VS-30CPQ140-N3, VS-30CPQ150-N3
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Revision: 02-Jan-18 1Document Number: 96455
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High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 15 A
VR140 V, 150 V
VF at IF0.78 V
IRM max. 15 mA at 125 °C
TJ max. 175 °C
EAS 11.25 mJ
Package TO-247AC 3L
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC 3L
1
3
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 30 A
VRRM 150 V
IFSM tp = 5 μs sine 1000 A
VF15 Apk, TJ = 125 °C (per leg) 0.78 V
TJ-55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30CPQ140-N3 VS-30CPQ150-N3 UNITS
Maximum DC reverse voltage VR140 150 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per device IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform 30
A
per leg 15
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
1000
10 ms sine or 6 ms rect. pulse 340
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 90 mH 11.25 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
VS-30CPQ140-N3, VS-30CPQ150-N3
www.vishay.com Vishay Semiconductors
Revision: 02-Jan-18 2Document Number: 96455
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
15 A TJ = 25 °C 1.00
V
30 A 1.19
15 A TJ = 125 °C 0.78
30 A 0.93
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.1 mA
TJ = 125 °C 15
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 340 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to 175 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 2.20
°C/W
Maximum thermal resistance,
junction to case per package DC operation 1.10
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.24
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style TO-247AC 3L 30CPQ140
30CPQ150
VS-30CPQ140-N3, VS-30CPQ150-N3
www.vishay.com Vishay Semiconductors
Revision: 02-Jan-18 3Document Number: 96455
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Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
100
10
1000
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.5 1.0 1.5 2.0 2.5 3.00
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.0001
0.1
0.01
0.001
100
10
1
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
50 75 100 125 150025
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
30 60 90 120 150
0
TJ = 25 °C
0.001
0.01
1
0.1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
110100
D = 0.33
D = 0.50
D = 0.25
D = 0.33
D = 0.17
D = 0.08
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
VS-30CPQ140-N3, VS-30CPQ150-N3
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Revision: 02-Jan-18 4Document Number: 96455
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Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
120
140
160
180
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
5101520250
DC
Square wave (D = 0.50)
80 % Rated VR applied
See note (1)
0
4
8
12
16
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
5101520250
DC
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000 1000010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-30CPQ140-N3, VS-30CPQ150-N3
www.vishay.com Vishay Semiconductors
Revision: 02-Jan-18 5Document Number: 96455
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30CPQ140-N3 25 500 Antistatic plastic tube
VS-30CPQ150-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96138
Part marking information www.vishay.com/doc?95007
- Current rating (30 = 30 A)
- Circuit configuration:
C = common cathode
- Package:
P = TO-247
- Schottky “Q” series
- Voltage code
Device code
62 43 5 7
30 C P Q 150 -N3VS-
1
-Vishay Semiconductors product
-
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
7
1
140 = 140 V
150 = 150 V
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jun-17 1Document Number: 96138
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247AC 3L
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M (4)
(4)
R/2 (2)
B
2 x R (2)
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
L1 (5)
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A(Datum B)
D1 (4)
4
E1
0.01 BD
M M
View A - A
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
D2
Ø P1
Ø P (6)
Thermal pad
(3)
E
Legal Disclaimer Notice
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