DO 4 DO5 (CB 33) (CB 34) Silicon rectifier diodes -- Normal series Diodes de redressement au silicium Sries normales Ve/ te in /VRAM Tip) lFsmM (Vv) (A) {mA} Type Case VRRM (C) (A) 25C 25C DRT 76 Boitier (Vv) max Ig (A) tp 10 ms max max Page +N 1587 004 600 175 3 Tease 150 OC 40 15! 3 5! 104 42 R2 oo4 200 150 6 Tease 125 OC 75 1326 4,57 133 44 R2 DO4 400 160 6 Tease 125 OC 75 13. 6 2,5? 133 46 R2 Do4 600 150 6 Tease 125 C 75 13 6 1,57 133 48 R2 po4 800 150 6 Tease 125 C 75 1,3 6 1? 133 62 R2 DO4 200 150 12 Tease 125 OC 150 1312 457 137 64 R2 DO 4 400 150 12 Toase 125 C 150 13.12 2,5? 137 66 R2 DO4 600 150 12 Toase 125 OC 150 13 12 1,57 137 68 R2 D004 800 150 12 Tease 125 OC 150 13.12 1? 137 * Tease 150 C 2 Tiyj) 150 OC Silicon rectifier diodes - Normal series Diodes de redressement au silicium Sries normales ve/ le IR / YRAM Tiyj) lFsm (Vv) {A) (mA) Type Case VRRM (C} (A) 25 C Tiyj) 150C | DRT 76 Boitier (Vv) max Ig (A) tp 10 ms max max Page 1N 248 B DOS 50 175 20 Tease 150 C 250 1,5' 50 5! 89 1N 249 B DO5 100 178 20 Tease 150 C 250 1,5! 50 5! 89 1N 250 B DO 5 200 175 20 Tease 150 OC 250 15/50 5! 89 IN 1195A DO5 300 175 20 Tease 150 OC 350 1,2! 20 64! 97 1N 1196 A pos 400 175 20 Tease 150 C 350 1,2! 20 5! 97 1N 1197A dO 5 500 175 20 Tease 150 C 350 1,2! 20 44} 97 iN 1198 A DO5 600 175 20 Tease 150 OC 350 1,27 20 3! 97 22 R2 DOS 200 150 20 Tease 120 C 250 1,3 20 45 125 24.R2 DOs 400 150 20 Tease 120 C 250 1,3 20 2,5 125 26 R2 DO 5 600 150 20 Toase 120 C 250 13. 20 15 125 28 R2 DO5 800 150 20 Tease 120 C 250 1,3 20 1 125 30 R2 DOs 1000 150 20 Tease 120 C 250 1,3 20 1 125 32 R2 DOs 200 160 35 Tease 110 OC 500 13 35 45 129 34R2 DOS 400 150 35 Tease 110 C 500 13 35 4,5 129 36 R2 DO5 600 150 35 Tease 110 OC 500 13 35 45 129 38 R2 bos 800 150 35 Toase 110 C 500 13 36 3 129 ' Tease 180 C 102