© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise specified) Min. Typ. Max.
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 300 μA
TJ = 125°C 5 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 60A, VGE = 15V, Note 1 1.50 1.80 V
TJ = 125°C 1.75 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Limited by Leads) 75 A
IC110 TC= 110°C40A
IF110 TC= 110°C36A
ICM TC= 25°C, 1ms 360 A
IATC = 25°C20A
EAS TC= 25°C 220 mJ
SSOA VGE = 15V, TVJ = 125°C, RG = 3ΩICM = 240 A
(RBSOA) Clamped Inductive Load VCE ≤ 600 V
PCTC= 25°C 200 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1Minute 2500 V~
IISOL < 1mA t = 20 Seconds 3000 V~
FCMounting Force 20..120/4.5..27 N/lb
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C
Weight 5 g
DS99874A(02/09)
VCES = 600V
IC110 = 40A
VCE(sat) ≤≤
≤≤
≤£ 1.80V
tfi(typ) = 90ns
IXGR72N60B3D1
ISOPLUS 247TM
ISOLATED TAB
G = Gate C = Collector
E = Emitter
GCE
GenX3TM B3-Class
IGBT w/Diode
(Electrically Isolated Back Surface)
Medium Speed Low Vsat PT IGBTs
for 5-40 kHz Switching
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
zAvalanche Rated
zAnti-Parallel Ultra Fast Diode
z2500V Electrical Isolation
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60B3D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC= 60A, VCE = 10V, Note 1 50 83 S
Cies 6800 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 575 pF
Cres 80 pF
Qg 225 nC
Qge IC= 60A, VGE = 15V, VCE = 0.5 • VCES 40 nC
Qgc 82 nC
td(on) 31 ns
tri 33 ns
Eon 1.38 mJ
td(off) 150 330 ns
tfi 90 160 ns
Eoff 1.05 2.20 mJ
td(on) 29 ns
tri 34 ns
Eon 2.70 mJ
td(off) 228 ns
tfi 142 ns
Eoff 2.20 mJ
RthJC 0.62 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 25°°
°°
°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 2.1 V
TJ = 150°C 1.4 V
IRM TJ = 100°C 8.3 A
trr 35 ns
RthJC 0.85 °C/W
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ISOPLUS247 (IXGR) Outline
Inductive load, TJ = 125°°
°°
°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
IF = 60A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V
IF = 1A, -di/dt = 200A/μs, VR = 30V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All Rights Reserved
IXGR72N60B3D1
Fi g . 1. Outp u t C h ar acter i sti cs
@ 25º C
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
330
012345678
V
CE
- Volts
I
C -
Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of VCE(sat) on
Junction T emperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 120A
I
C
= 60A
I
C
= 30A
Fi g . 5. Co l l ect or -to -Emitter Vo l tag e
vs. Gate-to -Emitter Vo ltag e
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 120A
60A
30A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GE
- Volts
I
C -
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60B3D1
Fi g . 11. Maximum T r an si ent Thermal Impedan ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 60A
I
G
= 10mA
Fi g . 10. R ever se-B i as Safe Op er ati n g Ar ea
0
40
80
120
160
200
240
280
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3
dV / dt < 10V / ns
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
IXYS REF: G_72N60B3(76)02-10-09-D
© 2009 IXYS CORPORATION, All Rights Reserved
IXGR72N60B3D1
Fig. 12. Inductive Switching
Ener gy L oss vs. Ga te Resi sta n ce
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V I
C
= 50A
I
C
=100A
I
C
= 25A
Fig. 15. Inductive Turn-off
Switc h in g Times vs. Gate R esi stan ce
80
100
120
140
160
180
200
220
240
0 5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
t
f
- Nanoseconds
100
250
400
550
700
850
1000
1150
1300
t
d(off)
- Nanoseconds
t
f
td(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 25A
I
C
= 100A
I
C
= 25A, 50A, 100A
Fig. 13. Inductive Switching
Energ y L oss vs. C o ll ector C ur r en t
0
1
2
3
4
5
6
7
20 30 40 50 60 70 80 90 100
IC - Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction T em perature
0
1
2
3
4
5
6
7
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
70
90
110
130
150
170
190
210
230
20 30 40 50 60 70 80 90 100
IC - Amperes
t
f
- Nanoseconds
130
145
160
175
190
205
220
235
250
t
d(off)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive T urn-off
Switching T imes vs. Junction T emperature
60
80
100
120
140
160
180
200
220
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
140
155
170
185
200
215
230
245
260
t
d(off)
- Nanoseconds
t
r
td(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A, 50A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60B3D1
Fig. 18. Inductive Turn-on
Swit ch i n g Times vs. Gat e R esi stan c e
10
30
50
70
90
110
130
150
170
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
20
35
50
65
80
95
110
125
140
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 25A
I
C
= 50A
Fig. 19. Inductive Turn-on
Switchi n g Times vs. Co l l ect o r C u rr en t
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r
- Nanoseconds
26
27
28
29
30
31
32
33
34
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
25ºC < T
J
< 125ºC
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Swit ch i n g Times vs. Jun cti o n Temp e r atu r e
0
10
20
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
25
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r
t
d(on
)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
IXYS REF: G_72N60B3(76)02-10-09-D
© 2009 IXYS CORPORATION, All Rights Reserved
IXGR72N60B3D1
IXYS REF: G_72N60B3(76)02-10-09-D
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
A/μs
μs
DSEP 2x61-06A
ZthJC
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
TVJ= 150°C
100°C
25°C
IF= 120A, 60A, 30A
IRM
QRM
IF= 30A, 60A, 120A
TVJ= 100°C
VR = 300V
trr
VFR
IF= 120A, 60A, 30A
TVJ= 100°C
IF = 60A
Fig. 21. Forward Current IF Versus VFFig. 23. Peak ReverseCurrent IRM
Versus -diF/dt
Fig. 22. Reverse Recorvery Charge Qr
Versus -diF/dt
Fig. 26. Peak Forward Voltage VRM
and trr Versus -diF/dt
Fig. 25. Recorvery Time trr Versus
-diF/dt
Fig. 24. Dynamic Paraments Qr, IRM
Versus TvJ
Fig. 27. Maximum transient thermal impedance (for diode)
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width [ s ]
Z
(th)JC
[ ºC / W ]
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)
