MP4410
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4410
High Power, High Speed Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
4-V gate drivability
Small package by full molding (SIP 12 pin)
High drain power dissipation (4-device operation)
: PT = 28 W (Tc = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.12 (typ.)
Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
I
DSS = 100 μA (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGSS ±20 V
Drain current ID 5 A
Peak drain current IDP 20 A
Drain power dissipation
(1-device operation)
PD 2.2 W
Ta = 25°C 4.4
Drain power dissipation
(4-device operation) Tc = 25°C
PT 28
W
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA 2-32C1D
Weight: 3.9 g (typ.)
5
4
2 3
1
6
12
11
9 10
8
7
MP4410
2006-10-27
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Marking
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance of channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a) 28.4 °C/W
Thermal resistance of channel to case
(4-device operation, Tc = 25°C)
ΣRth (ch-c) 4.46 °C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL 260 °C
This transistor is an electrostatic-sensitive device. Please handle with caution.
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 μA
Drain cut-off current IDSS VDS = 60 V, VGS = 0 V 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 2.0 V
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.0 5.0 S
ID = 2.5 A, VGS = 4 V 0.21 0.31
Drain-source ON resistance RDS (ON)
ID = 2.5 A, VGS = 10 V 0.12 0.16
Input capacitance Ciss 370 pF
Reverse transfer capacitance Crss 60 pF
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
180 pF
Rise time tr 18
Turn-on time ton 25
Fall time tf 15
Switching time
Turn-off time toff
VIN: tr, tf < 5 ns, dutys cycle 1% 170
ns
Total gate charge
(gate-source plus gate-drain)
Qg 12 nC
Gate-source charge Qgs 8 nC
Gate-drain (“miller”) charge Qgd
ID = 5 A, VGS = 10 V, VDD = 48 V
4 nC
10 V VIN
12
VDD 30 V
ID = 2.5 A
VOUT
10 μs
0 V
MP4410
JAPAN Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
MP4410
2006-10-27
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Source-Drain Diode Rating and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current IDR 5 A
Peak drain reverse current IDRP 20 A
Diode forward voltage VDSF IDR = 5 A, VGS = 0 V 1.7 V
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Maximum forward current IFM 5 A
Reverse current IR VR = 120 V 0.4 μA
Reverse voltage VR IR = 100 μA 120 V
Forward voltage VF I
F = 1 A 1.8 V
MP4410
2006-10-27
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RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.