1N3208 Series
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Revision: 08-Apr-13 1Document Number: 93496
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
Notes
(1) JEDEC registered values
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
PRODUCT SUMMARY
IF(AV) 15 A
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
15 (1) A
TC150 (1) °C
IFSM
50 Hz 239 A
60 Hz 250 (1)
I2t50 Hz 286 A2s
60 Hz 260
I2t3870 A2s
VRRM Range 50 to 600 V
TJ- 65 to 175 °C
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
(TJ = - 65 °C TO 175 °C)
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 175 °C)
V
1N3208 50 (1) 50 (1)
1N3209 100 (1) 100 (1)
1N3210 200 (1) 200 (1)
1N3211 300 (1) 300 (1)
1N3212 400 (1) 400 (1)
1N3213 500 (1) 500 (1)
1N3214 600 (1) 600 (1)
1N3208 Series
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Revision: 08-Apr-13 2Document Number: 93496
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2t x tx
Notes
(1) JEDEC registered values
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° sinusoidal conduction 15 (1) A
150 (1) °C
Maximum peak one cycle
non-repetitive surge current IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
VRRM applied
239
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 250 (1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with VRRM
applied following surge = 0
284
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 297
Maximum I2t for fusing
I2t
t = 10 ms With rated VRRM applied
following surge,
initial TJ = 150 °C
286
A2s
t = 8.3 ms 260
Maximum I2t for individual
device fusing
t = 10 ms With VRRM = 0 following
surge, initial TJ = 150 °C
403
t = 8.3 ms 368
Maximum I2t for individual
device fusing I2t (2) t = 0.1 ms to 10 ms, VRRM = 0 following surge 3870 A2s
Maximum forward voltage drop VFM IF(AV) = 15 A (47.1 A peak), TC = 150 °C 1.5 (1) V
Maximum average reverse current IR(AV) Maximum rated IF(AV) and TC = 150 °C 10 (1) mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range TJ, TStg - 65 to 175 (1) °C
Maximum internal thermal
resistance, junction to case RthJC DC operation 0.65
°C/W
Thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.25
Maximum allowable mounting torque
(+ 0 %, - 10 %)
Not lubricated thread, tighting on nut (2) 3.4 (30)
Lubricated thread, tighting on nut (2) 2.3 (20)
Not lubricated thread, tighting on hexagon (3) 4.2 (37)
Lubricated thread, tighting on hexagon (3) 3.2 (28)
Weight 28.5 g
1oz.
Case style JEDEC DO-203AB (DO-5)
1N3208 Series
www.vishay.com Vishay Semiconductors
Revision: 08-Apr-13 3Document Number: 93496
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 1 - Maximum Forward Voltage vs. Forward Current
Ø
Conduction period
180°
120°
60°
DC
110
0
5
10
15
20
25
30
35
120 130 140 150 160 170 180
Average Forward Current
Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
At any rated load condition and
with rated VRRM following surge
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
1
100
150
200
250
246810 20 40 60
50 Hz 60 Hz
Ø
Conduction period
180°
120°
60°
DC
TJ = 140 °C
0
0
10
20
30
40
50
60
70
80
90
100
120
10 20 30 40 50 60 70 8090
Average Forward Power Loss
Over Full Cycle (W)
Average Forward Current Over Full Cycle (A)
10
10
102
102103104
103
104
105
Average Forward Power Loss
Over Full Cycle (W)
Average Forward Current Over Full Cycle (A)
Ø
Conduction period
TJ = 140 °C
DC
60°
180°
120°
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1
01 234567
10
102
103
TJ = 140 °C
TJ = 25 °C
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95360
Document Number: 95360 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 29-Sep-08 1
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
1/4" 28UNF-2A
for metric devices: M6 x 1
Ø 14.6 (0.57)
4 (0.16) MIN.
Ø 4.10 (0.16)
Ø 3.80 (0.15)
25.4 (1.0) MAX.
1.0 (0.04)
MAX.
17.40 (0.68) MIN.
Across flats
6.1 (0.24)
7.0 (0.28)
10.7 (0.42)
11.5 (0.45)
10.8 (0.43)
11.4 (0.45)
1.03 (0.04)
MAX.
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Revision: 02-Oct-12 1Document Number: 91000
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