BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability * * * * Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 3) Part Number BSS138-7-F BSS138Q-7-F Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS138 Document number: DS30144 Rev. 17 - 2 2000 L C38 2001 M Mar 3 2002 N Apr 4 K = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM K38 YM Marking Information 2003 P May 5 2004 R ... ... Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D March 2012 (c) Diodes Incorporated BSS138 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20K Gate-Source Voltage Continuous Gate-Source Voltage Non repetitive, Pulse width<50s Drain Current Continuous Pulsed Drain Current (10s pulse duty cycle = 1%) Symbol VDSS VDGR ID IDM Value 50 50 20 40 200 1 Units V V V V mA A Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Units mW C/W C VGSS Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz Ciss Coss Crss 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 4. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 0.6 Tj = 25C ID, DRAIN-SOURCE CURRENT (A) Min 0.8 VGS = 3.5V 0.5 ID, DRAIN-SOURCE CURRENT (A) Notes: Symbol VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 BSS138 Document number: DS30144 Rev. 17 - 2 2 of 5 www.diodes.com 0.7 VDS = 1V -55 C 25C 0.6 0.5 150C 0.4 0.3 0.2 0.1 0 0 0.5 1 2.5 1.5 2 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4 4.5 March 2012 (c) Diodes Incorporated 2.45 2 2.25 1.8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () BSS138 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 0.65 -55 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -5 45 145 95 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature 150C VGS = 2.5V 7 6 5 25C 4 3 -55C 2 1 0 6 VGS = 4.5V 5 150C 4 3 2 25C 1 -55C 0 0.1 BSS138 Document number: DS30144 Rev. 17 - 2 VGS = 2.75V 7 150C 6 5 4 25C 3 2 -55C 1 0 0.1 0.15 0.25 0.2 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0 8 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current 0 9 3 of 5 www.diodes.com 0.05 3.5 VGS = 10V 3 150C 2.5 2 1.5 25 C 1 -55C 0.5 0 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current 0 March 2012 (c) Diodes Incorporated BSS138 1 100 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 0.1 150C -55C 0.01 25C CiSS 10 COSS CrSS 1 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage Package Outline Dimensions A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C X BSS138 Document number: DS30144 Rev. 17 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS138 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com BSS138 Document number: DS30144 Rev. 17 - 2 5 of 5 www.diodes.com March 2012 (c) Diodes Incorporated