ky, SGS-THOMSO Sf, Sora BYW51(F) HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES a SUITED FOR SMPS a VERY LOW FORWARD LOSSES # NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY a HIGH AVALANCHE ENERGY CAPABILITY a INSULATED VERSION (ISOWATT220AB) : Insulating voltage = 2000 V DC Capacitance = 12 pF DESCRIPTION Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. A2 p isolated Packaged in TO220AB, or ISOWATT220AB this TO220AB ISOWATT220AB device is intended for use in low voltage, high (Plastic) (Plastic) frequency inverters, free wheeling and polarity protection applications. BYW51-200 BYW51F-200 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit lF(RMS) | RMS forward current Per diode 20 A lF(Av) | Average forward current |TO220AB To=120C_|Perdiode 10 A 5=0.5 ISOWATT220AB |Tc=95C | Perdiode 10 lFSM Surge non repetitive forward current tp=10ms__| Perdiode 100 A sinusoidal Tstg Storage and junction temperature range - 65 to+ 150) C Tj - 65 to+ 150) C BYW51-(F) ; Symbol Parameter Unit 50 100 150 200 VRRM Repetitive peak reverse voltage 50 100 150 200 v August 1993 Ed1B Me 79e9e3? 0059917 715 1/5 151BYW51(F) THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-c) | Junction to case TO220AB Per diode 2.5 C/W Total 1.4 ISOWATT220AB | Perdiode 5.1 Total 4.05 Rth (c) Coupling TO220AB 0.25 C/W ISOWATT220AB 3.0 When the diodes 1 and 2 are used simultaneously : Tj-Te (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Test Conditions Min. | Typ. | Max. | Unit In Ty = 25C Vr = VaRM 15 yA T, = 100C 1 mA VF T, = 125C IF=8A 0.85 | V Tj = 125C IF=16A 1.05 Tj = 25C IF=16A 1.15 Pulse test: *tp=5 ms, duty cycle <2% tp = 380 ps, duty cycle<2% To evaluate the conduction losses use the following equation : P = 0.65 x lFiav) + 0.025 x IF(RMS) RECOVERY CHARACTERISTICS Symbol Test Conditions Min. | Typ. | Max. | Unit trr Tj = 25C lr = 0.5A Irr=0.25A 25 ns IR=1A lp=1A dle/dt = -50A/us 35 Vr = 30V tfr Tj = 25C IF=1A tr=10ns 15 ns Ver = 1.1 x Ve Vere Tj = 25C IF=1A tr=10ns 2 Vv 2/5 Me 79e9e3? 0059918 651 152Fig.1 : Average forward power dissipation versus average forward current. 4 Pr(avyW) z I | I 12 _=01 8-0 6-05 =1 [| 5 LA: Zo : / > | | | a ZO Fava) f ay T/L, > MV wm 6 =tp/T 0 0123465 67 8 9 1011121314 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 0 1-75 Frin405 1.50 1.25 1.00 0.75 0.50 0.25 IFM(A) 0.00 O.4 1 10 100 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. BYW51(F) Fig.2 : Peak current versus form factor. 200 175 150 125; 100 75 50 25 5 oO 0 0.1 6.2 0.3 0.4 0.5 0.6 0.7 08 09 1 Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (TO220AB) (ISOWATT220AB) kK ; K 5 re Zthij-c) (tp. 8- = TH Zin(-c) (tp. 5) | |, all Lo Rth(6) eer LE Rth(j-c) | Lat IIH ' 7 _ : | ee 08 La i; fl 0.5 5-0 5 LiF * | i ! ' 5-05, , | | | | 0.2 C1 ua 06 TTI, on at i Py t YW i 60,174 ra 4 i 650.2 | Lot | (| i! | a | | | | | 0.4 eo T tt HH 02. Le T ee | i | T . Single pulse " &0.1--77 Single pulse | | | 0.2 HH} 3 | tp/T ] | f | 8 tp/T a YO A 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1,0E+01 3/5 Me 7929237 0059939 556 153BYW51(F) Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO220AB) \ 120 M4) 110 100 90 80 70 60 50 40 30 Tes75C 20 Te=1 10 0 0.001 0.01 0.1 1 Fig.8 Average current versus ambient temperature. (duty cycle : 0.5) (TO220AB) t 12 F(av)(A) " Ath(j-a}=Rth(}-c) 10 9 8 7 6 5 4 3 2 1} =tpT ++ C) 0 20 40 60 80 100 120 140 160 o Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) 50 tt ptt} | F=1Mhz Tj=25 C 1 | VR(V) 10 L \ LL 1 10 100 200 4/5 154 me 792923? 0059920 Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWATT220AB) go MIA 70 60 50 40 30 alli F A. 10 520.5 t(s) 0001 0.01 0.1 1 Fig.9 Average current versus ambient temperature. (duty cycle : 0.5) (ISOWATT220AB) IF(av)(A) 1 a 40 Rth(j-a}=Rth(j-c)___| 9 t T 8 _ t 7 Rth(]-a)=15 ecm 6 L- 5} 8205 iS | T ~~ XL al ! \ [ SY X al KN 1} 8 =tpT }Tamo(e6) 78 0 60 80 100 120 140 160 Ls) b o Fig.11 : Recovery charges versus dlF/dt. QRR(nC) 500 90% CONFIDENCE Tj=1250C IF=IF(av) 100 dIF/dt(A/us) 10 20 50 100 6200 500 cOT =BYW51(F) Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic parameters versus junction 90% CONFIDENCE Tj=1250C IF=IF(av) 20 GIF/dt( A/us) 50 temperature. 1.25 1.00 0.75 0.50 0.25 0.00 100 200 500 Q 25 50 M 7929237 0059921 146 a QRRRM[T|/OQRA;IRM[Tj=125C] 50 150 5/5 155