New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
Document Number: 88888
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
IF(AV) 3 A
VRRM 50 V to 800 V
IFSM 80 A
IR5 µA
VF1.05 V
TJ max. 150 °C
Case Style KBPM
+~~−
+
~
~
−
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 V
Maximum average forward output rectified current
at TA = 55 °C (Fig. 1) IF(AV) 3.0 A
Peak forward surge current 50 Hz single half
sine-wave superimposed on rated load IFSM 80 A
Rating for fusing (t < 10 ms) I2t 32 A2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88888
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL 3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M UNIT
Maximum instantaneous forward
voltage drop per diode 3.0 A VF 1.05 V
Maximum DC reverse current
at rated DC blocking voltage
per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction capacitance
per diode 4.0 V, 1 MHz CJ25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M UNIT
Typical thermal resistance (1) RθJA
RθJL
30
11 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
3KBP06M-E4/45 1.912 45 30 Tube
3KBP06M-E4/51 1.912 51 600 Anti-static PVC tray
Figure 1. Forward Current Derating Curve
020 40 60 80100 120 140 160
0
1
2
3
4
60 Hz
Resistive or
Inductive Load
With Heat Sink
Without Heat Sink
Heat Sink Mounting:
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) Al. Plate
Ambient Temperature (°C)
Average Forward Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
Document Number: 88888
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.5
0.4 0.6 0.8 1.0 1.2
1.1
0.01
0.1
1
10
0.7 0.9
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Volta
g
e (V)
Instantaneous Forward Current (A)
10 20 40 60 80100
0.01
0.1
1
10
100
30 50 70 90
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028(0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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