SO T4 57 BAS21AVD High-voltage switching diodes Rev. 1 -- 10 January 2011 Product data sheet 1. Product profile 1.1 General description Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High switching speed: trr 50 ns Reverse voltage: VR 200 V Repetitive peak reverse voltage: VRRM 250 V Small SMD plastic package Low capacitance: Cd 5 pF AEC-Q101 qualified Repetitive peak forward current: IFRM 1 A 1.3 Applications High-voltage switching in surface-mounted circuits Automotive Communication 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Per diode forward current [1][2] - - 200 mA IR reverse current [1] - 25 100 nA VR reverse voltage - - 200 V - 16 50 ns IF trr reverse recovery time VR = 200 V [3] [1] Pulse test: tp 300 s; 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA. BAS21AVD NXP Semiconductors High-voltage switching diodes 2. Pinning information Table 2. Pinning Pin Description 1 anode (diode 1) 2 anode (diode 2) Simplified outline 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 6 5 4 1 2 3 Graphic symbol 6 5 1 2 4 3 006aab106 3. Ordering information Table 3. Ordering information Type number BAS21AVD Package Name Description Version SC-74 plastic surface-mounted package; 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code BAS21AVD E6 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 250 V - 200 V - 200 mA - 1 A tp = 10 s - 16 A tp = 100 s - 8 A tp = 10 ms - 2 A Per diode BAS21AVD Product data sheet VRRM repetitive peak reverse voltage VR reverse voltage IF forward current IFRM repetitive peak forward current tp 1 ms; 25 % IFSM non-repetitive peak forward current square wave [1][3] All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 [2] (c) NXP B.V. 2011. All rights reserved. 2 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 250 mW Per device; one diode loaded Tamb 25 C total power dissipation Ptot [3] [4] - 295 mW Tj junction temperature - 150 C Tamb ambient temperature -65 +150 C Tstg storage temperature -65 +150 C [1] Pulse test: tp 300 s; 0.02. [2] Tj = 25 C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - - 500 K/W [2] - - 425 K/W [3] - - 140 K/W Per device; one diode loaded Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. 7. Characteristics Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA - - 1 V - - 1.25 mV IR reverse current VR = 200 V - 25 100 nA - - 100 A - 0.6 5 pF - 16 50 ns Per diode IF = 200 mA [1] VR = 200 V; Tj = 150 C Cd BAS21AVD Product data sheet diode capacitance f = 1 MHz; VR = 0 V [2] trr reverse recovery time [1] Pulse test: tp 300 s; 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes mbg384 600 mle165 102 IF (mA) IFSM (A) (1) (2) (3) 400 10 200 0 1 0 1 VF (V) 1 2 10 102 103 104 105 tp (A) (1) Tj = 150 C; typical values Based on square wave currents. (2) Tj = 25 C; typical values Tj = 25 C; prior to surge (3) Tj = 25 C; maximum values Fig 1. Forward current as a function of forward voltage Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg381 102 IR (A) 10 (1) 1 (2) 10-1 10-2 0 100 Tj (C) 200 (1) VR = VRmax; maximum values (2) VR = VRmax; typical values Fig 3. Reverse current as a function of junction temperature BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes mle166 0.6 mle167 300 Cd (pF) VR (V) 0.5 200 0.4 100 0.3 0 0.2 0 10 20 30 0 40 50 100 VR (V) f = 1 MHz; Tj = 25 C Fig 4. 150 200 Tamb (C) FR4 PCB, standard footprint Diode capacitance as a function of reverse voltage; typical values Fig 5. Reverse voltage as a function of ambient temperature; derating curve mbg442 300 IF (mA) 200 100 0 0 100 Tamb (C) 200 FR4 PCB, standard footprint Fig 6. Forward current as a function of ambient temperature; derating curve BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 SAMPLING OSCILLOSCOPE trr t Ri = 50 V = VR + IF x RS (1) 90 % VR mga881 input signal output signal (1) IR = 3 mA Fig 7. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm Fig 8. BAS21AVD Product data sheet 04-11-08 Package outline SOT457 (SC-74) All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 BAS21AVD BAS21AVD Product data sheet SOT457 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 11. Soldering 3.45 1.95 0.45 0.55 (6x) (6x) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6x) Dimensions in mm 0.8 (6x) 2.4 Fig 9. sot457_fr Reflow soldering footprint SOT457 (SC-74) 5.3 1.5 (4x) solder lands 1.475 0.45 (2x) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6x) 2.85 sot457_fw Fig 10. Wave soldering footprint SOT457 (SC-74) BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS21AVD v.1 20110110 Product data sheet - - BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS21AVD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 10 January 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 12 BAS21AVD NXP Semiconductors High-voltage switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 January 2011 Document identifier: BAS21AVD