© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 1
1Publication Order Number:
BC637/D
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC637
BC639
VCEO 60
80
Vdc
Collector - Base Voltage
BC637
BC639
VCBO 60
80
Vdc
Emitter - Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD800
12
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
COLLECTOR
2
3
BASE
1
EMITTER
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 14
x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
BC63
9−16
AYWW G
G
BC
63x
AYWW G
G
BC637, BC639, BC639−16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) BC637
BC639
V(BR)CEO 60
80
−
−
−
−
Vdc
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
(IC = 100 mAdc, IB = 0) BC639−16
V(BR)CES 120 − −
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) BC637
BC639
V(BR)CBO 60
80
−
−
−
−
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
−
−
100
10
nAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) BC637
BC639
BC639−16ZLT1
(IC = 500 mA, VCE = 2.0 V)
hFE 25
40
40
100
25
−
−
−
−
−
−
160
160
250
−
−
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
− − 0.5
Vdc
Base − Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
− − 1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
−200 −
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−7.0 −
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
−50 −
pF
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping†
BC637G TO−92
(Pb−Free)
5000 Units / Bulk
BC637RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
BC639G TO−92
(Pb−Free)
5000 Units / Bulk
BC639RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
BC639ZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC639−16ZL1G TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC637, BC639, BC639−16
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
1000
1
2
5
10
20
50
100
200
500
1001 2 3 4 5 7 10 20 30 40 50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC635
BC637
BC639
PD TA 25°C
PD TC 25°C
SOA = 1S
PD TC 25°C
PD TA 25°C
500
200
100
50
20 1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = 2 V
500
300
100
50
20 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain — Bandwidth Product
VCE = 2 V
1
0.8
0.6
0.4
0.2
01 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
VCE(sat) @ IC/IB = 10
-0.2
-1.0
-2.2
-1.6
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = 2 VOLTS
DT = 0°C to +100°C
qV for VBE
BC637, BC639, BC639−16
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
BC637/D
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