2002. 2. 20 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA27
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
DARLINGTON TRANSISTOR
FEATURES
ᴌComplementary to MPSA77.
MAXIMUM RATINGS (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCE=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=10V, IB=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CES IC=100ỌA, IE=0 60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=100ỌA, IE=0 60 - - V
DC Current Gain
hFE(1) * VCE=5V, IC=10mA 10K - -
hFE(2) * VCE=5V, IC=100mA 10K - -
Collector-Emitter Saturation Voltage VCE(sat) * IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE * VCE=5V, IC=100mA - - 2 V
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
* Pulse Test : PWᴪ300ỌS, Duty Cycleᴪ2%.