JGD ES1A THrRu ES1J ad < i) F 1.0 AMP. SUPER FAST RECOVRY SILICON RECTIFIERS VOLTAGE RANGE 50 to 600 Volts FEATURES * For surface mount application * Extremely low thermal resistance * Easy pick and place x High temp soldering:250C for 10 seconds at terminals * Superfast recovery times for high efficiency MECHANICAL DATA Case: Molded plastic * Terminals: Solder plated * Polarity: Indicated by cathod band x Standard Packaging: 12mm tape per (EIA STD RS-481) * Weight:0.091 gram(SMA* ) .0.064 gram( (SMA) SMA/DO-214AC* [>| | aT ft yt b [pero BRP neh ct SMA/DO-214AC a c (yt ee te MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maxmum thermal resistance: 15C/W Junction to lead. Rating at 25C ambient temperature unless otherwise specified. TYPE NUMBER SYMBOLS; ESIA | ESIB | ESIC | ESI1D | ESIG | EStJ | UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 Vv Maximum RMS Voltage Vams 35 70 105 140 280 420 Vv Maximum DC Blocking Voltage Voc 50 100 50 200 | 400 | 600 Vv Maximum Average Forward Rectified Current T_ = 75C levav) 1.0 A Peak Forward Surge Current, 8.3 ms half sine lesm 30 A Ne alt Mei) Ve 0.95 1.35) 1.7] Vv Maximum D.C Reverse Current @ Ta = 25 \ 5 at Rated D.C. Blocking Voltage @ Ta = 100C R 100 uA Maximum Reverse Recovery Time( Note 2) Tr 35 nS Typical Junction Capacitance (Note 3) Cy 15 | 10 pF Operating and Storage Temperature Range Ty/ Tst -50 to +150 / -50 to +150 cc NOTES: 1. Pulse test: Pulse width 300 psec, Duty cycle 2% 2. Reverse Recovery Test Conditions: Ir = 0.5A. Ig =1.0A, Inn =0.25A 3. Measured at 1 MHz and applied reverse voltage of 4.0V DC. JINAN GUDE ELECTRONIC DEVICE Co., LTD.RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) Figure 1 Typical Forward Figure 2 Forward Current Derating Curve Characteristics 24 2.2 P.C.B mounted on 2.0 0.2 0.2"(5.0 x 5.0mm) 1.8 copper pad area 16 ot 412 1.0 Single Phase.Hal! Wave 60Hz Resistive or Inductive Load Oo yb Dm 25 50 75 100 125 150 c Average Forward Rectified CurreniAmperes versus Lead Temperaiure--C 4 6 8 1.0 1.2 1.4 Vols instanianeous Forward Curreni- Amperes versus Instantaneous Forward VoliageVolis Figure 3 Typical Junction Capacitance 200 100 0 40 20 pF A : A 1 4 10 20 40 100 6200 6400 1000 Junction Capacitance- pF versus Reverse Voliage V JINAN GUDE ELECTRONIC DEVICE CO., LTD.JGD OH RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) Figure 4 Maximum Non - repetitive Surge Current 30 2 SUGGESTED SOLDER PAD LAYOUT 20 h- 0.078" | 2 15 Ee < 10 0.058" I 0.070" /*- Cycles Peak Forward Surge CurrentAmperes versus Number of Cycles Ar 60HzCycles Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram 508) 100 +0.5A Trr | PULSE 0 7 Nee P(NOTE 2) | -0.25A 10 OSCILLOSCOPE (NOTE 1) NOTES: 1 Rise Time=7 ns max. Input Impedance= a -1.0A 1 megohm 22pF 2 Rise Time=t Ons max. Source Impedance= 50 ohms SET TIME BASE FOR 3 Resistors are non-inductive 50/200ns/icm JINAN GUDE ELECTRONIC DEVICE CoO., LTD.