2N3467 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (oC)200 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0 @I(B) (A) (Test Condition)100m h(FE) Min. Current gain.40 h(FE) Max. Current gain.125 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq175M @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)10 t(d) Max. (s) Delay time.10n t(r) Max. (s) Rise time30n t(on) Max. (s) On time.