(7 SGS-THOMSON MJ4030/1/2 IF ieRoetecrRomes MJ4033/4/5 GENERAL PURPOSE DESCRIPTION The MJ4030/31/32/33/34/35 are medium-power si- licon NPN Darlington in Jedec TO-3 metal case, in- tended for use in general purpose and amplifier ap- plications. The complementary PNP types are the MJ4033/34/35 respectively. TO-3 INTERNAL SCHEMATIC DIAGRAMS PNP ABSOLUTE MAXIMUM RATINGS Vaiue Symbol Parameter PNP* | MJ4030 | MJ4031 | M4032 | Unit NPN | MJ4033 | MJ4034 | MJ4035 Vcso Collector-base Voltage (Ie = 0) 60 80 100 Vv VcEo Collector-emitter Voltage (Ig = 0) 60 80 100 Vv VeBo Emitter-base Voltage (Ic = 0) 5 Vv lc Collector Current 16 A lp Base Current 0.5 A Prot Total Power Dissipation at Tease < 25C 150 WwW Tstg Storage Temperature ~ 65 to 200 C Tj Junction Temperature 200 C * For PNP types voltage and current values are negative. December 1988 1/2 821MJ4030/31/32/33/34/35 THERMAL DATA | Rith j-case | Thermal Resistance Junction-case Max L 1.47 C/W | ELECTRICAL CHARACTERISTICS (T.ase = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit \cEO Collector Cutoff Current Voce =30V lp =O (Ip =0) MJ4030/33 3 mA Vee = 40V lp =0 MJ4031/34 3 mA Voce = 50V Ig =0 MJ4032/35 3 mA lepo Emitter Cutoff Current (lc =0) | Vea =5V Ic =0 5 mA lcer Collector Cutoff Current for MJ4030/33 Vcp = 60V 1 mA (Ree = 1KQ) for MJ4031/34 Vcp = 80V 1 mA for MJ4032/35 Voce = 100V 1 mA Tease = 150C for MJ4030/33 Vcp =60V 5 mA for MJ4031/34 Vcp =80V 5 mA for MJ4032/35 Voce = 100V 5 mA Verwec*} Collector-emitter Breakdown lo = 100mMA lp =0 Voltage for MJ4030/33 60 v for MJ4031/34 80 Vv for MJ4032/35 100 Vv Veeisat) | Collector-emitter Saturation Ic = 10A {gp = 40mA 25 Vv Voltage Ic = 16A Ip = 80mMA 4 v Vee* Base-emitter Voltage Ie =10A Vee =3V 3 Vv hre* Dc Current Gain Ic = 10A Voce =3V 1000 * Pulsed : pulse duration = 300us, duty cycles < 2%. For PNP types voltage and current values are negative. 2fe [57 SGS-THOMSON YF inicrorecrRomes 822