BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM RATINGS: (TA=25C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICES ICES BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) Cob NF ton ton hFE hFE hFE hfe SYMBOL VCEO VCBO VEBO IC PD TJ, Tstg JA CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=32V VCE=32V, TA=150C IC=2.0mA 32 IE=1.0A 5.0 IC=10mA, IB=250A IC=50mA, IB=1.25mA IC=10mA, IB=250A 0.60 IC=50mA, IB=1.25mA 0.68 VCE=5.0V, IC=2.0mA 0.60 VCB=10V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0k, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990, IB1=IB2=1.0mA VCE=5.0V, VCE=5.0V, VCE=1.0V, VCE=5.0V, IC=10A IC=2.0mA IC=50mA IC=2.0mA, f=1.0kHz BCW61B MIN MAX 30 140 310 80 175 350 UNITS V V V mA mW C C/W 32 32 5.0 100 350 -65 to +150 357 MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 UNITS nA A V V V V V V V pF 6.0 150 800 dB ns ns BCW61C MIN MAX 40 250 460 100 250 500 BCW61D MIN MAX 100 380 630 100 350 700 R2 (20-November 2009) BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BCW61C : BCW61D : BB BC BD R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m