3875081 GE SOLID 75081. 7 state 0% Def 3a7sos1 o012217 7 Fite Number 978 High-Voltage Silicon N-P-N Transistors Bo 33-1 High-Voltage Power Transistors TIP 47, TIP48, TIP49, TIP50 For High-Speed Switching and Linear-Amplifier Applications Features: @ VERSAWATT package @ Maximum safe-area-of-operation curves The RCA-TIP47, TIP48, TIP49, and TIP50 are silicon n-p-n transistors. Typical applications for these transistors TERMINAL DESIGNATIONS c _ include high-voltage switches, switching regulators, TV (FLANGE) C C - horizontal-deflection circuits, power supplies, and TV ~ audio-output circuits. They are supplied in the JEDEC TO- [+ 220AB (VERSAWATT) plastic package. TOP VIEW 8 9205-39969 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values: TiP47 TiP4s TIP49 350 400 450 V 250 300 350 Vv 5 5 5 Vv 1 1 1 A 2 2 2 A 0.6 0.6 0.6 A To UP t0 25C. cece cece e eee c even 40 40 40 Ww Te above 25C ......6.. Derate linearly 0.32 W/C Ta up to 25C... eee eee eee 1.8 Ww ' Tata. Ta cece cece cece cet ee cence neeeneneanes -65 to 150 C Tu At distance = 1/8 in. (3.17 mm) from seating plane for 10s max. ...... 235 C 219 0759 E-123875081 GE SOLID STATE O1 DEQ} 387sos1 oo1vela 4s ff) 7-3BR-)). High-Voltage Power Transistors TIP47, TIP48, TIP49, TIP50 ELECTRICAL CHARACTERISTICS, At Case Temperature (T) = 25C unless otherwise specified TEST COND. LIMITS VOLT-] CUR- CHARACTERISTIC| AGE | RENT] = TIP47 TIP48 TIP49 TIP5SO UNITS Vde | Adc VCE Ic | Min. | Max. | Min. | Max.| Min.) Max. | Min. | Max. IcEO 150 - 1 - - - - - - ip =0 200 - = - 1 _ _ - _ 250 ~je-fo-yof-}4f}-] -[ 300 -~{|-/-]-]-]-}]- 1 360 ~-fr{/-]7,-}|-j) -|-|- IcES 400 - _ _ 1 _ _ - mA Vep=0 450 ~}-y-]-}-y 1] - 4] - 500 ~{/-]J-f|-]-[-]- 1 \ Mee 6 of{-|{rf-]71}-b1)]-] 1] m h 10 vw |i0 | }10] | wf} - ] ww] - FE 10 | 0.328} 30 | 1501 30 | 150} 30 | 150 | 30 | 150 veer 0.034 |250b | |s00b| |ssob| - Jacob! - | v VBE 10 a |- fis{- | is] - | 18] - | 15] Vv Vecelsath ies OA we J-}at-}al-}at-fa4fy {hel 10 | 02 - - - - f= 1MHe 10 10 40 10 ay f=1MHz i0 | o2 |10 | - | 10 | - | 10] - | 10 | | Mie Nie _ 10 | 02 | 25 2 | |25] | 25] - f=1kHz Sib woo | - fos} - foa| loa] - oa} -] aA t=0.5s TON (td + tr}&d 0 0 1 2 (typ. 2 (typ. 2 (typ. . , Vec = 200 V we ) (tye a) (ye } | 0.2 vp } c,d t T T T Sog = 200 V 1 | 2tye) | 2tye) | 2ttyp) | 2ttye) | xs J j 1 | tg Vcc = 200 V 1 | o5(typ) | O5typ.) | 0.5 (typ) | 0.5 ityp.) Rasc [312] | 312] - | 342] - | 3.12 C/W Raa ~ | 7} - | 70) - | 70 | - | 70 @ Pulsed, pulse duration = 300 ys, duty factor < 2%.. b CAUTION: Sustaining voltage, VcEotsus), MUST NOT be measured on a curve tracer. See Fig. 8. d lpi =lp2=0.1A. 220 _- 0760 E-133875081 GE SOLID STATE JUL DE 3875041 O0147219 a High-Voltage Power Transistors o76L TIP47, TIP48, TIP49, TIP50 8) CASE TEMPERATURE (Tc }= 25C (CURVES MUST SE OERATED LINEARLY WITH INCREASE IN TEMPERATURE) PULSED Vogg (MAX.1+ 250 V (TIP47} VCE (MAX)=300V (TIP48) VcEo (MAX }#350 V (TIPS9) Vceo (MAX.1#400 V (TIP io (oo 00 COLLECTOR-TO-EMITTER VOLTAGE (Vp lV 92cS-28656RI Fig.1 Maximum operating areas for all types. 5) cASE TEMPERATURE (Tc) 286% t -TO-EMITTER SATURATION VOLTAGE o " MAXIMUM TRANSISTOR DISSIPATION (P7}W > ' 1 a of | 5 1 iy e 2 2 wt o "| I & t Hi =e Hi | 4 8 | Hi ' 1 | 9 180 ws 2 a6 @ 6 w 100 1000 128 RATURE (To}*C CASE TEMPERATURE (To) COLLECTOR CURRENT {Ip }mA gzcs2ana 92CS- 26659 Fig.2 Derating curve for all types. Fig. 3 Typical saturation-voltage characteristics for aif types. TRANSFER i 4 CUARENT (Iga oat COLLECTOR CURRENT (Lel- ' etca-s3788 9208-34005 Fig.4 Typical de beta characteristics Fig.6 Typical gain-bandwidth characteristics for all types. for all types. 221 E-14 T-337/!3875081 GE SOLID STATE 92 DEQ) 3875041 0017220 ? I iT33-1! High-Voltage Power Transistors TIP47, TIP48, TIP49, TIP50 T] COLLECTOR-TO-EMITTER VOLTAGE (Vp) +10 : CASE TEMPERATURE (T)=25C > Los i vl = | e ft So $ oc oi 04 - 44 Zz \ 6 | i ee wy o2-| - % 2 I ie 1 i | 1 . 8 4 8 i000 COLLECTOR CURRENT (Ic) mA 9209-26658 Fig.6 Typical base-to-emitter voltage vs. eallectar current. Voc INPUT FROM HP-214A Vocr200 Vv PULSE GENERATOR (Zg = 50 OHMS) RL OUTPUT TO OSCILLOSCOPE DEVICE UNDER TEST Ie," Tee -VBB INPUT PULSE DURATION = 20 us REP, RATE = 1000 Hz Fig. 7 Circuit used to measure saturated switching times. 9205-26660 +: 4 5 781 au | : TIME as } | 3 Tao | { | INPUT WAVE FORM - | a | | I | I | | { | { | | |-90% te Il Ba | aE | 38 10% TIME _ tafe = tr ts > TURN-ON TURN-OFF Bae i TIME OUTPUT WAVE FORM 92CS-12874 Fig. 8 Phase relationship between input and output currents, showing reference points for specification of switching times. 222 0762 F-O1