This is information on a product in full production.
November 2012 Doc ID 8526 Rev 11 1/24
24
STB10NK60Z, STP10NK60Z,
STP10NK60ZFP, STW10NK60Z
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET
in I2PA K , D 2PAK, TO-220, TO-220FP, TO-247 packages
Datasheet production data
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max IDPw
STB10NK60Z-1 600 V < 0.75 Ω10 A 115 W
STB10NK60ZT4 600 V < 0.75 Ω10 A 115 W
STP10NK60Z 600 V < 0.75 Ω10 A 115 W
STP10NK60ZFP 600 V < 0.75 Ω10 A 35 W
STW10NK60Z 600 V < 0.75 Ω10 A 156 W
TO-247
D2PAK
TO-220FP
12
3
1
3
TA B
I2PAK
TO-220
123
123
1
2
3
TAB
TAB
Table 1. Device summary
Order codes Marking Package Packaging
STB10NK60Z-1 B10NK60Z I²PAK Tube
STB10NK60ZT4 B10NK60Z D²PAK Tape and reel
STP10NK60Z P10NK60Z TO-220 Tube
STP10NK60ZFP P10NK60ZFP TO-220FP Tube
STW10NK60Z W10NK60Z TO-247 Tube
www.st.com
Contents STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
2/24 Doc ID 8526 Rev 11
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical ratings
Doc ID 8526 Rev 11 3/24
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
I²PAK
D²PAK
TO-220
TO-220FP TO-247
VDS Drain-source voltage 600 V
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 10 10(1)
1. Limited by maximum junction temperature
10 A
IDDrain current (continuous) at TC = 100 °C 5.7 5.7 (1) 5.7 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 36 36 (1) 36 A
PTOT Total dissipation at TC = 25 °C 115 35 156 W
Derating factor 0.92 0.28 1.25 W/°C
ESD Gate-source human body model
(R = 1,5 kΩ, C = 100 pF) 4kV
dv/dt (3)
3. ISD < 10A, di/dt < 200A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
-- 2500 -- V
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
I²PAK
D²PAK TO-220 TO-220FP TO-247
Rthj-case Thermal resistance junction-case max 1.09 3.6 0.8 °C/W
Rthj-pcb
Thermal resistance junction-pcb max
(when mounted on minimum footprint) 35 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 50 °C/W
Electrical ratings STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
4/24 Doc ID 8526 Rev 11
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 9A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAR, VDD= 50 V) 300 mJ
EAR
Repetitive avalanche energy
(pulse width limited by Tj max) 3.5 mJ
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics
Doc ID 8526 Rev 11 5/24
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS= 0 600 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V,
VDS = 600 V, TC=125 °C
1
50
µA
µA
IGSS
Gate body leakage
current (VDS = 0) VGS = ± 20 V ±10 µA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on-
resistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward
transconductance VDS =15 V, ID = 4.5 A
-
7.8 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
1370
156
37
pF
pF
pF
Coss eq(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Equivalent output
capacitance VGS=0, VDS =0 to 480 V 90 pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480 V, ID = 8 A
VGS =10 V
(see Figure 20)
50
10
25
70 nC
nC
nC
Electrical characteristics STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
6/24 Doc ID 8526 Rev 11
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
-
20
20
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
55
30
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
10
36
A
A
VSD(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD=10 A, VGS=0 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8 A, di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
570
4.3
15
ns
µC
A
Table 9. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO
Gate-source breakdown
voltage Igs=± 1 mA, (ID = 0) 30 - - V
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics
Doc ID 8526 Rev 11 7/24
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for I²PAK,
D²PAK and TO-220
Figure 3. Thermal impedance for I²PAK,
D²PAK and TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
Electrical characteristics STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
8/24 Doc ID 8526 Rev 11
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on-resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics
Doc ID 8526 Rev 11 9/24
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on-resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Maximum avalanche energy vs
temperature
Figure 18. Normalized BVDSS vs temperature
Test circuits STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
10/24 Doc ID 8526 Rev 11
3 Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data
Doc ID 8526 Rev 11 11/24
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:
www.st.com
.
ECOPACK® is an ST trademark.
Table 10. I²PAK (TO-262) mechanical data
DIM.
mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
12/24 Doc ID 8526 Rev 11
Figure 25. I²PAK (TO-262) drawing
0004982_Rev_H
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data
Doc ID 8526 Rev 11 13/24
Table 11. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2
Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
14/24 Doc ID 8526 Rev 11
Figure 26. D²PAK (TO-263) drawing
Figure 27. D²PAK footprint(a)
a. All dimensions are in millimeters
0079457_T
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data
Doc ID 8526 Rev 11 15/24
Table 12. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P3.75 3.85
Q2.65 2.95
Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
16/24 Doc ID 8526 Rev 11
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data
Doc ID 8526 Rev 11 17/24
Table 13. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
18/24 Doc ID 8526 Rev 11
Figure 29. TO-220FP drawing
7012510_Rev_K_B
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data
Doc ID 8526 Rev 11 19/24
Table 14. TO-247 mechanical data
Dim.
mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
P 3.55 3.65
R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
20/24 Doc ID 8526 Rev 11
Figure 30. TO-247 drawing
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Packaging mechanical data
Doc ID 8526 Rev 11 21/24
5 Packaging mechanical data
Table 15. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
Packaging mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
22/24 Doc ID 8526 Rev 11
Figure 31. Tape
Figure 32. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Revision history
Doc ID 8526 Rev 11 23/24
6 Revision history
Table 16. Document revision history
Date Revision Changes
29-Sep-2005 6Inserted ecopack indication
29-Oct-2005 7 New value inserted in
Ta bl e 6
11-Apr-2006 8 New template
19-Sep-2006 9 Unit changed in
Ta b l e 5
17-Nov-2008 10 Updated
Section 4: Package mechanical data
15-Nov-2012 11
Updated
Table 2: Absolute maximum ratings
,
Ta b l e 3: The r ma l da ta
,
Table 5: On /off states
and
Table 9: Gate-source Zener diode
.
Updated
Section 4: Package mechanical data
and
Section 5:
Packaging mechanical data
.
Minor text changes.
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
24/24 Doc ID 8526 Rev 11
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