BAT 68-07W Silicon Schottky Diodes 3 * For mixer applications in the VHF / UHF range 4 * For high-speed switching applications 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 68-07W 87 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A1200 Package Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 8 Forward current IF 130 mA Total power dissipation, T S = 89 C Ptot 150 mW Junction temperature Tj 150 C Operating temperature range Top -65...+150 C Storage temperature Tstg - 65 ...+150 C V Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA 570 RthJS 410 K/W 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 68-07W Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. V(BR) 8 - - V IR - - 0.1 A IR - - 1.2 nA DC characteristics Breakdown voltage I (BR) = 10 A Reverse current VR = 1 V Reverse current VR = 1 V, TA = 60 C Forward voltage mV VF I F = 1 mA - 318 340 I F = 10 mA 340 390 500 CT - - 1 pF rf - - 10 AC characteristics Diode capacitance VR = 1 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (TA*;TS) * Package mounted on alumina 140 mA TS 120 110 TA IF 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter TA = Parameter F BAT 68... 10 2 mA EHD07101 R TA = -40 25 85 150 10 1 C C C C 10 2 A BAT 68... EHD07102 TA = 150 C 10 1 10 0 85 C 10 0 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.1 0.2 0.3 0.4 10 -3 0.5 V 0.6 0 1 2 3 VF Diode capacitance CT = f (V R) f = 1MHz CT 1.0 pF V 4 VR Differential forward resistance rf = f (IF) f = 10 kHz BAT 68... EHD07103 10 3 rf BAT 68... EHD07104 10 2 0.5 10 1 0 0 1 2 3 V 10 0 10 -1 4 10 1 mA 10 2 F VR Semiconductor Group Semiconductor Group 10 0 44 Sep-09-1998 1998-11-01 BAT 68-07W Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 10 3 VO 10 2 10 1 Testcircuit: D.U.T 1000 500 200 100 50 20 10 0 10 -1 VI R IN 50 CL R L V0 1nF RL=10 10 -2 0 10 10 1 10 2 mV 10 3 VI Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01