STD5NE10 (R) N - CHANNEL 100V - 0.32 - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 VDSS R DS(on) ID 100 V < 0.4 5A TYPICAL RDS(on) = 0.32 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 3 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. IPAK TO-251 (Suffix "-1") 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS Parameter Value Unit Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 k) 100 V 20 V 5 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o I DM (*) P tot dv/dt(1 ) T st g Tj Drain Current (continuous) at T c = 100 C 3.5 A Drain Current (pulsed) 20 A Total Dissipation at T c = 25 o C 25 W Derating Factor 0.17 W/ o C Peak Diode Recovery voltage slope 0.6 V/ns Storage Temperature Max. Operating Junction Temperature (*) Pulse width limited by safe operating area May 1999 -65 to 175 o C 175 o C (1) ISD 5A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX 1/9 STD5NE10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 6 100 1.5 275 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 30V) Max Value Unit 5 A 25 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 100 Unit V T c = 125 o C V GS = 20 V 1 10 A A 100 nA Max. Unit ON () Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 A R DS(on) Static Drain-source On Resistance I D = 2.5 A I D(on) V GS = 10V Min. 2 On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 3 4 V 0.32 0.4 5 A DYNAMIC Symbol g fs () C iss C oss C rss 2/9 Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance V DS > I D(on) x R DS(on)max I D = 2.5 A 2.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 305 45 21 pF pF pF f = 1 MHz STD5NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time V DD = 50 V I D = 3.5 A R G = 4.7 V GS = 10 V (Resistive Load, see fig. 3) 6.5 15 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V I D = 5 A V GS = 10 V 14 6 4 18 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. t d(of f) tf Turn-off Delay Time Fall Time V DD = 50 V I D = 3.5 A R G = 4.7 V GS = 10 V (Resistive Load, see fig. 3) 25 7 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 80 V ID = 7 A R G = 4.7 V GS = 10 V (Inductive Load, see fig. 5) 7 8 16 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (*) Source-drain Current Source-drain Current (pulsed) V SD () Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A di/dt = 100 A/s V DD = 50 V T j = 150 o C (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 5 20 A A 1.5 V 75 ns 210 nC 5.5 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for Thermal Impedance 3/9 STD5NE10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD5NE10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD5NE10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD5NE10 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD5NE10 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 8/9 STD5NE10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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