©2003 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05, RFD16N05SM, UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pul s e d D rai n C u r re n t (No te 3 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 16
Refer to Peak Current Curve A
Gate to Sou rc e Volta g e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS ±20 V
Pulsed Aval a nche Ra tin g. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to Figure 5
Power Dis sipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate abov e 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
0.48 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
P ackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 150oC--25µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 16A, VGS = 10V (Figure 9) - - 0.047 Ω
Turn-On Time t(ON) VDD = 25V, ID = 8A, RL = 3.125Ω,
VGS = 10V, RGS = 25Ω
(Figure 13)
- - 65 ns
Turn-On Delay Time td(ON) -14- ns
Rise Time tr-30- ns
Turn-Off Delay Time td(OFF) -55- ns
Fall Ti me tf-30- ns
Turn-Off Time t(OFF) - - 125 ns
Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 40V, ID ≈ 16A,
RL = 2.5Ω
Ig(REF) = 0.8mA
(Figure 13)
- - 80 nC
Gate Charge at 10V Qg(10) VGS = 0V to 10V - - 45 nC
Threshold Gate Charge Q(TH) VGS = 0V to 2V - - 2.2 nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12) - 900 - pF
Output Capacitance COSS - 325 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Thermal Resistance Junction to Case RθJC - - 2.083 oC/W
Thermal Resistance Junction to Ambient RθJA TO-251 and TO-252 - - 100 oC/W
Sour ce to Drain Diode Specificatio ns
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 16A - - 1.5 V
Diode Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/µs - - 125 ns
NOTES:
2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD16N05, RFD16N05SM