LESHAN RADIO COMPANY, LTD.
MBT3904–1/12
1
3
2
Dual General Purpose Transistors
MAXIMUM RATINGS
Rating Symbol Voltage Unit
Collector–Emitter V oltage V CEO V
MBT3904DW1T1 (NPN) 40
MBT3906DW1T1 (PNP) –40
Collector–Base V oltage V CBO V
MBT3904DW1T1 (NPN) 60
MBT3906DW1T1 (PNP) –40
Emitter–Base V oltage V EBO V
MBT3904DW1T1 (NPN) 6.0
MBT3906DW1T1 (PNP) –5.0
Collector Current
-
Continuous I CmAdc
MBT3904DW1T1 (NPN) 200
MBT3906DW1T1 (PNP) –200
Electrostatic Discharge ESD HBM>16000, V
MM>2000
THERMAL CHARACTERISTICS
Characteristic Symbol Ma x Unit
Total Device Dissipation(1) P D150 mW
TA = 25°C
Thermal Resistance, R θJA 833 °C/W
Junction to Ambient
Junction and Storage T J , T stg –55 to +150 °C
Temperature
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
See Table
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1 MBT3906DW1T1
13
2
64
5
Q1
Q2
13
2
64
5
Q1
Q2
MBT3946DW1T1
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
• h FE, 100–300
• Low VCE(sat) , 3 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• A vailable in 8 mm, 7–inch/3,000 Unit Tape and Reel
13
2
64
5
Q1
Q2
*Q 1 same as MBT3906DW1T1
Q 2 same as MBT3904DW1T1
ORDERING INFORMATION
Device Package Shipping
MBT3904DW1T1 SOT–363 3000 Units/Reel
MBT3906DW1T1 SOT–363 3000 Units/Reel
MBT3946DW1T1 SOT–363 3000 Units/Reel
LESHAN RADIO COMPANY, LTD.
MBT3904–2/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Mi n Ma x Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2) V (BR)CEO Vdc
(I C = 1.0 mAdc, I B = 0) MBT3904DW1T1 (NPN) 40 —
(I C = –1.0 mAdc, I B = 0) MBT3906DW1T1 (PNP) –40 —
Collector–Base Breakdown V oltage V (BR)CBO Vdc
(I C = 10 µAdc, I E = 0) MBT3904DW1T1 (NPN) 60 —
(I C = –10 µAdc, I E = 0) MBT3906DW1T1 (PNP) –40 —
Emitter–Base Breakdown Voltage V (BR)EBO Vdc
(I E = 10 µAdc, I C = 0) MBT3904DW1T1 (NPN) 6.0 —
(I E = –10 µAdc, I C = 0) MBT3906DW1T1 (PNP) –5.0 —
Base Cutoff Current I BL nAdc
(V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
Collector Cutoff Current I CEX nAdc
(V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
ON CHARACTERISTICS (2)
DC Current Gain h FE Vdc
(I C = 0.1 mAdc, V CE = 1.0 Vdc) MBT3904DW1T1 (NPN) 40 —
(I C = 1.0 mAdc, V CE = 1.0 Vdc) 70 —
(I C = 10 mAdc, V CE = 1.0 Vdc) 100 —
(I C = 50 mAdc, V CE = 1.0 Vdc) 60 —
(I C = 100 mAdc, V CE = 1.0 Vdc) 30 —
(I C = –0.1 mAdc, V CE = –1.0 Vdc) MBT3906DW1T1 (PNP) 60 —
(I C = –1.0 mAdc, V CE = –1.0 Vdc) 80 —
(I C = –10 mAdc, V CE = –1.0 Vdc) 100 —
(I C = –50 mAdc, V CE = –1.0 Vdc) 60 —
(I C = –100 mAdc, V CE = –1.0 Vdc) 30 —
Collector–Emitter Saturation V oltage V CE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) — 0.2
(I C = 50 mAdc, I B = 5.0 mAdc) — 0.3
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) — – 0.25
(I C = –50 mAdc, I B = –5.0 mAdc) — –0.4
Base–Emitter Saturation Voltage V BE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) 0.65 0.85
(I C = 50 mAdc, I B = 5.0 mAdc) — 0.95
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) –0.65 –0.85
(I C = –50 mAdc, I B = –5.0 mAdc) — –0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(I C = 10 mAdc, V CE = 20 Vdc, MBT3904DW1T1 (NPN) 300 —
f = 100 MHz)
(I C = –10 mAdc, V CE = –20 Vdc, MBT3906DW1T1 (PNP) 250 —
f = 100 MHz)
Output Capacitance C obo pF
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 4.0
(V CB = –5.0 Vdc, I E = 0, MBT3906DW1T1 (PNP) — 4.5
f = 1.0 MHz)
Input Capacitance C ibo pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 8.0
(V
EB
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MBT3906DW1T1 (PNP) — 10.0
2. Pulse Test: Pulse Width
<
300 ms; Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
MBT3904–3/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
Input Impedance h ie k Ω
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 10
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 2.0 12
Voltage Feedback Ratio h re X 10 –4
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 0.5 8.0
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 0.1 10
Small–Signal Current Gain h fe —
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 100 400
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 100 400
Output Admittance h oe µmhos
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 40
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 3.0 60
Noise Figure NF dB
(V CE = 5.0 Vdc, I C = 100 µAdc, MBT3904DW1T1 (NPN) — 5.0
R S = 1.0 k W, f = 1.0 kHz)
(V CE = –5.0 Vdc, I C = –100 µAdc, MBT3906DW1T1 (PNP) — 4.0
R S = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay T ime (V CC = 3.0 Vdc, V BE = –0.5 Vdc) MBT3904DW1T1 (NPN) t d—35ns
(V CC = –3.0 Vdc, V BE = 0.5 Vdc) MBT3906DW1T1 (PNP) — 35
Rise T ime (I C = 10 mAdc, I B1 = 1.0 mAdc) MBT3904DW1T1 (NPN) t r—35ns
(I C = –10 mAdc, I B1 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 35
Storage T ime (V CC = 3.0 Vdc, I C = 10 mAdc) MBT3904DW1T1 (NPN) t s— 200 ns
(V CC = –3.0 Vdc, I C = –10 mAdc) MBT3906DW1T1 (PNP) — 22 5
Fall Time (I B1 = I B2 = 1.0 mAdc) MBT3904DW1T1 (NPN) t f —50ns
(I B1 = I B2 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 70
LESHAN RADIO COMPANY, LTD.
MBT3904–4/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
MBT3904DW1T1 (NPN)
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
DUTY CYCLE = 2%
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 125°C
* Total shunt capacitance of test jig and connectors
0.1 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40
10
7.0
5.0
3.0
2.0
1.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitancere
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
5000
3000
2000
1000
700
500
300
200
100
70
50
Q, CHARGE (pC)
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
LESHAN RADIO COMPANY, LTD.
MBT3904–5/12
MBT3904DW1T1 (NPN)
t `s , STORAGE TIME(ns) TIME(ns)
t r , RISE TIME (ns)
t f , FALL TIME (ns)
500
300
200
100
70
50
30
20
10
7
5
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise Time
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
I C , COLLECTOR CURRENT (mA)
Figure 8. Fall Time
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
NF, NOISE FIGURE (dB)
500
300
200
100
70
50
30
20
10
7
5
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
f,FREQUENCY (kHz)
Figure 9. Noise Figure R S , SOURCE RESISTANCE (kΩ)
Figure 10. Noise Figure
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
14
12
10
8
6
4
2
00.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
LESHAN RADIO COMPANY, LTD.
MBT3904–6/12
MBT3904DW1T1 (NPN)
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
h ie , INPUT IMPEDANCE (k OHMS) h fe , CURRENT GAIN
h oe , OUTPUT ADMITTANCE ( µmhos)
h re , VOLTAGE FEEDBACK RATIO (x 10–4)
300
200
100
70
50
30
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
100
50
20
10
5
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain I C , COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20
10
5.0
2.0
1.0
0.5
0.2
I C , COLLECTOR CURRENT (mA)
Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
LESHAN RADIO COMPANY, LTD.
MBT3904–7/12
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h FE , DC CURRENT GAIN (NORMALIZED)
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
MBT3904DW1T1 (NPN)
TYPICAL STATIC CHARACTERISTICS
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
0.8
0.6
0.4
0.2
0
h FE , DC CURRENT GAIN (NORMALIZED)
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
V, VOLTAGE (VOLTS)
θ V , TEMPERATURE COEFFICIENTS (mV/ °C)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.2
1.0
0.8
0.6
0.4
0.2
0
I C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
LESHAN RADIO COMPANY, LTD.
MBT3904–8/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
MBT3906DW1T1 (PNP)
Figure 19. Delay and Rise Time
Equivalent Test Circuit Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 125°C
* Total shunt capacitance of test jig and connectors
0.1 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40
10
7.0
5.0
3.0
2.0
1.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 21. Capacitancere
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
5000
3000
2000
1000
700
500
300
200
100
70
50
Q, CHARGE (pC)
I C , COLLECTOR CURRENT (mA)
Figure 22. Charge Data
I C , COLLECTOR CURRENT (mA)
Figure 23. Turn–On Time
TIME(ns)
t f , FALL TIME (ns)
I C , COLLECTOR CURRENT (mA)
Figure 24. Fall Time
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
LESHAN RADIO COMPANY, LTD.
MBT3904–9/12
5.0
4.0
3.0
2.0
1.0
0
NF, NOISE FIGURE (dB)
MBT3906DW1T1 (PNP)
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V = –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
NF, NOISE FIGURE (dB)
f,FREQUENCY (kHz)
Figure 25. Noise Figure R S , SOURCE RESISTANCE (kΩ)
Figure 26. Noise Figure
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
12
10
8
6
4
2
00.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
h ie , INPUT IMPEDANCE (k OHMS) h fe , CURRENT GAIN
h oe , OUTPUT ADMITTANCE ( µmhos)
h re , VOLTAGE FEEDBACK RATIO (x 10–4)
300
200
100
70
50
30
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
100
50
20
10
5
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
I C , COLLECTOR CURRENT (mA)
Figure 27. Current Gain I C , COLLECTOR CURRENT (mA)
Figure 28. Output Admittance
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20
10
5.0
2.0
1.0
0.5
0.2
I C , COLLECTOR CURRENT (mA)
Figure 29. Input Impedance I C , COLLECTOR CURRENT (mA)
Figure 30. Voltage Feedback Ratio
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
LESHAN RADIO COMPANY, LTD.
MBT3904–10/12
I C , COLLECTOR CURRENT (mA)
Figure 31. DC Current Gain
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h FE , DC CURRENT GAIN (NORMALIZED)
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
MBT3906DW1T1 (PNP)
TYPICAL STATIC CHARACTERISTICS
I B , BASE CURRENT (mA)
Figure 32. Collector Saturation Region
1.0
0.8
0.6
0.4
0.2
0
h FE , DC CURRENT GAIN (NORMALIZED)
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
V, VOLTAGE (VOLTS)
θ V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
1.0
0.8
0.6
0.4
0.2
0
I C , COLLECTOR CURRENT (mA)
Figure 33. “ON” Voltages I C , COLLECTOR CURRENT (mA)
Figure 34. Temperature Coefficients
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
