BL Galaxy Electrical Production specification
NPN general purpose Transistor BC847AT/BT/CT
Document number: BL/SSSTH001 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 B45 V
Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA
DC current gain BC847AT
BC847BT
BC847CT
hFE VCE=5V,IC=2mA
110
200
420
220
450
800
Collector-emitter saturation voltage VCE(sat)
IC=10mA, IB=0.5mA
I
B
C=100mA, IBB=5mA 0.25
0.6 V
Base-emitter saturation voltage VBE(sat)
IC=10mA, IB=0.5mA
I
B
C=100mA, IBB=5mA 0.7
0.9 V
Transition frequency fT
VCE=5V,
IC=10mA,f=100KHz 100 MHz
Collector output capacitance Cob VCE=5V,f=1KHz 4.5 Pf
Noise figure NF VCE=5V,f=1KHz
RS=2KΩ,BW=200Hz 10
4 dB
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified