DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES Low Reverse Recovery Loss diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink (terminal to base). CIRCUIT DIAGRAM C(K) C(K) E(A) E(A) ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit Repetitive Peak Reverse Voltage AC peak Forward Current 1ms Junction Temperature Storage Temperature Terminals-base Isolation Test Voltage Terminal 1-Terminal 2 Screw Torque Terminals (M8) Mounting (M6) VRRM IMFpeak IFpulse Tj Tstg VISO VISO T-T - V MDM1200H45E2-H 4,500 1,200 2,400 -40 +125 -40 +125 (1) 8,400 (AC 1 minute) 8,400 (AC 1 minute) 10 (2) 6 (3) A VRMS N*m Notes: (1) Terminal temperature shall not exceed the specified temperature in any operation. (2) Recommended Value 91N*m (3) Recommended Value 5.50.5N*m IMFpeak=1200A IMF(RMS)<450A ELECTRICAL CHARECTERISTICS Item Symbol Unit Repetitive Reverse Current Forward Voltage Drop Reverse Recovery Time Reverse Recovery Loss IRRM VF trr Err(10%) mA V s J/P PACKAGE CHARECTERISTICS Item Symbol Unit Min. Typ. Max. TBD - 2.0 4.2 0.9 2.7 25 4.7 1.8 4.0 Min. Typ. Max. Terminal Resistance Terminal Stray Inductance Thermal Impedance Comparative tracking index RCE LsCE Rth(j-c) CTI m nH K/W - 0.3 42 600 Contact Thermal Impedance Rth(c-f) K/W - 0.007 Test Conditions VAK=4,500V, Tj=125 IF=1,200A, Tj=125 VCC=2,600V, IF=1,200A, Ls=180nH o Tj=125 C Rg=3.3 (4) Test Conditions per arm per arm 0.017 Junction to case (per arm) - Case to fin (grease=1W/(mK), Heat-sink flatness 50um) Notes:(4) Counter arm; MBN1200H45E2-H VGE=+/-15V RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H Ls Preliminary Specification DUT LLOAD Vcc Rg G/D MBN1200H45E2-H Fig.1 Switching test circuit Ic Vce Ls= VL VL dIc ( d )t=t t 0 tL Fig.2 Definition of stray inductance Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t trr IF -Ic t3 t1 t2 t4 t2 Err(10%)= IFVce dt t1 t4 Err(Full)= IFVce dt t3 Fig.3 Definition of switching loss http://store.iiic.cc/ P2 L DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H Preliminary Specification STATIC CHARACTERISTICS TYPICAL 2000 1800 1600 Tj=25 Tj=125 Forward Current IF (A) 1400 1200 1000 800 600 400 200 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage VF (V) Forward Voltage of diode DYNAMIC CHARACTERISTICS TYPICAL TYPICAL 4.0 1.2 Vcc=2600V L=180nH Tj=125 counter arm; MBN1200H45E2-H VGE=+/-15V RG=3.3 Vcc=2600V L=180nH Tj=125 counter arm; MBN1200H45E2-H VGE=+/-15V RG=3.3 1.0 Reverse Recovery Time trr (us) 3.0 Reverse Recovery Loss Err (J) Err(full) Err(10%) 2.0 0.8 0.6 0.4 1.0 0.2 0.0 0.0 0 200 400 600 800 1000 1200 1400 0 Forward Current IF (A) 200 400 600 800 1000 1200 Forward Current IF (A) Recovery Time vs. Forward Current Recovery Loss vs. Forward Current http://store.iiic.cc/ P3 1400 DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H Preliminary Specification TRANSIENT THERMAL IMPEDANCE Maximum Transient thermal impedance : Zth(j-c) (K/W) 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Time : t(s) 1 Transient Thermal Impedance Curve http://store.iiic.cc/ P4 10 DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P5 Preliminary Specification OUTLINE DRAWING 48.5 Unit in mm Weight: 1050(g) Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder http://store.iiic.cc/ DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P6 Preliminary Specification HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8. 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