TYPES TIP509 THRU TIP5S12 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS @ 120 V and 150 V Min ViBR)CEO e 4-A Rated Continuous Collector Current 30 Watts at 100C Case Temperature Min fy of 70MHzat5V,05A mechanical data 71p508 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDEC TO-3 DIMENSIONS AND NOTES ARE APPLICABLE 1.573 MAX Laer | . aso bes MIN = oars 17 0.525 R MAX 4 oso 7 begs 2 LEADS i, 0.655 038 2 EMITTER 1,050 MAX z | "9.225 +}, ae 0.205 oad < 2.181 ora Or R na 0470 | 2 HOLES BOTH ENDS 0.1395 max Learme PLANE 1 BASE CASE TEMPERATURE MEASUREMENT POINT ALL DIMENSIONS ARE IN INCHES Tipeig ALL TERMINALS ARE ELECTRICALLY INSULATED FROM THE CASE arse ae 37 ow ons FROM STUD 78 43s 1 EMITTER 243s e170 oan aX, 2 ease seating ome 3 courcton PLANE > om os 0465 ALL DIMENSIONS ARE IN INCHES ALL JEDEC TO-6? DIMENSIONS cia AND NOTES ARE APPLICABLE CASE TEMPERATURE MEASURE- MENT POINT IS UNDERSIDE OF FLAT SJAFACE WITHIN 0.125 absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage Coilector-Emitter Vottage (See Note y Emitter-Base Voltage . Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current Continuous Device Dissipation at (or below} 100 C Case Temperature. (See Note 3} Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range oe Terminal Temperature 1/16 Inch from Case for 10 Seconds NOTES: 1. These values apply when the base-emitter diode is open-circuited. 2. This value applies for ty, < 0.3 ms, duty cycle < 10%. 3. Derate linearly to 200C case temperature at the rate of 0.3 W/'C, 4 . Derate linearly to 200C free-air temperature at the rate of 22.8 mW/C. TIPS509 TIP510 TIP511- TIPS72 130 V 160 V 120 V 150 V 6V 6V wa 4A-e a 8A a2 A WW a 4We 65C to 200C 65C to 200C + 300C TEXAS INSTRUMENTS 2-241TYPES TIP509 THRU TIP512 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted} TIPSO9 TIP510 PARAMETER TEST CONDITIONS TIPS11 TIP512 {UNIT MIN MAX|MIN MAX VIBR)CEO Collector-Emitter Breakdown Voltage I=30mA, !p=0, See Note 5 120 150 Vv IcEO Collector Cutoff Current Vce = 60V. ip 0 06 mA Vce=75V, Ip=o 0.5 Voce = 120V, Vee =0 1 IcES Collector Cutoff Current a _ we = > Ton TE ; 1 mA VcE=75V, Vpe=9, Tc = 150C 1 leBo Emitter Cutoff Current Veg=3V. lc 0 50 50 BA Vep=6V, ic=0 500 500 hee Static Forward Current Transfer Ratio Voces 4V.Ic=2A, See Notes B and 6] 40 200 | 40200 Vce=4V, Ic=4A, See Notes5and6] 25 25 VBE Base-E mitter Voltage Vce=4V, Ic=4A, See Notes 5 and 6 1.4 14; V VcE(sat) _ Collector-Emitter Saturation Voltage IBFO2A, Io= 2A, See Notes 6 and 6 os 06 Vv (gp =0.4A, IG =4A, See Notes 5 and 6 1.5 1.5 hte Smali-Signal Common Emitter VcE=5V, Ig=05A, f= 1kHe 40 40 Forward Current Transfer Ratio hfe Small-Signal Common-Emitter Voce =5V, IG=O0.5A, f= 10MHz 7 7 Forward Current Transfer Ratio NOTES: 5. These parameters musi be measured using pulse techniques. ty, = 300 us, duty cycle < 2%. 6. These parameters ara measured with voltage-sensing contacts separate from the current-carrying contacts and focated within 0.125 inch from the device body. thermal characteristics PARAMETER . MAX | UNIT Resc Junction-to-Case Thermal Resistance 3.33 oN Rea Junction-to-Free-Air Thermal Resistance 43,75 2-242 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.