pero ee P Poe Ps sites? FE FS LORAL/FREQUENCY/SEMICOND ND 96p 00802 DB 7-O7-/P 90-VOLT 56 D MM 5579621 0000802 7 mm SILICON TUNING VARACTORS a DESCRIPTION The GC1800 series tuning varactors are silicon abrupt junc- tion devices. They offer the highest Q and lowest resistance available in 90 volt tuning diodes. A unique silicon dioxide passivation process assures greater stability, reliability, and low leakage currents at higher temperatures. APPLICATIONS The GC1800 series tuning varactors are used for both narrow and wide band tuning through S-Band, These devices are used in circuits requiring a high QO voltage variable capacitance such as: tunable filters and amplifiers, voltage controlled oscillators, frequency synthesizers and con- tinuous phase shifters. They are also useful as frequency and phase modulators in communications applications. Standard capacitance tolerance is +10%. Diodes can be opti- mized for custom electrical or mechanical specifications upon request. All specifications shown on the following page are based on the style 30 package. Other ceramic or glass packages are available, Chips mounted on carriers with gold wire/ribbon leads are also available. FAEQUENCY SOURCES BEMICONDUCTOR FAVISION 100 = o GC1816 GC1815 GC1814 GC1813 GC1812 GC1811 GC1810 GC1809 GC1808 GC1807 GC1806 GC1806 GC1804 GC1803 GC1802 GC1801 Gc1800 GC1800A 1.0 10 100 Vp (VOLTS) JUNCTION CAPACITANCE (c)) pF y i=] BIAS SCALE INCL FUNCTION FOR SILICON (65.7 VOLTS} Typical Junction Capacitance vs Reverse Bias 14LORAL/FREQUENCY/SEMICOND ND 96D 00803 D7~O7-/9 90-VOLT Tb D MM 5579621 0000603 9 mm SILICON TUNING VARACTORS reer Te RR ELECTRICAL SPECIFICATIONS Ty, = 25C . TOTAL CAPACITANCE? QUALITY FACTOR2 CAPACITANCE RATIO! MODEL (AT -4V, 1 MHz) {AT -4V, 50 MHz) (Cy9/Cygo) NUMBER Cy.4 (pF) Q_, (MIN) (MIN) GC1800A 0.6 1100 5.5 GC1800 0.8 1000 5.5 GC1801 1.0 1000 6.0 GC1802 1.2 900 6.0 GC1803 1.5 900 7.0 GC1804 1.8 850 7.0 GC1805 2.2 850 8.0 GC1806 7 800 8.0 GC1807 3.3 800 8.0 GC1808 3.9 700 8.0 GC1809 4.7 700 8.0 GC1810 5.6 650 8.5 GC1811 6.8 650 8.5 GC1812 8.2 600 8.5 GC1813 10.0 600 9.0 GC1814 12,0 550 9.0 GC1815 15.0 550 9.0 GC1816 18.0 550 9.5 NOTES: 1. THESE VALUES INCLUDE PACKAGE CAPACITANCE OF .18 pF. 2. QISCALCULATED FROM: Q= a WHERE f = 50 MHz AND 27fRC; J R, = SERIES RESISTANCE MEASURED AT 1 GHz USING TRANSMISSION LOSS TECHNIQUES, CAPACITANCE IS MEASURED AT 1 MHz. 3. DUE TO DICE SIZES, STYLES 15 AND 80 THROUGH 89 ARE AVAILABLE FOR GC1800A GC1809 ONLY. WHEN ORDERING, SPECIFY THE DE- SIRED CASE STYLE BY ADDING ITS NUMBER AS A SUFFIX TO THE BASIC PART NUMBER. OTHER CASE STYLES ARE AVAILABLE ON REQUEST. RATINGS Minimum Voltage Breakdown: 90 volts at 10 LA Capacitance- Temperature Maximum Leakage Current: 0.02 WA at 80 volts at 25C Coefficient: 300 ppm/C at Vpz-4v 2.0 BA at 80 volts at 125C ae. oc. ane: (oa q 4 [sags a a oOo ie ie -: FREQUENCY SOURCES BEMICONDUCTOR MVisiON: 15LORAL/FREQUENCY/SEMICOND IND Ss6D 00804 D Fu 07-09 90-VOLI 96 D M@ 5579621 0000804 0 ml SILICON TUNING VARACTORS a PACKAGE STYLES $26. agg NOM ore -| bate * . 1990 . { . Sn 988 O | Bro - fl 33 +1 : GOLD CONTACT . kL | oa , = | |e t = Le lt GOLD BACKING 22 wom oe ise eu : eee | Se SorARR tp tals 2. YoP& BO . taste dso L. EpAWBAF Lee Atoll - Upe Siok prt Oo Style 00 Style 15 Style 30 Style 26 ot so PT as. es it - ay . erie fue O83-ol Leads Pa E EISEAR : : a . . iva ce O22 | tas 603 THK | : 4 e ge ai cote + fazeacese ae Ee i | : C me io G3 o i. ; 9: . Ct * { =F 1-47 g $3 . 7 + 4 an * . A =n _t cH : ; rT nl nee i a ae aan Ss 4 : os Bike . Cpsiter Ups cnt Cpe tepf kee dank to 7 - Cpe ASK Lyx Wott tor 2608 Aps.tint GpntteF Lp tnt Style 36 Style 80 Style 85 Style 88 Style 89 (e) Heat sink end. Dimensions are in inches. Other Package Styles Are Available Upon Request The cathode is the heat sink end of each package. Reverse polarity is available at slightly higher cost. ENGINEERING NOTES: FREQUENCY SOURCES SEMICONDUCTOR 16 TAVIBION