BAT 68-07W
Semiconductor Group Sep-09-19981
Silicon Schottky Diodes
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 68-07W 87 Q62702-A1200 1 = C1 2 = C2 SOT-3433 = A2 4 = A1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R8 V
Forward current
I
F130 mA
Total power dissipation,
T
S = 89 °C
P
tot 150 mW
Junction temperature
T
j
150 °C
Operating temperature range °C-65...+150
T
op
Storage temperature
T
st
g
- 65 ...+150 °C
Maximum Ratings
Junction - ambient 1)
R
thJA ≤ 570 K/W
Junction - soldering point
R
thJS ≤ 410
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAT 68-07W
Semiconductor Group Sep-09-19982
Electrical Characteristics at
T
A = 25 °C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.min. typ.
DC characteristics
V
(BR) 8Breakdown voltage
I
(BR) = 10 µA -- V
I
RµA-Reverse current
V
R = 1 V 0.1-
Reverse current
V
R = 1 V,
T
A = 60 °C
I
R- - 1.2 nA
Forward voltage
I
F = 1 mA
I
F = 10 mA
V
F
-
340
318
390
340
500
mV
AC characteristics
Diode capacitance
V
R = 1 V,
f
= 1 MHz
C
T- - 1 pF
Differential forward resistance
I
F = 5 mA,
f
= 10 kHz
r
f- - 10 Ω
Semiconductor Group 2 1998-11-01
BAT 68-07W
Semiconductor Group Sep-09-19983
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on alumina
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
110
120
mA
140
I
F
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
BAT 68-07W
Semiconductor Group Sep-09-19984
Forward current
I
F =
f
(
V
F)
T
A = Parameter
0.0
10
EHD07101BAT 68...
Ι
F
F
V
10
10
10
10
-40 C
A
=
mA
-2
-1
0
1
2
C
25 C85 C150
0.1 0.2 0.3 0.4 0.5 V 0.6
T
Reverse current
I
R =
f
(
V
R)
T
A = Parameter
0
10
EHD07102BAT 68...
Ι
R
R
V
10
10
10
10A
150 C
T
A
=
123V
µ
4
-3
-2
-1
0
2
1
10
C85
C25
Differential forward resistance
r
f =
f
(
I
F)
f
= 10 kHz
10
EHD07104BAT 68...
r
Ι
f
-1 0
10
1
10 mA
Ω
10
2
F
0
10
1
10
2
10
3
10
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
0
0
EHD07103BAT 68...
C
T
R
V
234
0.5
pF
1.0
1V
Semiconductor Group 4 1998-11-01
BAT 68-07W
Semiconductor Group Sep-09-19985
Rectifier voltage
V
out =
f
(
V
in)
f
= 900 MHz
R
L = parameter in kΩ
10 0 10 1 10 2 10 3
mV
V
I
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
mV
V
O
1000
500
200
100
50
20
R
L=10
Testcircuit:D.U.T
R
IN
R
L
C
L
1nF50Ω
V
I
V
0
Semiconductor Group 5 1998-11-01
