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MMBT3904K Rev. B
MMBT3904K NPN Epitaxial Silicon Transistor
MMBT3904K
NPN Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings Ta = 25°C unless otherwis e noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Widt h≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 200 mA
PCCollector Power Dissipation 350 mW
TJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V
ICEX Collector Cut-off Current VCE = 30V, VEB = 3V 50 nA
hFE DC Current Gain * VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
40
70
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA 0.2
0.3 V
V
VBE(sat) Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA 0.65 0.85
0.95 V
V
Cob Output Capacitance VCB = 5V, IE = 0, f = 1MHz 4pF
fTCurrent Gain-Bandwidth Product VCE = 20V, IC = 10mA, f = 100MHz 300 MHz
NF Noise Figure IC = 100µA, VCE = 5V, RS = 1KΩ
f = 10Hz to 15.7KHz 5dB
tON Turn On Time VCC = 3V, VBE = 0.5V
IC = 10mA, IB1 = 1mA 70 ns
tOFF Turn Off Time VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 250 ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
1AK
Marking
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MMBT3904K Rev. B
MMBT3904K NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
Figure 5. Output Capacitance Figure 6. Power Dissipation vs
Ambient Temperature
0.1 1 10 100
50
100
150
200
250 Vce=5V
125C
75C
25C
hfe, Current Gain
C o llect o r Curre nt, [mA]
0.1 1 10 100
0.1
0.2
0.3
B=10
125C
75C
25C
Vce(sat), Saturat ion Current ,[V]
Colle ct or C u r r ent, [A]
0.1 1 10 100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 B=10
125C
75C
25C
Vbe(sat), Saturation Current,[V]
Colle ctor C urren t, [A ] 25 50 75 100 125 150
1
10 VCB = 30V
Leakage current of Collector - Base(nA)
Temperature, ['C ]
1 10 100
0.1
1
10
IE = 0
f = 1 MHz
Cob [pF], Capacitance
VCB [V], Collec to r-Base Voltag e 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
PD - Power Dissipation (W)
Temperature, [ OC]
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MMBT3904K Rev. B
MMBT3904K NPN Epitaxial Silicon Transistor
Mechanical Dimensions
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
Dimensions in Millimeters
TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
MMBT3904K NPN Epitaxial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life suppor t devices or syst ems are devices or s ystems which,
(a) are intend ed f or surg ica l implant int o the bod y, or (b ) sup por t
or sustain life , or (c) whose failure to pe rform when properly used
in accordance with instru ctions for use pr ovided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical compon ent is any compone nt of a life support de vice
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the desig n specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminar y da ta, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time witho ut notic e in or de r to impro ve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to mak e changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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MMBT3904K Rev. B
