEMENS BCW 61 BCX 71 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-ernitter saturation voltage) Veesat Vv Is=10mA, Jn =0.25mMA - 0.12 |0.25 Ic = 50 mA, Ja = 1.25 mA - 0.20 | 0.55 Base-emitter saturation voltage") Veesat Ic=10MA, Je = 0.25 mA - 0.70 | 0.85 Te = 50 mA, Je = 1.25 MA - 0.83 1.05 Base-emitter voltage *) Vee fon} Ie=10pA, Vee=5V ~ 0.52 |- Ic= 2mMA, Vee =5V 0.55 {0.65 [0.75 Ie = 50 mA, Voe=1V - 0.78 |~ AC characteristics Transition frequency f ~ 250 |- MHz Ic = 20 MA, Vee = 5 V, f= 100 MHz Output capacitance Cobo - 3 ~ pF Vea = 10 V, f= 1 MHz Input capacitance Cobo - 8 - Ves = 0.5 V, f= 1 MHz Short-circuit input impedance hite ko Ic=2 MA, Vce = 5 V, f= 1 KHz BCW 61 A, BCX 71G ~ 2.7 - BCW 61 B, BCX 71H - 3.6 - BCW 61 FF, BCW 61 C, BCX 71 J - 45 - BCW 61 FN, BCW 61 D, BCX 71 K - 75 ~ Open-circuit reverse voltage transfer ratio hie 10-4 Ie=2MA, Vor =5V, f= 1 kHz BCW 61 A, BCX 71G - 1.5 - BCW 61 B, BCX 71H - 2.0 - BCW 61 FF, BCW 61 C, BCX 71 J - 2.0 ~ BCW 61 FN, BCW 61 D, BCX 71K 3.0 1) Pulse test: +< 300 us, Ds 2%. Semiconductor Group 863SIEMENS BCW 61 BCX 71 Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. AC characteristics Short-circuit forward current transfer ratio hzie - Ic=2mA, Vee=5V, f= 1 kHz BCW 61 A, BCX 71G - 200 - BCW 61 B, BCX 71H - 260 - BCW 61 FF, BCW 61 C, BCX 71 J - 330 - BCW 61 FN, BCW 61 D, BCX 71 K ~ 520 - Open-circuit output admittance hove us Ic=2 mA, Vee =5 V, f= 1 kHz BCW 61 A, BCX 71G ~ 18 -~ BCW 61 B, BCX 71H - 24 ~ BCW 61 FF, BCW 61 C, BCX 71 J = 30 ~ BCW 61 FN, BCW 61 D, BCX 71 K - 50 ~ Noise figure F dB Ie=0.2 MA, Vee=5V, Rs =2kQ f= 1 kHz, af= 200 Hz BCW 61 A to BCX 71K - 2 ~ BCW 61 FF, BCW 61 FN - 1 2 Equivaient noise voltage Vn - - 0.11 | pV Ie = 0.2 mA, Vee = 5 V, Rs =2kQ f= 10Hz ... 50 Hz BCW 61 FF, BCW 61 FN Semiconductor Group 864SIEMENS BCW 61 BCX 71 Total power dissipation Pio = f (Ta"; Ts) Collector-base capacitance Ccxo = f (Vcxo) * Package mounted on epoxy Emitter-base capacitance Creo = f (Vexo) 400 Rew 1/Bex 71 EHPOOS43 12 n EHPOOSs4 Copo F mW (Cepo) Prat 10 300 N N \ 8 \ r, 200 6 aN N \ 100 2 0 > 0 0 50 100 C 150 to"! 19 y 10! msi T, > Veao (Vino) Permissible pulse load Pict max/Piooc = f (tp) Transition frequency fr = f (/c) Vce=5V so? 61/BCX 7t EHPOOS45 103 BCW tHPOOs47 MHz 5 Pi tot max 5 fot OC 107 Ih F 10 i TTS. 10! ; ; 107 107 a re to? 5s 0 10 5 10! 5107 mA 10 - fo + I, Semiconductor Group 865SIEMENS Base-emitter saturation voltage Ic = f (Veesat) hre = 40 102 BCw 61 71 EHPO0S48 I, mA 10! 10 109 0.2 04 06 08 Vo 1.2 > Vee sot Collector current Ic = f (Vae) Vee=5V BCW 61/8CX 71 EHPOO350 102 I, mA | 10! 5 100C 25C f/-50C 0 0.5 v 1.0 > Vor Semiconductor Group BCW 61 BCX 71 Collector-emitter saturation voltage Ic = f (Veesat) hre = 40 1 02 BCw 61 n EHPO0349 I, mA 10! 10 109 0.1 02 0.3 - Veesot 0.4 V 0.5 DC current gain hre = f (Jc) Vee =5V BCW 61 71 EHPOO3S! 10 5 Mee ! | 102 5 10! 10 an 10 866SIEMENS BCW 61 BCX 71 Collector cutoff current Iczo = f (Ta) h parameter he = f (Ic) Vcee=5V 104 Bew 61/BCX 71 EHPOO0352 10? acw 61 71 CHPOO3SS nA feo A 103 10! 2 10 5 10! 10 5 108 ~ -1 105 50 100 *C 150 on 5 10 mA 10! +. I, ele h parameter he = f (Vce) Ic=2MA 0 BCW 61/8CX 71 EHPOO354 h, . I,=2mA 0.5 0 10 2 30 > Nee Semiconductor Group Noise figure F = f (Vce) Ic = 0.2 mA, Rs = 2 kQ, f= 1 kHz __-rm 867 20 bcw 61 dB 107" WW EHPOOSSS toh Ver 10?SIEMENS BCW 61 BCX 71 Noise figure F = f (/) Noise figure F = f (Ic) Ie = 0.2 mA, Rs = 2 kO, Vee = 5 V Vce = 5 V, f= 120 Hz 20 5t nN EMPO0356 20 eCw 61 A HPO03S7 F r 38 ts 10 5 10' kHz 107 f 0 1? 86407 10 Noise figure F = f (ic) Vee = 5 V, f= 1 kHz 2 Bow si/ecx 71 EHPO0358 F a8 {is 10 10 ma to + [, 0 1073107? 107" Semiconductor Group 0 1072107 10s ma tt! r I, Noise figure F = f (/c) Vcr = 5 V, f= 10 kHz Bcw 61/@CX 7% EHPOO3S9 868 20 dB 10 ma 10! |i, 0 o> ) 107? to