Mar. 2002
(15.0° ± 0.5°)
24-φ4.5+0.2
0
φ187 ± 0.3
0.4MAX
φ3.6 ± 0.2
2.3 ± 0.2DEPTH
26 ± 0.5
φ130 ± 0.2
φ200 ± 0.5
(6.7)
φ3.6 ± 0.2 2.3 ± 0.2DEPTH
φ130 ± 0.2
φ175MAX
(φ177.5)
0.4MAX
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC6000AX-120DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
FGC6000AX-120DS OUTLINE DRAWING Dimensions in mm
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
V
DM
= 5500V, V
D
= 3000V, C
C
= 6µF, L
C
= 0.4µH, V
RG
= 20V
d
iGQ
/d
t
= 10000A/µs, Tj = 25/125°C
(see Fig. 1, 2)
Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, Tf = 72°C
One half cycle at 60Hz, Tj = 125°C
IT = 6000A, VD = 3000V, IGM= 300A, Tj= 25/125°C
diG/dt = 200A/µs (see Fig. 1, 2)
(Recommended value 108kN)
Typical value
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
di/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg—
—
22
22
6000
6000
3200
V
V
V
V
V
A
A
A
kA
A2s
A/µs
V
V
A
A
kW
kW
W
W
°C
°C
kN
g
6000
3100
2000
50
10.4 × 106
1000
10
22
1500
6000
15
180
300
900
–40 ~ +125
–40 ~ +150
98 ~ 118
3700
Repetitive controllable
on-state current
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of
on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Symbol Parameter Conditions Ratings Unit
VRRM
VRSM
VDRM
VDSM
VLTDS
Unit
Symbol Parameter Voltage class
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MAXIMUM RATINGS
●Asymmetrical GCT
●ITQRM
Repetitive controllable on-state current
.......... 6000A
●IT(AV) Average on-state current.................... 2000A
●VDRM
Repetitive peak off-state voltage
.................. 6000V
●VRRM
Repetitive peak reverse voltage
....................... 22V
Conditions
—
—
VGK = –2V
VGK = –2V
VGK = –2V, λ = 100 Fit
Mar. 2002
td ; 0V
RG
~ 0.9V
D
t
gt
; 0V
RG
~ 0.1V
D
t
s
; 0V
RG
~ 0.9I
T
di
G
/d
t
; 0.1I
GM
~ 0.9I
GM
tw
; 0V
RG
~ 0.9I
GM
di
GQ
/d
t
; 0.1I
RG
~ 0.9I
RG
V
D
tgt
td
V
RG
I
GM
ts
V
RG
I
T
V
D
di
GQ
/dt
di
G
/dt
I
GQ
I
G
tw
Rc
L(load) FWDi
DUT CDi
Cc
V
D
Lc
ANL
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
EON
ts
EOFF
IGT
VGT
Rth(j-f)
V
mA
mA
mA
V/
µ
s
µ
s
µ
s
J/P
µ
s
J/P
A
V
K/W
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of
off-state voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Gate trigger current
Gate trigger voltage
Thermal resistance
IT = 2800A, VD =3000V, di/dt = 1000A/µs,
IGM = 300A, diG/dt = 200A/µs, Tj = 125°C (see Fig. 1,2)
IT = 6000A, VD =3000V, diGQ/dt = 10000A/µs,
Tj = 125°C, LC = 0.3µH, VRG = 20V (see Fig. 1,2)
I
T
= 2800A, V
DM
=4300V, V
D
=3000V, T
j
= 125°C, C
C
= 6µF
L
C
= 0.4µH, V
RG
= 20V, d
iGQ
/d
t
= 10000A/µs
(see Fig. 1,2)
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
4
100
150
100
—
3
1
1.5
3.0
20
8.0
1.5
0.0044
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3000
—
—
—
—
—
—
—
—
IT = 6000A, Tj = 125°C
VRM = 22V, Tj = 125°C
VDM = 6000V, VGK = –2V, Tj = 125°C
VRG = 22V, Tj = 125°C
VD = 3000V, VGK = –2V, Tj = 125°C
(Expo.wave)
VD = 3000V, IT = 6000A, IGM = 300A, Tj = 125°C
di/dt = 1000A/µs, diG/dt = 200A/µs (see Fig. 1,2)
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC6000AX-120DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits
Min Typ Max Unit
Fig. 1 Turn-on and Turn-off waveform
Fig. 2 Turn-on and Turn-off test circuit
(With clamp circuit)
Mar. 2002
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC6000AX-120DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
ON-STATE CURRENT IT (A)
ON-STATE VOLTAGE VTM (V)
TURN ON SWITCHING ENERGY EON (J/P)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
Zth (K/W)
TIME (S)
10
2
10
3
2
3
5
7
10
4
2
3
5
7
0 1.0 0 1000 3000 4000 60005000 700020002.0 3.0 4.0 5.0 6.0
T
j
= 125°CT
j
= 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.001
0.002
0.003
0.004
0.005
0.006
10
–3
210
–2
357
10
0
210
1
357
210
–1
357 2 10
0
357
TURN ON CURRENT IT (A)
Eon VS IT
00
50
40
30
20
10
1000 3000 50002000 4000 6000 7000
TURN OFF SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT IT (A)
Eoff VS IT
Condition
V
D
= 3000V, V
DM
= V
D
0.416
✕
I
T
T
j
= 125°C, d
iGQ
/d
t
= 10000A/µs
C
C
= 6µF, L
C
= 0.4µH
Condition
V
D
= 3000V, T
j
= 125°C
d
i
/d
t
= 1000A/µs
I
GM
= 300A
d
iG
/d
t
= 200A/µs
