Aplitrou PRODUCT CATALOG Devices, Inc. ORDERING INFORMA MOS AND JUNCTION FIELD EFFECT TRANSISTOR CHIPS The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales. All products that deviate from the standard JEDEC electrical parameters or the following conditions must be assigned a Solitron special house number (SXXXX). These exact deviations must be in the form of a letter, TWX or print. KDXXXX Tested die packaged in carrier arrays (waffle pack) KVXXXX Tested die packaged in freon filled vials. WCXXXX Unprobed wafers classed into specified JEDEC part number (5S), Not scribed or sawed. WDXXXX Tested and inked wafer, sawed and broken on expanded plastic. WWXXXX Tested and inked wafer, Not scribed or sawed. 1. The above part numbers meet or exceed Solitrons QA 86 optical requirements. 2. To order or identify optical requirements to MIL-SDT-750 method 2072 for J-FETS or MIL-SDT-883, method 2010 for MOS FETS, use the suffix M (Example: PN 2N5114 to MIL-SDT-750, method 2072, die in carrier waffle pack use KD5114M as the part number). 3. All red inked die on probed wafers do not meet specified electrical parameters. JEDEC GEOMETRY TEDEC GEOMETRY JEDEC GEOMETRY JEDEC GEOMETRY 2N2386 FP 5.3 2N3367 FN 22.2 2N3686A FN 22.2 2N3957 DMN 23.2 2N2497 FP 5.3 2N3368 FN 3.6 2N3687 FN 22.2 2N3958 FN 22.2 2N2498 FP 5.3 2N3369 FN 22.2 2N3687A FN 22.2 2N3958 DMN 23.2 2N2499 FP 5.3 2N3370 FN 22.2 2N3695 FP 22.2 2N3966 FN 2.5 2N2500 FP 5.3 2N3376 FP 22.2 2N3696 FP 22.2 2N3967 FN 2.5 2N2606 FP 22.2 2N3378 FP 22.2 2N3697 FP 22.2 2N3968 FN 3.6 2N2607 FP 22.2 2N3379 FP 22.2 2N3698 FP 22.2 2N3969 FN 3.6 2N2607 FP 5.3 2N3380 FP 22.2 2N3819 FN 2.5 2N3970 FN 7.1 2N2608 FP 22.2 2N3382 FP 7.3 2N3820 FP 8.3 2N3971 FN 7.1 2N2608 FP 5.3 2N3384 FP 7.3 2N3821 FN 3.6 2N3972 FN 7.1 2N2609 FP 5.3 2N3386 FP 7.3 2N3822 FN 3.6 2N3993 FP 7.3 2N2841 FP 22.2 2N3436 FN 3.6 2N3823 FN 2.5 2N3994 FP 7.3 2N2842 FP 22.2 2N3437 FN 3.6 2N3824 FN 3.6 2N4003 FN 2.5 2N2842 FP 5.3 2N3438 FN 3.6 2N3909 FP 5.3 2N4065 FMP ld 2N2843 FP 5.3 2N3452 FN 2.2 2N3909A FP 5.3 2N4084 DMN 113.3 2N2844 FP 5.3 2N3453 FN 2.2 2N3920A DMN 113.3 2N4084 FN 5.5 2N3068 FP 22.2 2N3454 FN 2.2 2N3921 FM 5.5 2N4085 DMN 113.3 2N3069 FP 22.2 2N3456 FN 2.2 2N3921 DMN 113.3 2N4085 FN 5.5 2N3070 FP 5.3 2N3457 FN 2.2 2N3921 FN 3.6 2N4091 FN 7.1 2N307) FP 22.2 2N3458 FN 3.6 2N3922 FN 5.5 2N4092 FN 7.1 2N3328 FP 22.2 2N3459 FN 3.6 2N3954 FN 22.2 2N4093 FN 7.1 2N3329 FP 5.3 2N3460 FN 22.2 2N3954 DMN) 23.2 2N4116 FN 2.5 2N3330 FP 5.3 2N3684 FN 22.2 2N3955 FN 22.2 2N4117 FN 2.2 2N3331 FP 5.3 2N3684A FN 22.2 2N3955 DMN 23.2 2N4117A FN 2.2 2N3332 FP 5.3 2N3685 FN 22.2 2N3956 FN 22.2 2N4118 FN 2.2 2N3365 FN 22.2 2N3685A FN 22.2 2N3956 DMN 23.2 2N4118A FN 2.2 2N3366 FN 22.2 2N3686 FN 22.2 2N3957 - FN 22.2 2N4119 FN 2.2 Note: Where several elements are listed against a Jedec part number, the first listed is prime for the Jedec part number. For critical designs or applications the factory should be consulted. E-1PRODUCT CATALOG MOS AND JUNCTION FIELD EFFECT TRANSISTOR GHIPS JEDEC GEOMETRY JEDEC GEOMETRY JEDEC GEOMETRY JEDEC GEOMETRY 2N4119A FN 2.2 2N4868 FN 88.8 2N5434 FN 9.0 2N5638 FN 7.1 2N4139 FN 88.8 2N4868 FN 39.8 2N5452 FN 22.2 2N5639 FN 7.1 2N4220 FN 22.2 2N4868A FN 88.8 2N5452 DMN 23.3 2N5640 FN 7.1 2N4220A FN 22.2 2N4869 FN 88.8 2N5453 FN 22.2 2N5653 FN 7.1 2N4221 FN 3.6 2N4869A FN 88.8 2N5453 DMN 23.2 2N5654 FN 7.1 2N4221 FN 5.5 2N4977 FN 9.1 2N5453 DMN 23.2 2N5668 FN 2.5 2N4221A FN 3.6 2N4978 FN 9.1 2N5454 FN 22.2 2N5669 FN 2.5 2N4222 FN 3.6 2N4979 FN 7.1 2N5454 DMN 23.2 2N5670 FN 2.5 2N4222 FN 5.5 2N5013 FN 2.5 2N5457 FN 2.5 2N5902 FN 2.2 2N4222A FN 3.6 2N5014 FN 2.5 2N5458 FN 2.5 2N5902 DMN 2.4 2N4223 FN 2.5 2N5018 FP 7.3 2N5459 FN 2.5 2N5903 FN 2.2 2N4224 FN 2.5 2NS019 FP 7.3 2N5460 FP 5.3 2N5903 DMN) 2.4 2N4302 FN 22.2 2N5020 FP 5.3 2N5461 FP .3 2N5904 FN 2.2 2N4303 FN 22.2 2N5021 FP .3 2N5462 FP 5.3 2N5904 DMN 2.4 2N4304 FN 22.2 2NS033 FP 5.3 2N5463 FP 5.3 2N5905 FN 2.2 2N4338 FN 22.2 2N5045 FN 3.6 2N5464 FP 5.3 2N5905 DMN 2.4 2N4339 FN 22.2 2N5046 FN 3.6 2N5465 FP 5.3 2N5906 FN 2.2 2N4340 FN 22.2 2N5047 FN 3.6 2N5484 FN 2.5 2N5906 DMN 2.4 2N4341 FN 22.2 2NS078 FN 2.5 2N5485 FN 2.5 2N5907 FN 2.2 2N4341 FN 3.6 2N5105 FN 2.5 2N5486 FN 2.5 2N5907 DMN 2.4 2N4343 FP 5.3 2N5114 FP 7.3 2N5515 FN 39.8 2N5908 FN 2.2 2N4352 FMP 1. 2N5115 FP 7.3 2N5516 FN 39.8 2N5908 DMN 2.4 2N4353 FMPZ 1.1 2N5116 FP 7.3 2N5517 FN 39.8 2N5909 FN 2.2 2N4360 FP 5.3 2N5163 FN 3.6 2N5518 FN 39.8 2N5909 DMN 2.4 2N4381 FP 5.3 2N5196 FN 22.2 2N5519 FN 39.8 2N5911 DMN 36.1 2N4382 FP 5.3 2N5197 FN 22.2 2N5520 FN 39.8 2N5911 FN 36.1A 2N4391 FN 7.1 2N5198 FN 22.2 2N5521 FN 39.8 2N5912 DMN 36.1 2N4392 FN 7.1 2N5199 FN 22.2 2N5522 FN 39.8 2N5912 FN 36.1A 2N4393 FN 7.1 2N5245 FN 2.5 2N5523 FN 39.8 2N5949 FN 2.5 2N4416 FN 2.5 2N5246 FN 2.5 2N5524 FN 39.8 2N5950 FN 2.5 2N4416A FN 2.5 2N5247 FN 2.5 2N5545 FN 3.6 2N5951 FN 2.5 2N4417 FN 2.5 2N5248 FN 2.5 2N5545 DMN 23.2 2N5952 FN 2.5 2N4445 FN 9.1 2N5268 FP 5.3 2N5546 FN 3.6 2N5953 FN 2.5 2N4446 FN 9.1 2N5319 FP 7.3 2N5546 DMN 23.2 2N6656 FVNZ 1.8 2N4447 FN 9.1 2N5339 FN 22.2 2N5547 FN 3.6 2N6657 FVNZ 1.8 2N4448 FN 9.1 2N5358 FN 22.2 2N5547 DMN 23.2 2N6658 FVNZ 1.8 2N4856 FN 7.1 2N5360 FN 22.2 2N5555 FN 2.5 2N6659 FVNZ 1.8 2N4856A FN 7.1 2N5361 FN 22.2 2N5556 FN 2.5 2N6660 FVNZ 1.8 2N4857 FN 7.1 2N5362 FN 3.6 2N5557 FN 2.5 2N6661 FVNZ 1.8 2N4857A FN 7.1 2N5363 FN 2.5 2N5558 FN 2.5 3N163 FMP 11 2N4858 FN 7.1 2N5364 FN 2.5 2N5562 FN 5.5 3N164 FMP 1.1 2N4858A FN 7.1 2N5391 FN 88.8 2N5563 FN 5.5 3N165 DFMP 1.0 2N4859 FN 7.1 2N5397 FN 36.1 2N5564 FN 7.1 3N166 DFMP 1.0 2N4859A FN 7.1 2N5398 FN 36.1 2NS565 FN 7.1 3N172 FMPZ 1.1 2N4860 FN 7.1 2N5432 FN 9.1 2N5566 FN 7.1 3N173 FMPZ 1.1 2N4861 FN 7.1 2NS432 FN 9.0 2N5591 FN 88.8 3N189 DFMPZ 2.0 2N4861A FN 7.1 2N5433 FN 9.1 2N5592 FN 88.8 3N190 DFMP 2.0 2N4867 FN 39.8 2N5433 FN 9.0 2N5593 FN 88.8 3N191 DFMP 2.0 2N4867A FN 39.8 2N5434 FN 7.1 2N5594 FN 88.8 Note: Where several elements are listed against a Jedec part number, the first listed is prime for the Jedec part number. For critical designs or applications the factory should be consulted. E-2PRODUCT CATALOG MOS AND JUNCTION FIELD EFFECT TRANSISTOR CHIPS JEDEC GEOMETRY JEDEC GEOMETRY JEDEC GEOMETRY JEDEC GEOMETRY 3108 FN 9.1 SDFS505 FN 39.8 SFN250 SVN 415 U304 FP 7.3 3109 FN 9.1 SDF506 FN 39.8 SFN320 SVN 402 U305 FP 7.3 J110 FN 9.1 SDF507 FN 39.8 SFN330 SVN 405 U306 FP 1.3 Jlll FN 7.1 SDF508 FN 39.8 SFN350 SVN 415 U308 FN 71.1 yl2 FN 7.1 SDF509 FN 39.8 SFN420 SVN 402 309 FN 71.1 J113 FN 7.1 SDF510 FN 39.8 SFN430 SVN 405 U310 FN 71.1 J174 FP 7.3 SDF511 FN 39.8 SFN450 SVN 415 U311 FN so71.1 J175 FP 7.3 SDF512 FN 39.8 U312 FN 36.1 SFNFO61 SVN 101 3176 FP 7.3 SDF513 FN 39.8 SFNFO65 SVN 105 U314 FN 36.1 J177 FP 7.3 SDF514 FN 39.8 SFNF101 SVN 101 u315 FN 36.1 J201 FN 22.2 SDFS515 FN 39.8 SFNF10S SVN 105 U316 FN 71.1 J202 FN (22.2 SDF530 DCN 2.3 SFNF120 SVN 402 U320 FN 9.1 00 tN ase SDF531 DCN 2.3 SFNF121 SVN 402 U321 FN 9.1 : SDF532 DCN 2.3 SFNF201 SVN 101 U322 FN 9.1 Jall FN (36.1 SDF533 DCN 2.3 SFNF203. SVN 105 U350 FN 71.1 on an eo SDF534. DCN 2.3 | SFNF220 SVN 402 | ygai DMN 2.4 271 FP 73 SDF535 DCN 2.3 SFNF320 SVN 402 422 DMN 2.4 300 FN 361 SDF536 DCN 2.3 SFNF420 SVN 402 423 DMN 2.4 1304 FN 25 SDF537 DCN 2.3 SFNOO6S SVN 105 424 DMN 2.4 , SDF600 DMN 113.3 SFNSO61 SVN 101 U425 DMN 2.4 1305 FN 2.5 1309 FN 71.1 SDF601 DMN 113.3 SFNS101_ SVN" 101 U426 DMN 2.4 . SFNS201 SVN 101 SDF602 DMN 113.3 U430 FN 71.1 1310 FN 71.1 SDF603 DMN 113.3 SU2080 DMN 113.3 U431 FN 71.1 J410 DMN 23.2 Tall DMN 23.2 SDF604 DMN 113.3 $U2081 DMN 113.3 D SDF605 DMN 113.3 SU2365 DMN 113.3 U1897E FN 7.1 M4l2 MN 23.2 SU2366 DMN 113.3 U1898E FN 7.1 KK4391 FN 7.1 SDF1001_ FN 9.0 SU2367 DMN 113.3 U1899E FN 7.1 KK4392 FN 7.1 SDE 100g tN oo $U2368 DMN 113.3 U1994E FN 2.5 KK4393 FN 7.1 SDF 1004 FN 9.0 SU2369 DMN 113.3 UC1S5 FN 25 MEMS11 FMPZ 1.1 SDF1008 FN 9.0 SVN33A] FVN_ 1.8 ucz200 FN 5.5 SVN33AK FVN 1.8 uc201 FN 5.5 MFE823 mol SDF8200 = FMN_ = 38.3 SVN66A] FVN 1.8 UC210 FN 55 MFE823 FMP 1.1 SDF8201 FMNZ 35.3 , MFE2000 FN os SDra202 =OFMN 38.3 SVN66AK FVN 1.8 uCc220 FN 5.5 . . SVNO8AJ] FVN 1.8 MFE2001 FN 2.5 SDF8203 FMNZ 35.3 SYNOSAK FVN 18 uCc240 FN 88.8 MFE2004 FN 7.1 SDF9210 FMN 35.3 TIss8 EN os UC241 FN 88.8 MFE2008 FN 7.1 SDF9211 FMNZ 35.3 uc2s0 FN 7.1 MFE2006 FN 7.1 TISS9 FN 2.5 UC251 FN 7.1 . SDF9212 FMN 35.3 TIS73 FN 7.1 uc400 FP 21 MFE213300 FN 7.1 SDF9213. FMNZ 35.3 TIS74 IN 71 MPF102 FN 2.5 SDF9214. DMN 35.3 TIS75 FN 71 UC401 FP 5.3 MPF108 FN 2.5 SDF9215 FMNZ 35.3 TIS88A FN 25 UC410 FP 5.3 MPF109 FN (3.6 SFNO30 SVN 405 200 FN 711 UC420 FP 5.3 MPF111 FN 2.5 SFNOSO SVN 415 U201 FN 7.1 UC4S0 FP 7.3 MPF112 FN 2.5 SFN105 SVN 105 U202 FN 721 UC451 FP 7.1 P1086E FP 7.3 SFN120 SVN 402 U231 DMN 23.2 UCT714 FN 25 P1087E FP 7.3 SFN121 SVN 402 U232 DMN 23.2 UCT734 FN 25 SDF500 FN 39.8 SFN130 SVN 405 U233 DMN 23.2 FMP 1.1 SDF501 FN 39.8 SFN150 SVN 415 U234 DMN 23.2 Neon MP1] SDF502 FN 39.8 SFN203 SVN 105 U235 DMN 23.2 UCI764 FMP Ld SDF503 FN 39.8 SFN220 SVN 402 U257 FN 36.1 , SDF504 FN 39.8 SFN230 SVN 405 U257 DMN 36.1A Note: Where several elements are listed against a Jedec part number, the first listed is prime for the Jedec part number. For critical designs or applications the factory should be consulted. E-3PRODUCT CATALOG _ P-CHANNEL ENHANCEMENT DUAL MOS FET DINU? 035" {0.889mm) __ Die Size: 26x35 (mils) 0.660 x 0.88%(mm) 4x4 (mils) Pad Size: 0.102 x 0.102(mm) BODY-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS l | CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bypss 35 v Vas = 0, Ip = 10pA Ipss 10 400 pA Vas = 0, Vps =-20V Ofs 1500 3000 pmho Vps =-15V, Ip, = -l0mA, f = 1KHz Igss 0.1 10 pA Vas =-40, Vps = 0 Dves 20 200 mV Vps =-158V, Ip = -S0QuA Vas -2.0 Vv Vps =-15V, Ip = -l0uA Cres 0.4 0.7 pF Vps =-15V, Ip = -l10mA, f = 1MHz Cisse 2.0 3.0 pF Vps =-15V, Ip = -l0mA, f =1MHz Cigs 2.0 3.0 pF Vps =-15V, Ip = -10mA, f = 1MHz en 50 nV/~ Hz Vps =-15V, Ip = -lmA, f = IKHz TYPICAL DEVICE TYPES: 3N165, 3N166 E-4Ip (mA) Vow) DRAIN CHARACTERISTIC COMMON-SOURCE Vesi)= -20V Vest) =-18V Vesih=-16V Ves) =-14V Vas) =-12V Ves =-10V 0 10 -20 30 -40 50 DRAIN-SOURCE VOLTAGE-(VDS}-VOLTS LOW-LEVEL ON" DRAIN-SOURCE VOLTAGE VS GATE-SOURCE BIAS VOLTAGE =10MA ID(on)= 5mA Ip(on) =.1 0 -4.0 -8.0 12 16 -20 GATE-SOURCE FORWARD BIAS-(VGS)-VOLTS OHMS 08 0.6 0.4 0.2 +0.2 +04 +06 +0.8 +1 1000 500 100 50 PRODUCT CATALOG P-CHANNEL ENHANCEMENT DUAL MOS FET CHIP TYPE DFMWP1 LOW LEVEL DRAIN CHARACTERISTIC Vesin= -10V C05 +0.4403402+4+01 0 -01 02 03 04 -05 DRAIN-SQURCE VOLTAGE-(VDS)-VOLTS STATIC DRAIN-SOURCE ON RESISTANCE VS GATE-SOURCE BIAS Tey) -4.0 8.0 12 -16 -20 24 28 GATE-SOURCE FORWARD BIAS-(VGS)-VOLTS E-5PRODUGY CATALOG P-CHANNEL ENHANCEMENT DUAL MOS FET CHIP NUMBER ID rw isa] +. Die Size: Pad Size: 029" ' (0.737mm) 29x35 = (mils) 0.737 x 0.889(mm) 5x5 (mils) 0.127 x 0.127(mm) BODY-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bypss -30 -60 v Vas = 0, Ip = -10QuA Ipss -10 -500 pA Vps =-15V, Vas = 0, Van = 0 Sts 1500 4000 pmho Vps =-15V, Ip, =-10mA, f = 1KHz Isps 350 pA Vap = 0, Vsp = -15V, Vpp = 0 IDS 300 Q Ves =-20V, Ip = -100uA VGS(th) -1.5 -5.0 Vv Vps =-15V, Ip =-100nA Cras 8 15 pF Vps =-15V, Ip =~l0uA, f = IMHz Ciss 3.3 4.5 pF Vps =-15V, Ip =-10mA, f =1MHz n 50 nV/ Hz Vps = -15V, Ip = -ImA, f = 1KHz Vesith (1-2) 25 200 mV Vps = -15V, Ip = -500uA TYPICAL DEVICE TYPES: 3N190, 3N191 E-6PRODUCT CATALOG P-CHANNEL ENHANCEMENT DUAL MOS FET GHIP TYPE DFMWP 2 FIGURE 1 -40 -30 0 -10 -20 -30 -40 -50 Drain-Source Voltage(V,,,)Volts Drain CharacteristicCommon Source On-State Drain Current(I,),9,,)mA n 35 FIGURE 3 el wo oo a Oo 1 Pw On-State Drain Current(Ip,,,))mA 1 a @ & 0 -40 -80 -I2 -16 -20 -24 -26 Gate-Source Forward Bias(V9,,,) Volts Turn-On Characteristics FIGURE 5 i oO. 0 - -40 -80 -12 -16 ~20 Gate-Source Forward Bias(V,,.,;,)Volts Static Drain-Source On-Resistance vs Gate-Source Forward Bias Drain-Source On-Resistance(fpg(on,)Ohms On-State Drain Current(L))(o,,;)MA Drain-Source Voltage(Vpg)Volts On-State Drain Current(Ip ,4n))mA FIGURE 2 +0.2 +0.4 +06 +0.8 *1005 404 +03+02+0) O -Ol -G2-03-04 -05 Drain-Source Voltage (Vpysg)Volts Low Level Drain Characteristic FIGURE 4 M6 -40 -80 -I2 -I6 -20 -24 -26 Gate-Source Forward Bias(V,;.,,,)Volts Turn-On Characteristics FIGURE 6 1000 500 100 50 10 O +-40 -80 -12 -I6 -20 -24 -28 Gate-Source Forward Bias(V,,.,,,)Volts Low-Level On Drain-Source Voltage vs Gate-Source Forward Bias Voltage E-7PRODUCT CATALOG P-CHANNEL ENHANCEMENT DUAL MOS FET CHIP NUMBER oer Die Size: 29x35 = (mils) 0.737 x 0.889(mm) 5x5 (mils) Pad Size: 0.127 x 0.127(mm) BODY-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bypss -30 -60 Vv Ves = 0, Ip =-lduA Ipss -40 500 pA Vps =~15V, Vas = 0, Vas = 0 Sts 1500 4000 pmho Vps =-15V, Ip, = -10mA, f = 1KHz Isps 800 pA Vas = 0, Vsp = -15V, VpB = 0 DS 220 350 Q Vas = -20V, Ip =-l0QuA V@S(th) -1.5 -5.0 Vv Vps = -15V, Ip =-l0uA, Vas = 0 Cras 1.0 1.5 pF Vps = -15V, Ip = -l10mA, f = 1MHz Ciss 3.5 4.5 pF Vps = -15V, Ip = -10mA, { =1MHz 50 nV/ Hz Vps = -15V, Ip = -lmA, ft = 1KHz Ves(th) 1-2 25 100 mV Vps = -15V, Ip = -S00uA TYPICAL DEVICE TYPES: E-8 3N188, 3N189PRODUCT CATALOG P-CHANNEL ENHANCEMENT DUAL MOS FET CHIP TYPE DEFMPZ 2 FIGURE 1 -40 -30 -20 Qo ae] -10 -20 -30 -40 -50 Drain-Source Voltage(V,,.)Volts Drain CharacteristicCommon Source On-State Drain Current(I,,(9,,)mA FIGURE 3 -.0l 0 -40 -80 -I2 -16 -20 -24 -28 Gate-Source Forward Bias(V,,.,,,)Volts Turn-On Characteristics On-State Drain Current(Ip,,,,)mA FIGURE 5 1 ol 0 -40 -@0 8 -12 16 -20 Gate-Source Forward Bins(V,,.,,,)Volts Static Drain-Source On-Resistance vs Gate-Source Forward Bias Drain-Source On-Resistance(Tpg,4,))Ohms Drain-Source Voltage(Vps)Volts On-State Drain Current(Ipjoq,))MA On-State Drain Current(1p (5,,)mA FIGURE 2 +0.2 +0.4 +06 +0.8 1.0 N05 +04 403-0240) 0 -O1 -02-03-04 -05 Drain-Source Voltuge(V),,)Volts Low Level Drain Characteristic FIGURE 4 @ -40 -@0 -I2 -I6 -20 -24 -26 Gate-Source Forward Bias(V,,,;,)Volts Turn-On Characteristics FIGURE 6 1000 500 100 50 10 0 -40 -@0 +12 -I6 -20 -24 -26 Gate-Source Forward Bias(V,,.,;,)-Volts Low-Level On Drain-Source Voltage vs Gate-Source Forward Bias Voltage E-9 _PRODUCT CATALOG N-CHANNEL DUAL JUNCTION FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum (0.559mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 022 > (0.589mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. Die Size: 22x22 = {mils) ose 4 Cail} b) 1 mi] (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 6.102 x 0.102(mm) TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Byass - 40 -55 - 60 Vv Vps = 0, Ig = -lvA Igss 0.2 5 pA Vps = 0, Vas = -20V Ipss 30 500 pA Vps = 10V, Ves, = Vp - 0.6 ~ 4.5 Vv Vps = 10, Ip = nA Sts 70 200 350 BS Vps = 10V, Vas = 0, F = 1KHz Ciss 2.8 3.5 pF Vps = 10V, Vas = 0, f = 1MHz Crss 0.7 1.5 pF Vps = 10V, Vas = 0, f = 1MHz Yos .02 1.0 BS Vps = 10V, Ip = 30nA, 1KHz TYPICAL DEVICE TYPES: 2N5902 - 2N5909 E-10Ip (mA) Gm(uS) 300 180 160 140 120 100 80 60 40 20 260 200 160 100 60 0 OUTPUT CHARACTERISTICS OV 1 2 3 4 5 6 7 8 Vpg-DRAIN-SOURCE VOLTAGE (VOLTS) 9 TRANSCONDUCTANCE CHARACTERISTICS 10 -0.4 0.8 1.2 Vas-GATE-SOURCE VOLTAGE (VOLTS) 1.8 Ip (mA) 350 200 150 100 50 1000 (Yes mS) 100 10 PRODUGY CATALOG N-CHANNEL DUAL JUNCTION FET ChIP TYPE DMNA.4 TRANSFER CHARACTERISTICS -0.4 0.8 . 1.2 1. Vgqs-GATE-SOURCE VOLTAGE (VOLTS) FORWARD TRANSCONDUCTANCE 10 100 Ip-DRAIN CURRENT (nA) 1000 E-l]PRODUCT CATALOG N-CHANNEL DUAL JUNCTION FET CHIP NUMBER Ss: Die Size: -26x 27 = (mils) 0.660 x 0.686(mm) 3.8 x 3.5(mils) Pad Size: 0.089 x 0.089(mm) CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGass ~-25 -35 v Vps = 0, Ig = WA Ipss 5 20 40 mA Vps = 10V, Vas = Vp 7-1 -6 Vv | Vps = 10V, Ip, = nA lass 10 100 pA Vps = 0, Vag = -15V Sts 4.5 6.0 10 ms Vps = 10V, Ip = 5mA, = 1MHz Crsg 1.0 LS pF Vps = 10V, Ip = 5mA, f = 1MHz n 4 20 nV/-Hz Vps = 10V, Ip = 5mA, f = 1KHz TYPICAL DEVICE TYPES: 2N5911, 2N5912, U257PRODUCT CATALOG N-CHANNEL DUAL JUNCTION FET CHIP WYRE DiMiIN SG. A COMMON SOURCE, SHORT CIRCUIT FORWARD TRANSADMITTANCE ZERO GATE VOLTAGE VS OPERATING DRAIN CURRENT DRAIN CURRENT - IDSS - mA Ytg (mS) Gg (mS) ip (mA) 01 2 3 4 5 6 7 8 Y 10 11 12 13 14 0 1 2 3 4 5 6 COMMON SOURCE DRAIN CURRENT - ID - mA GATE SOURCE PINCH OFF VOLTAGE COMMON-SOURCE TRANSFER CHARACTERISTIC DRAIN CHARACTERISTICS <, z Ey E fon a 10 9 8 7 6 5 4 3 2 1 Vs) E-13PRODUGYT CATALOG N-CHANNEL DUAL JUNCTION FET CHIP NUMBER HIN aoe o CONTACT METALLIZATION Top Contact: => 12,000 A Aluminum .038 (0.965mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 038" + _ _> {0.965mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. Die Size: 38x38 = (mils) 0.965 cae b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 0.089 x 0.089(mm) TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS By@ss -30 50 60 Vv Ip = 1A, Vps = 0 Igss 30 200 pA Vps = 0, Vas = -20V Ipss 1 6 15 mA Vps = i5V, Ves, = 0 Vp - 5 -2 -4 Vv Vps = 15V, Ip = 1nA Ofs 1000 8000 ps Vps = 15V, Vas = 0, f = 1KHz yOS 10 mho Vps = 15V, Ipq = 700uA Ciss 16 18 pF Vps = 15V, Vag = 0, = IMHz Cysg 5 6 pF Vps = 15V, Ves = 0,1 = 1MHz TYPICAL DEVICE TYPES: F.14 2N3921 - 2N3922, 2N4084, 2N4085, SU2365 - SU2369, SU2080, SU2081PRODUCT CATALOG Ip (may Ytg (mS) 0 COMMON DRAIN-SOURCE CHARACTERISTICS 10 20 30 40 VDS-DRAIN-SOURCE VOLTAGE-V TRANSADMITTANCE/CUT-OFF VOLTAGE VS DRAIN CURRENT 2.0 5.0 7.0 IDSS-DRAIN SATURATION CURRENT-mA N-CHANNEL DUAL JUNCTION FET CHIP TYPES MMINI 13.3 DRAIN CURRENT VS GATE-SOURCE VOLTAGE < E 2 50 0 0.5 -1.0 1.5 2.0 2.5 VGS-GATE-SOURCE VOLTAGE-VOLTS FORWARD TRANSADMITTANCE VS. DRAIN CURRENT 5.0 4 / i? / 40 y ; 4 / st7 2 2 or oO a MY, 3.0 7 4 AFH - Bo / > & / 4 > 4 J a 20 5 | Yl 7 4 Vv 4 17 1.0 P oo 14] | zy) | Ap ~ . 0 10 0.01 0.05 0.1002 051020 50 10 1D-DRAIN CURRENT-mA E-15__PRODUCT CATALOG N-CHANNEL MOS FET PMN Die Size: 21x23 (mila) 0.530 x 0.534(mils) Pad Size: 4x4 (mils) BODY-SUBSTRATE O 023" {0.581mm) CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bypss 25 30 Vv Ip = +10 pA, Vas = 0, Vas = 0 Ipss 10 500 pA Vps = +15V, Vas = 0, VBs = 0 Gis 1000 2500 4000 pmho Vps = +15V, Ip, = 2mA, f = 1KHz Igss 0.1 10 pA Vas = +40V, Vps = 0 DS(on) 60 195 Q Vps = 20V, Ip = 10mA, Vgs = 0 VGscTh) +.5 +15 +5.0 Vv Vps = +15V, Ip = +10mA, Vgs = 0 Cysg 1.0 1.3 pF Vps = +15V, Ip = +10mA, , f = IMHz Ciss 4.5 5 pF Vps = +15V, Ip = 10mA, f = 1KHz TYPICAL DEVICE TYPES: E-16 3N169, 3N170, 3N171Rpsony(ohms) Ipma) 200 180 160 140 120 100 80 60 40 20 50 45 40 35 30 25 20 -60 -40 PRODUCT CATALOG N-CHANNEL MOS FET CHIP TYPE FMN1.1 DRAIN-TO-SOURCE RESISTANCE vs TEMPERATURE Vas TRANSCONDUCTANCE(mmhos) 20 O 20 40 60 80 100 120 140 TEMPERATURE-(C) DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE Ip(mA) 10 50 45 40 35 30 25 20 TRANSCONDUCTANCE vs GATE-TO-SOURCE VOLTAGE Vos = 10V DRAIN CURRENT vs GATE-TO-SOURCE VOLTAGE Vos = 10V E-17PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET CHIP NUMBER PIMIINT 2 Top Contact: > 12,000 CONTACT METALLIZATION A Aluminum It is advisable that: (0.594mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS a) the die be eutectically mounted with gold silicon preform 98/2%. Die Size: 21x23 (mils) 0.533 x 0.584(mm) 5 . . . Pad Size 4x4 (mil b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. BODY-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByDSss 20 33 Vv Ip = 1.0uA, Vas = 0, Vag = 0 Ipss 01 10 nA Vps = 10V, Vas = 0, VBag = 0 Iass 0.2 5 pA VGB = +25V, Vpp, = Usp = 0 VTH 0.1 1.0 2.5 Vv Vps = Ves = Vtu. Ip = 1A gts 8.0 10 ms Vps = 10V, Ip = 20mA, f = 1KHz Rps 70 100 Q Ips = 0.1lmA, Vag = 5.0V Ciss 45 pF Vps = 15V, Ip = 20mA, f = 1MHz Coss 13 pF Vps = 15V, Ip = 20mA, { =1MHz Cyrsg 1.2 pF Vps = I5V, Ip = 20mA, f = 1MHz E-18Ip (ma) Ip (ma) 100 90 80 70 60 50 40 30 20 10 100 90 80 70 60 50 40 30 20 0 1 PRODUGT CATALOG N-CHANNEL ENHANCEMENT MOS FET CHIP TYPE FMN1.2 DRAIN CURRENT VS DRAIN-TO-SOURCE RESISTANCE DRAIN-TO-SOURCE VOLTAGE VS TEMPERATURE 100 Vag = 10V 90 30 70 2 = 60 o = 50 S 8 40 a . 30 20 10 0 2 3 4 5 6 7 8 9 10 60 -40 -20 0 20 40 60 80 100 120 140 Vos) TEMPERATURE -(C) DRAIN CURRENT VS TRANSCONDUCTANCE VS GATE-TO-SOURCE VOLTAGE GATE-TO-SOURCE VOLTAGE TRANSCONDUCTANCE (umhos) Vast) E-19PRODUCT GATALOG N-CHANNEL ENHANCEMENT DMOS FET CHIP NUMBER 0 CONTACT METALLIZATION Rn) oo1 Top Contact: > 12,000 = A Aluminum 020" (0.0mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 020" nn > (0.506mm) It is advisable that: Die Size: 20x20 (mils a) the die be eutectically mounted with gold silicon preform 98/2%. 0.508 x 0.508(mm) 4x4 (mils) b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 0.102 x 0.102(eam} BODY-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByDSss . 20 33 Vv Ip = 1.04, Vas = 0, Vag = 0 Ipss 01 10 nA . Vps = 10V, Vas = 0, Vag = 0 Iess 1 100 pA Vep = +25V, Vpp, = VsB = 0 VTH 0.1 1.0 2.5 Vv Vps = Vas = VtH, Ip = 1A gts 10 15 ms Vps = 10V, Ip = 20mA, f = 1KHz Rps 50 70 Q Ips = 0.1lmA, V@s = S.0V Cigs 3.6 pF Vps = 15V, Ip = 20mA, f = 1MHz Coas 1.3 pF Vps = 15V, Ip = 20mA, f =1MHz | Cras | 0.35 pF Vps = 15V, Ip = 20mA, f = 1MHz TYPICAL DEVICE TYPES: SDF9210, SDF9212, SDF9214, SDF8200, SDF8202 E-20PRODUCT CATALOG (Iip} mA N-CHANNEL ENHANCEMENT DMOS FET CHIP TYPE FMNSS.3, FMNZ35.8 FORWARD TRANSCONDUCTANCE THRESHOLD VOLTAGE VS ORAIN CURRENT VS VS DRAIN CURRENT SOURCE-TO-SUBSTRATE VOLTAGE GATE-TO-SOURCE VOLTAGE a 40 40 2 s / 8 3 2 20 z 2 6 0 { 2 0 0 1 20 0 5 10 15 20 25 0 +3 +2 +3 +4 +5 (Ip) ma SOURCE-TO-SUBSTRATE VOLTAGE (Vgg) VOLTS GATE-TO-SOURCE VOLTS (Vag) DRAIN CURRENT VS ORAIN CURRENT VS DAAIN-TO-SOURCE RESISTANCE VS DRAIN-TO-SOURCE VOLTAGE GATE-TO-SOURCE VOLTAGE GATE-TO-SOURCE VOLTAGE x a \ X \ N \ + 5 Laney N t > | s a 20 \ ~ ~ ~*~ ~ ~ ~~ oo 10 5 20 25 4 DRAIN-TO-SOURCE VOLTS (Vpg) GATE-TO-SOURCE VOLTAGE (Vgg) VOLTS GATE-TO-SOURCE VOLTAGE (Vgg) VOLTS. DAAIN-TO-SOUACE RESISTANCE THRESHOLD VOLTAGE VS TEMPERATURE VS TEMPERATURE 100 (Rpg on) {Vy} VOLTS 2 o8 06 o4 0.2 + + + + +90 +110 +130 Q 70 50 30 10 +10 + +50 + +90 +110 +130 AMBIENT TEMPERATURE (Ta) C AMBIENT TEMPERATURE (Ta) C E-21PRODUCT CATALOG N-CHANNEL ENHANCEMENT DMOS FET PMINGSS. (0.508mm) Die Size: 20x20 = (mils) 0.506 x 0.508(m:m) 4x4 (mils) Pad Size: 0.102 x 0.102{mm)} BODY-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByDss 20 33 Vv Ip = 1.0u4, Vag = 0, Vag = 0 Ipss 0.01 10 nA Vps = 10V, Vas = 0, Vas = 0 igss 0.01 1 nA Vas = 10V, Vas = VED = 0 VTH 0.1 1.0 2.5 Vv Vps = Vas = Vrn, Ip = WA gis 10 15 mmho Vps = 10V, Ip = 20mA, f = 1KHz Rps 50 70 Q Ips = 0.1mA, V@s = 5.0V Ciss 3.6 pF Vps = 15V, Ip = 20mA, f = 1MHz Coss 1.3 pF Vps = 15V, Ip = 20mA, f =1MHz Cres 0.35 pF Vps = 15V, Ip = 20mA, f = 1MHz TYPICAL LiVICE TYPES: SDF9210, SDF9212, SDF9214, SDF8200, SDF8202 E-22PRODUCT CATALOG N-CHANNEL ENHANCEMENT DMOS FET CHIP TYPE FMNZ35.3, FMNS35.3 FORWARD TRANSCONDUCTANCE THRESHOLD VOLTAGE VS DRAIN CURRENT VS S DRAIN CURRENT SOURCE-TO-SUBSTRATE VOLTAGE GATE-TO-SOURCE VOLTAGE 40 . y we / g tn = . 3 / 10 7 0 A 5 10 15 20 25 0 +1 +2 +3 +4 +5 (ip) ma . _ SOURCE-TO-SUBSTRATE VOLTAGE {Vgg) VOLTS GATE-TO-SOURCE VOLTS (Vgg) DRAIN CURRENT VS DRAIN CURRENT VS : : DRAIN-TO-SOURCE RESISTANCE VS. - ORAIN-TO-SOURCE VOLTAGE GATE-TO-SOURCE VOLTAGE GATE-TO-SQUACE VOLTAGE 40 10 | v t yn \ I / \ , | v woe e+-* + ' t . |n i : s > 6 t 5 7 pee NS i bi 109 3 ae 3 a 1 20 = = 7 15) ~ go. 4 t ~ ~~ 4 10 ! 2 t ' . : / 1 . : a a a) 10 5 20 2 o 6 t 2 3 5 6 : DRAIN-TO-SOURCE VOLTS (Vps) GATE-TO-SOURCE VOLTAGE (Vgg) VOLTS GATE-TO-SOURCE VOLTAGE (Vgg) VOLTS DRAIN-TO-SOUACE RESISTANCE THRESHOLD VOLTAGE : - VS TEMPERATURE / VS TEMPERATURE 100 20 90 18 e0 16 70 14 60 12 =z " : 50 Z 10 40 = o8 30 06 20 o4 10 02 o + +130 + +110 +130 + + + + + + AMBIENT TEMPERATURE (Ta) C AMBIENT TEMPERATURE (Ta) C E-23PRODUCT CATALOG P-CHANNEL ENHANCEMENT MOS FET CHIP NUMBER PMP Die Size: 21x23 (mils) 0.533 x 0.584(mm) Pad Size: 4x4 (mils) BODY-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS It is advisable that: O CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum (0.584mm) Backside Contact: 3,000 A Gold | ASSEMBLY RECOMMENDATIONS a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Byass -35 -40 -60 Vv Ip = 10, nA, Vas = 0, Vas = 0 Ipss 20 500 pA Vps = -15V, Vas = 0, Veg = 0 Os 1000 2500 4000 pmho Vps = -15V, Ip, = 10mA, f = 1KHz Ipfon) -3.0 -30 mA Vps = -15V, Vas = -10V, Vag = 0 IDS 200 350 Q Ves = -20V, Ip =-100uA, Vps = 0 VGSi(th) -2.0 -5.0 Vv Vps = -15V, Ip = -10uA, Vas = 0 Crsg 1.0 pF Vps = -15V, Ip = -10mA, f = 1MHz Cigs 3.5 pF Vps = -15V, Ip = -10mA, f =1MHz n 50 nV/ Hz Vps = -15V, Ip =-10mA, f = 1KHz TYPICAL DEVICE TYPES: 2N4065, 3N163, 3N14, UC1700, UC1702 F.94(Ip) mA (Vos) VOLTS DRAIN CHARACTERISTICS COMMON-SOURCE 10 20 30 40 DRAIN-SQURCE Vpg(V) VOLTS LOW-LEVEL ON DRAIN SOURCE VOLTAGE VS GATE-SOURCE FORWARD BIAS VOLTAGE =-10mA =-0,1MA -4.0 -8.0 -12 -16 GATE-SOURCE FORWARD BIAS (Vgs(f)) VOLTS 50 -20 PRODUCT CATALOG P-CHANNEL ENHANCEMENT MOS FET CHIP TYPE PMP1.1 (Ip) mA (Rpg on) LOW LEVEL DRAIN CHARACTERISTICS 1.0 Vos=- _o8 1 Vgg=-10V +0.2 +0.4 +0.6 +08 +1.0 +0.5 +0.3 +0.1 0 0.1 0.3 0.5 DRAIN-SOURCE (Vps) VOLTS STATIC DRAIN-SOURCE ON RESISTANCE VS GATE-SOURCE FORWARD BIAS 500 100 50 0 ~-40 80 12 16 20 24 28 GATE-SOURCE FORWARD BIAS (Vesif)) VOLTS E-25PRODUCT CATALOG P-CHANNEL ENHANCEMENT MOS FET CHIP NUMBER PMP O CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum (0.564mm) Backside Contact: 3,000 A Gold | ASSEMBLY RECOMMENDATIONS It is advisable that: Die Size: 21223 (mils) a) the die be eutectically mounted with gold silicon preform 98/2%. 0.533 x 0.584(mm) 4x4 (mils) b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 0.102 x 0.102(mm) BODY-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bypss -35 -40 -60 Vv Ip = -10, vA, Vas = 0, Vas = 0 Ipss 20 500 pA Vps = -15V, Vas = 0, Vpg = 0 Sts 1000 2500 4000 ymho Vps = -ISV, Ip, = -l0mA, f = 1KHz Ip(on) -3.0 -30 mA Vps = -15V, Vag = -10V, Vas = 0 IDS 200 350 Q Vas = -20V, Ip = -10QUA, Vgs = 0 VGS(th) -2.0 -5.0 Vv Vps = -15V, Ip = -10,A, Vas = 0 Crss 1.0 pF Vps = -15V, Ip = -l0mA, { = 1MHz Ciss 3.5 pF Vps = -15V, Ip = -l0mA, f = n 50 nV/ Hz Vps = -15V, Ip = -l0mA, f = 1KHz TYPICAL DEVICE TYPES: 3N172, 3N173 E-26(Vpg) VOLTS (Ip) mA Chile VRE FIMPZT LOW-LEVEL "ON" DRAIN SOURCE VOLTAGE VS GATE-SOURCE FORWARD BIAS VOLTAGE Ip=-10mA ip=-0.1mA 0 40 80 12 16 20 GATE-SOURCE FORWARD BIAS (Vggit)) VOLTS DRAIN CHARACTERISTICS COMMON-SOURCE -10 20 30 40 50 DRAIN-SOURCE Vps(V) VOLTS PRODUCT CATALOG P-CHANNEL ENHANCEMENT MOS FET (Rog on) (Ip) mA 1000 500 100 50 +0.2 +0.4 +06 +0.8 +1.0 STATIC DRAIN-SOURCE ON RESISTANCE VS GATE-SOURCE FORWARD BIAS 0 -~40 --80 12 16 20 24 28 GATE-SOURCE FORWARD BIAS (Vgs(f)) VOLTS LOW LEVEL DRAIN CHARACTERISTICS Veg =-10V +05 +0.3 +0.1 0 0.1 0.3 05 DRAIN-SOURCE (Vps) VOLTS E-27PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER PIN Za . i 017 (0.432mm) Die Size: -17x17 (mils) 0.432 x 0.432(mm) 3.54 (mils) Pad Size: 0.089 x 0.102(mm) GATE-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS 2 | 017" CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum 432mm) Backside Contact: 3,000 A Gold It is advisable that: ASSEMBLY RECOMMENDATIONS a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGss ~30 -60 -80 Vv Vps = OV, Iq = lpA Ipss 0.02 0.25 1.0 mA Vps = 10V, Vas = 0 Sts 80 250 350 yzmho Vps = 10V, Vas, = 0 Igss -0.3 -10 pA VGS =-20V, Vps = 0 VGS(off) -0.5 -2.0 6.0 v Vps = 10V, Ip = nA Cyrss 7 0.8 1.0 pF Vps = 15V, Vas = 0, f = 1MHz Ciss 1.7 2.0 2.5 pF Vps = 15V, Vas = 0, f = 1MHz & 45 150 nV/Hz VpG = 10V, Ip = S0pA, f = 100Hz TYPICAL DEVICE TYPES: F.9R 2N4117A, 2N4119A, 2N3452, 2N5902-2N5909PRODUCT CATALOG N-CHANNEL JUNCTION FET ChIP TYPE FN2.2 TRANSFER CHARACTERISTICS TRANSFER CHARACTERISTICS TRANSFER CHARACTERISTICS 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A 100 250 800 Vos = 10V Vps = 1 80 DS 200 DS 600 25C <q 1 60 < 150 * L 2 400 40 100 20 50 200 25C 0 02 04 06 08 -10 -12 0 04 08 12 -16 0 sl 2 3 4 5 VasV Vas--V VesV GATE CURRENT OUTPUT CONDUCTANCE 2N4117A-2N4119A 2N4771-2N4119, 2N4119A-2N4119A -1000 10 -100 < 2 Vps = 10V 2.40 1.0 DS | = S | wo no O mam 1 0.1 0.1 0 10 20 30 40 50 10 100 1000 VoGV IDA GATE CURRENT SHORT CIRCUIT EQUIVALENT INPUT NOISE VOLTAGE 2N4117-2N4119 2N4117-2N4119, 2N4119A-2N4119A -10nA 1000 -1000 100 4 ee 100 & 10 10 10 100 1K 10K FREQUENCYHz Voa--V 100K E-29PRODUCT CATALOG N-CHANNEL JUNCTION FET PIN. .013 (0.737mm) 012" (0.305mm)} Die Size: 12x13 (mils) 0.305 x .0330(mm) 3x3 (mils) Pad Size: 0.076 x 0.076(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGss -25 -35 -50 Vv Vps = OV, Iq = WA Ipss 1.0 10 30 mA Vps = 15V, Vag = 0 Ss 3.0 5.5 7.5 mmho Vps = 15V, V@s, = 0 Igss -5.0 -100 pA Vas =-20V, Vpg = 0 rDS 100 170 500 Q Vps = 100mV, Ves = 0 VGS(off) -0.8 -3.0 8.0 v Vps = 15V, Ip = 1nA Cyrssg 0.6 0.7 0.9 pF Vps = 15V, Vas = 0, f = 1MHz Ciss 3.0 3.5 4.0 pF Vps = 1SV, Vas = 0, = IMHz en 15 nV/ Hz VpG = 15V, Ip = 5,.A, f = 100Hz TYPICAL DEVICE TYPES: E-30 2N4116, 2N3823, 2N3452, 2NS104, 2N5105, UC734, 2N5485PRODUCT CATALOG (ipgg mA) (Ip mA) N-CHANNEL JUNCTI E ChIP TYPE FN2.5 TRANSFER ADMITTANCE VS GATE-SOURCE CUTOFF VOLTAGE TRANSFER CHARACTERISTICS 8000 =15V 7000 Yos= 1 6000 5000 2 = 4000 LB a 3 3000 2000 1000 t 2 3 4 5 6 7 0 4 4 2 3 4 5 6 7 GATE-SOURCE CUTOFF VOLTAGE (Vgg(off) VOLTS GATE-SOURCE VOLTAGE (VGS) VOLTS NORMALIZED FORWARD TRANSFER ADMITTANCE OUTPUT CHARACTERISTICS VS TEMPERATURE 10 8 2 z 6 4 2 9 2 4 6 8 10 12 14 16 18 20 22 24 26 -60 20 0 +20 +60 +100 +140 DRAIN-SOURCE VOLTAGE (Vpg) VOLTS TEMPERATURE C E-31PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER FNS. a i 016 (0.406mm) Die Size: -16 x17 (mils) 0.406 x 0,432(mm) 3x3 (mils) *Pad Size: 0.076 x 0.076(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Byass -30 -50 -70 Vv Vps = 0, Iq = WA Ipss 0.5 8.0 20 mA Vps = 15V, Veg = 0 Sts 1.5 4.0 6.0 mmbho Vps = 15V, Vgs, = 0 Igss 25 100 pA Ves =-30V, Vps = 0 DS 150 200 600 Q Vps = 100mV, Vas = 0 VGS(olf) -1.0 -3.0 8.0 Vv Vps = 15V, Ip = InA Crss 1.2 2.0 3.0 pF Vps = 15V, Ves = 0, f = IMHz Cigs 4.5 6.0 pF Vps = 15V, Vas = 0, f = 1MHz TYPICAL DEVICE TYPES: 2N3821 - 2N3824, 2N3921 - 2N3922, 2NS545 - 2N5547 E-32PRODUCT CATALOG (YpgmS) 'oss (mA) Nn wo 2B nm nD nN @ O N-CHANNEL JUNCTION FET CHIP TYPE FNS.6 FORWARD TRANSADMITTANCE VS. OPERATING DRAIN CURRENT Ry & 2 ce AQ N 012 3 4 5 6 7 8 9Y 10 11 12 13 DRAIN CURRENT Ip(mA) TRANSFER CHARACTERISTICS Vos=1 0 -5 1 -15 2 25 3 35 4 -45 55 (Vas) VOLTS FORWARD TRANSADMITTANCE VS _ Nn Vos= 15V 11 4000 10 9 3000 8 _ 7 2000 8 = 6 & 2 p 2 5 1000 4 3 2 1 0 -1 2 3 4 -5V GATE SQURCE CUTOFF VOLTAGE (Vg off) OUTPUT CHARACTERISTICS Vosg=20V < E wn 2 0 2 4 6 8 10 12 #14 #16 #18 20 Vps (VOLT) E-33PRODUCT CATALOG N-CHANNEL JUNCTION FET PNB. 5 | -015" (0.381mm) Die Size: 15x20 (mils) 0.381 x .0.508({mm) 3x4 (mils) Pad Size: 0.076 x 0.102(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGSS -40 -60 -80 v Vps = 0, Ig = lA Ipss 1.0 12 30 mA Vps = 20V, Vas = 0 Sts 1.0 4.0 6.0 mmho Vps = 20V, Vas, = 0 Iass -10 -100 pA Vas =-30V, Vps = 0 rDS 120 300 1000 Q Vps = 100mV, Vas = 0 VGs(otf) -0.5 -3.0 -8.0 v Vps = 20V, Ip = 1nA Cyss 1.8 3.0 pF Vps = 15V, Ip = 2mA, f = 1MHz Cisg 6 8 pF Vps = 15V, Ip = 2mA, f = 1MHz & 25 50 nV/ Hz Vps = 15V, Ip = 2mA, f = 10Hz TYPICAL DEVICE TYPES: 2N5561 - 2N5563, UC210, UC220, 2N4221, 2N4222 E-34(Ip) mA (Ips) mA 10 8.0 6.0 4.0 2.0 0 OUTPUT CHARACTERISTIC __ PRODUCT CATALOG N-CHANNEL JUNCTION FET CRIP TYPE FINS.S 49 8.0 12 16 20 DRAIN-SOURCE VOLTAGE-(Vpg) VOLTS TRANSFER Vg CHARACTERISTIC Vpg=10V K NS J Ny. NI 6 06 "2 18 2A 3.0 GATE-SOURCE VOLTAGE-(Vgg) VOLTS 'psg (mA) (Yes) ymhos FORWARD TRANSADMITTANCE VS GATE-SOURCE CUTOFF 7000 6000 5000 4000 3000 0 0.6 1.2 1.8 2.4 3.0 GATE-SOURCE CUTOFF VOLTAGE-~(VGS(off))}- VOLTS FORWARD TRANSADMITTANCE 7000 Vag(off)=-2.4V 6000 Gs 5000 4000 3000 2000 1000 0 01 05 0.1 0.5 1.0 5.0 10 DRAIN CURRENT (Ip) mA (Yes) yamhos. E-35PRODUCT CATALOG N-CHANNEL JUNCTION FET ENG _ ole" (0.457mm) + 023" (0.584mm) ___ Die Size: 18x23 (mils) 0.457 x .0.584(mm) 3x3 (mils) 0.076 x 0.076(mm) Pad Size: GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGSss -30 -50 -70 Vv Vps = 0, Iq = yA Ipss 5.0 60 150 mA Vps = 20V, Vas = 0 GOfs 8 mmho Vps = 20V, Ip, = 2mA Iass -20 -200 pA Vas =-20V, Vps = 0 DS 20 40 100 Q Vps = 100mV, Vag = 0 VG@S(otf) -0.5 -4.5 -10 v Vps = 20V, Ip = 1nA Crss 3.0 3.5 4.0 pF Vps = 15V, Ip = SmA, f = 1MHz Ciss 10 12 16 pF Vps = 15V, Ip = 5mA, f = 1MHz n 7 nV/-Hz Vps = 15V, Ip = SmA, f = 1KHz TYPICAL DEVICE TYPES: 2N4091 - 2N4093, 2N4391 - 2N4393, 2N4856 - 2N4861, KK4391] - KK4393 E-36(Yes) mS (Ips) MA PRODUGT CATALOG N-CHANNEL JUNCTION FET CHIP TYPE FN7.1 SHORT CIRCUIT FORWARD TRANSADMITTANCE VS GATE SOURCE CUTOFF VOLTAGE FORWARD TRANSADMITTANCE Vpsg=20V aN DS Ne? 2 ON No No* BN 012 3 4 5 67 8 9 10 111213 14 (Ip) mA DRAIN CURRENT TRANSFER CHARACTERISTICS Vps=20V oh 2 3 4 5 6 7? 8 9 -10 (Vgg) VOLTS (ipgg) MA (Ipg) mA 150 140 130 120 110 100 90 80 70 60 50 40 30 20 0 Vog=20v 4 2 3 GATE SOURCE CUTOFF VOLTAGE (Vg off) 4 5 6 7 8 9 -10 COMMON SOURCE DRAIN CHARACTERISTICS 2 4 6 8 10. 12 (Vps) VOLT 14 V@g=0V Veg=-0.2V Ves =-0.4V Vag=-0.6V Vag =-0.8V Vgg=-1.0V 16 18 20 (Yes) umhos E-37PRODUCT CATALOG N-CHANNEL JUNCTION FET FN | CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 027" ; (0.686mm) Die Size: 27x30 (mils) 0.686 x .0.762(mm) 4x4 (mils) Pad Size: 0.102 x 0.102(mm) GATE-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. PARAMETER MIN TYP MAX UNIT TEST CONDITIONS ByGess -25 -30 -45 v Vps = 0, IG = lA Ipss 100 400 700 mA Vps = 5V, Vas = 0 (pulse test) Sts 10 mmho VpG = 10V, Ip, = 2mA Ia@ss -50 -500 pA Ves ="15V, Vps = 0 tDS 4.5 6.0 20 Q Vps = 100mV, Vas = 0 VGS(off) -0.5 5.0 12.0 Vv Vps = 5V, Ip = 3nA Crss 12 20 pF VpG@ = 10V, Vpq = 0, 1 = 1MHz Ciss 25 35 pF Vsq = 10V, Vps = 0, = 1MHz en 5.0 nV/~Hz VpG = 15V, Ip = 2mA, f = 10Hz TYPICAL DEVICE TYPES: E-38 2N5432 - 2N5434, SDF1000 seriesTps/tpg*-NORMALIZED RDS CAPACITANCEpF 2.0 1.8 1.6 0.8 0.6 0.4 0.2 80 70 60 50 40 30 20 10 ChIP TYPE FN tpg vs TEMPERATURE | | Vos = 0 Ves = 0 A Tps = tps WHEN T = 25C t i a | 75 50 -25 O 25 50 75 100 125 150 175 TTEMPERATUREC CAPACITANCE vs VasiVp Vos = 0 | f= 1MHZ_| \ T = 25C h K \ | Ciss | PpL___| Criss -0.5 -1.0 -15 -2.0 VasVpVas NORMALIZED TO Vp VpGATE-SOURCE PINCH-OFF VOLTAGEV ID(otfy DRAIN CUTOFF CURRENTpA bo Nooo 10 10 10 10? PRODUCT CATALOG 'N-CHANNEL JUNCTION FET Vp YS (pos \ Vps = 0 \ T = 25C N 3 4 5 678910 tpgDRAIN-SOURCE RESISTANCEOhm ip (OFF) vs TEMPERATURE rl / Vos = 5V Veg = 10V / 75 50 25 O 2 50 75 100 125 150 175 TTEMPERATUREC E-39PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER AN -032" (0.813mm) = | 030 (0.762mm) Die Size: 30x32 = (mils) 0.762 x .0.812%mm) -762 x .813{mils) Pad Size: 0.102 x 0.102(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER TYP MAX. UNIT TEST CONDITIONS Byass - 25 -40 ~ 50 Vv Vps = 0,1Ig = WA Ipss 1000 mA Vps = 15V, Vas = 0 Vp -1.0 -10 Vv Vps = SV, Ip, = 1nA Ron 15 OHms Vas = 0, Ip = l0mA Iass 30 200 pA Vps = 0, Vag = -15V Ciss 28 50 pF Vps = 0, Vas = -10V, f = lmHz Crss 14 25 pF Vps = 0, V@p = 10V, f = 1MHz Sts 120 250 ms Vps = 15V, Vas = 0, f = 1KHz TYPICAL DEVICE TYPES: 2N5432 - 2N5434, series F.40(Ypg-mS) Ip (ma) PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP IVER FN.41 FORWARD TRANSADMITTANCE FORWARD TRANSADMITTANCE VS VS. OPERATING DRAIN CURRENT GATE-SOURCE CUTOFF VOLTAGE 700 80 vi 15V Ds* Vps=>V 600 OS 150 70 140 60 500 130 120 <x 50 = 400 10 2 100 @ 40 8 i = 300 90 30 80 200 70 20 60 100 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Oo 1 2 3 4 6 7 8 9 -10 DRAIN CURRENT Ip(ma) (Vag off) VOLTS TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS 200 Vos =5V 180 160 140 a 120 100 80 60 40 20 4 2 3 4 5 6 7 8 9 -10 0 1 2 3. 4 5 (Vgg) VOLT Vos (VOLT) DRAIN-SOURCE VOLTAGE E-41PRODUGT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER FNZ2. 2 P=. = 016 (0.406mm) Die Size: 13x16 (mils) 0.330 x 0.406(mm) 4x6 (mils) Pad Size: 0.102 x 0.152(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with geld silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN TYP MAX. UNIT TEST CONDITIONS ByGss -40 -60 -80 Vv Vps = 0, Iq = WA Ipss 0.1 3.0 10.0 mA Vps = 20V, Ves = Sts 0.5 1.7 3.0 mmho Vps = 20V, Vas, = IGss -10 -100 pA Vas =-30V, Vps = tDS 300 500 2000 Q Vps = 100mV, Ves = VGS(off) -0.5 -2.5 -6.0 Vv Vps = 20V, Ip = InA Crsg 0.8 1.2 1.8 pF Vps = 20V, Vas = 01, f = 1MHz Cigs 3.0 4.0 5.0 pF Vps = 20V, Vas = 0, f =1MHz en 30 50 nV/ Hz Vps = 20V, Vas = 0, f = 100Hz TYPICAL DEVICE TYPES: F.497 2N3684A, 2N4338, 2N4341, 2N4302 - 2N4304PRODUGY CATALOG N-CHANNEL JUNCTION FET CRIP IYPE FINAA.2. OUTPUT CHARACTERISTICS << a 0 10 26 30 40 50 DRAIN-SOURCE VOLTAGE (Vps) VOLTS TRANSFER CHARACTERISTICS Vos =20V < B 2 09 40 20 30 40 50 60 7.0 GATE-SOURCE VOLTAGE (Vag) VOLTS (lpss) mA (Yeg) umhos TRANSADMITTANCE VS GATE-SOURCE CUTOFF VOLTAGE 3200 2800 2400 2000 8 1600 & 2 > 1200 = B00 400 99 410 20 30 40 50 60 -70 (Vgg off) VOLTS TRANSADMITTANCE VS OPERATING DRAIN CURRENT 2800 2400 2000 1600 1200 800 400 0 or 05 01 0.5 10 5.0 10 DRAIN CURRENT (Ip) mA R.A42PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER PINSO.1 Die Size: 21x22 = (mile) 0.533 x 0.559(mm) 3x3 (mils) Pad Size: 0.076 x 0.076{mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Byass -20 -30 -40 Vv Vps = 0, Ig = vA Ipss 5.0 15 40 mA Vps = 15V, Ves = 0 Sts 4500 8000 12000 pmho Vps = 15V, V@s, = 0 Igss -10 -100 pA Ves =-15V, Vps = 0 rps 100 Q Vps = 100mV, Vas = 0 VGS(off) 5 -3.0 - 8.0 Vv Vps = 18V, Ip = 1nA Cyss 1.0 1.5 pF VpG = 10V, Ip = 10mA, f = 1MHz Cigs 4.0 6.0 pF VpG = 10V, Ip = 10mA, f =1MHz TYPICAL DEVICE TYPES: 2N5397, 2N5398, U257, 2N5911, 2N5912PRODUCT CATALOG N-CHANNEL JUNCTION FET CRIP IrYPE FINS6.1 COMMON SOURCE, SHORT CIRCUIT FORWARD TRANSADMITTANCE ZERO GATE VOLTAGE VS VS OPERATING DRAIN CURRENT DRAIN CURRENT [pgs (mA) 10 9 8 10 9 2 8 7 Q i 7 & i = a = % & : 6 S 5 = 4 5 4 3 012 3 4 5 6 7 8 9 10 11 12 13 14 0 1 2 3 4 5 6 DRAIN CURRENT-Ip mA GATE SOURCE CUT-OFF VOLTAGE (Vag off) TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS 20 19 18 v7 Vps= 10V 16 15 14 13 t 42 E mH 1 Oo S 10 ~ 9 8 7 6 5 4 3 2 1 4 2 3 4 0 +2 +4 46 +8 +10 +12 +14 +16 +18 +20 Veg VOLT (Vps) VOLT E-45PRODUCT CATALOG N-CHANNEL JUNCTION FET FN80.8 | 015 (0.381mm) Die Size: 18x20 (mils) 0.381 x 0.508 mm) 3.5x4.5 (mils) Pad Size: 0.089 x 0.114(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS ByGss -40 -50 -70 Vv Vps = 0, Ig = lA Ipss 0.1 3.0 10 mA Vps = 20V, Vas = 0 fs 0.5 1.8 3.5 pmho Vps = 20V, Vqs, = 0 Iass -10 -100 pA Vas = -30V, Vps = 0 IDS 500 2000 Q Vps = 100mV, Vas = 0 VGS(olf) -2.5 -6.0 a Vps = 20V, Ip = lmA Crgg 2.0 4.0 pF Vps = 20V, Vas = 0, f = 1MHz Ciss 5.0 7.0 pF Vps = 20V, Vas = 0, f = 1MHz en 10 30 nV/.-Hz Vps = 15V, Ip = .2mA, f = 10Hz TYPICAL DEVICE TYPES: E-46 SDFS500 Thru SDF 505, 2N5515 - 2N5524, 2N4867, 2N4868PRODUGT CATALOG N-CHANNEL JUNCTION FET CHIP TVPE FNS9.8 VOLTAGE CHARACTERISTIC NOISE FIGURE 1000 500 200 N Iz 100 3 zie 50 > c 3 S 5 o > 20 ay 3 z a 10 100 1k 10k 100k 100 1K 10K 100K 1M 10M FREQUENCY.--(f)--Hz Rgen(ohms) OUTPUT CHARACTERISTIC FORWARD TRANSADMITTANCE 'pss (Ip) mA (Ipgsg) MA 10 20 30 40 50 4 2 3 4 5 DRAIN-SOURCE VOLTAGE (Vpg) VOLTS Vag (olf) VOLTS E-47PRODUGYT CATALOG N-CHANNEL JUNCTION FET PING Iel 019 , (0.483mm) Die Size: 19x20 (mils) 0.483 x 0.506(mm) 4x3 (mils) Pad Size: 0.076 x 0.076(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Byass -20 -30 -40 Vv Vps = 0, 1g = WA Ipss 10 30 60 mA Vps = 10V, Iq = lA Sts 15 20 mmho Vps = 10V, Ip, = 10mA, f = 1KHz Iass 40 150 pA Vas = -15V, Vps = 0 Ves -1 -5 -8V Vv Vp = 10V, Ip = nA NF 1.5 dB Vps = 10V, Ip = 10mA, # = 100MHz Cga 1.8 2.5 pF Vps = 10V, Ip = 10mA, f = 1MHz Cgs 4.0 5.0 pF Vps = 10V, Ip = 10mA, { =1MHz n 10 20 nV/ Hz Vps = 10V, Ip = 10mA, f = 100Hz TYPICAL DEVICE TYPES: U308 - U311 E-48INPUT ADMITTANCE (mmho) FORWARD TRANSFER ADMITTANCE (mmho) 100 30 10 100 30 100 100 Chie TYPE FN?71.1 INPUT ADMITTANCE * COMMON GATE Se x= E E ray Q Z 10 Et a 06 2 0. L = & > 03 6 0.1 300 600 100 FREQUENCY (MHz) FWD TRANSFER ADMITTANCE* COMMON GATE bo Vps = 10V , Ip = 10mA _ Ta = +25C g = lu oO z xt E = a < 04 a uw ire wy Zz rc e us w ao WwW > WwW rc 01 300 600 100 FREQUENCY (MHz) PRODUCT CATALOG N-CHANNEL JUNCTION FET OUTPUT ADMITTANCE* COMMON GATE 300 600 FREQUENCY (MHz) REVERSE TRANSFER ADMITTANCE * COMMON GATE Vps = 10V Ip = 10mA Ta = 425C 300 600 FREQUENCY (MHz) E-49PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP NUMBER PINGS | 024" (0.610mm) | 019" (0.483mm) Die Size: 19x 24 = (mils) 0.483 x 0.610(mm) 3x4 (mils) Pad Size: 0.076 x 0.102(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS Bya@ss -40 -60 -80 Vv Vps = 0, Ig = WA Ipss 0.2 3.0 10 mA Vps = 20V, Ves = 0 Gis 0.4 2.5 .5 mmho Vps = 20V, Vas, = 0 Rps S00 Q Vps = 100mV, Vas = 0 Veslotf) -2.0 4.5 Vv Vps = 20V, Ip = 1nA Cres 3.0 5.0 pF Vps = 20V, Ves = 0, f = 1MHz Cisg 15 20 pF Vps = 20V, Vas = 0, f =1MHz en 7 30 nV/~Hz VpG = I5V, Ip = .2mA, = 10Hz Gos 1.0 5 pmho Vps = 20V, Vas = 0, f = 1KHz TYPICAL DEVICE TYPES: 2N4869, 2N5592-2N5594 E-50(Ip) mA {ipgs) MA PRODUCT CATALOG N-CHANNEL JUNCTION FET CHIP iTrYPE FINSS.8 OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS 5 Vo5=20V Vps=20v (Ilpgg) mA 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1, 15 2. 25 3 3.5 (Vps) VOLTS GATE-SOURCE (Vgs) VOLTS FORWARD TRANSADMITTANCE VS FORWARD TRANSADMITTANCE 48 DRAIN CURRENT (Yes) mS (Yes) mS 0 a 2 : GATE SOURCE CUT-OFF VOLTAGE V@g (off) 3 4 5 E-51 _.PRODUGY CATALOG P-CHANNEL JUNCTION FET FP 6.8 : 018 (0.381mm) Die Size: 15x20 (mils) 0.381 x 0.508&mm) 3x4 (mils) Pad Size: 0.076 x 0.102(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS BYGSS 30 40 50 Vv Vps = 0,Ig = lA Ipss 0.5 8.0 20 mA Vps = 20V, Vas = 0 Ofs 4000 pmho Vps = 20V, Vas, = 0 Iass 30 200 pA Ves = 20V, Vps = 0 rps 300 Q Vps = 100mV, Ves = 0 VGS(olf) 1.0 2.5 8.0 Vv Vps = 20V, Ip = InA Cres 1.8 2.5 pF Vps = 20V, Ves = 0, f = 1MHz Ciss 7.0 9.0 pF Vps = 20V, Vas = 0, = 1MHz TYPICAL DEVICE TYPES: UC400, UC410, UC420, 2N2607, 2N2608, 2N2609, 2N2842, 2N2844 E-52(Yes) mS {Ipgg) mA Ny oO Fn nwnwn 6 OO PRODUGT CATALOG P-CHANNEL JUNCTION FET GHP TYPE PPS..% FORWARD TRANSADMITTANCE VS OPERATING DRAIN CURRENT TRANSFER CHARACTERISTICS es wo Vps=-20V > oe oO = (lpg) mA No FO ODN @& 01 234 5 6 7 8 10 tt 12 13 14 60 5 1 15 2 25 3 35 4 45 DRAIN CURRENT Ip (mA) GATE-SOURCE VOLTAGE (Ves) FORWARD TRANSADMITTANCE VS GATE-SOURCE CUTOFF VOLTAGE OUTPUT TRANSFER CHARACTERISTICS Vos= -20V Vos= Vgg =0V Vasg= +0.5V (Ygg) umhos Vasg= +1.0V (Ip) mA Vas= +1.5V Vas= +2.0V Vas= +2.5V c 1 2 3 4 5 6 0 2 4 6 8 -10 -12 -14 -16 -18 GATE-SOURCE CUTOFF VOLTAGE Vg (off) (Vps) VOLTS -20 E-53PRODUGT CATALOG P-CHANNEL JUNCTION FET EP 7.8 Die Size: 29x23 = (mils) 0.737 x 0.584{mm) 3x3 (mils) Pad Size: 0.076 x 0.076(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. MAX. UNIT TEST CONDITIONS ByGSS 40 50 V Vps = 0, 1G = WA Ipss -30 -120 mA Vps = -15V, Vas = 0 Ofs 10 mmho Vps = -15V, Vgs, = 0 Iass 50 500 pA Vas = 20V, Vps = 0 Ips 100 200 Q Vps = 100mV, Vas = 0 VGS(off) 4.0 10 Vv Vps =-15V, Ip = 1nA Crs 45 pF Vps = 0, Vas = 10V, f = 1MHz Cigs 20 25 pF Vps =-15V, Vas = 0, f = IMHz TYPICAL DEVICE TYPES: 2NS018, 2NS019, 2N5114 - 2N5116, 2N5319 E-54(Yes) ms pgs (mA) FORWARD TRANSADMITTANCE VS. OPERATING DRAIN CURRENT =-20V Ip(mA) FORWARD TRANSADMITTANCE 2 3 4 5 6 7 8 (Vgg OFF) VOLTS GHIP TYPE FP7.3 4 2 8 20 an 2 _ & Z 2 Oo g < 10 oo -2 =4 PRODUCT CATALOG B-CHANNEL JUNCTION FET TRANSFER CHARACTERISTIC 4 (Vgg) VOLT OUTPUT CHARACTERISTICS -6 -8 -10 -12 -14 -16 -18 -20 (Vpg) VOLTS E-55PRODUCT CATALOG P-CHANNEL JUNCTION FET CHIP NUMBER rP22, Die Size: 13216 (mils) 0.330 x 0.406(mm) 4x6 (mils) Pad Size: 0.102 x 0.152(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS BvGss 40 55 Vv Vps = 6, Iq = WA Ipss 0.1 6 mA Vps =-15V, Vas = Vp 0.5 6 Vv Vps =-15V, Ip, = InA Iass 20 100 pA Vps = 0, Ves = 30V Gm 0.2 1 2 ms Vps =-15V, Vas = 0, = 1KHz Ciss 4 5 pF Vps =-15, Vas = 0, = 1MHz Cyss 0.9 1.5 pF Vps =-15V, Vas = 0, f = 1MHz TYPICAL DEVICE TYPES: 2N2606 - 2N2608, 2N3376, 2N3378, 2N3695 - 2N3698 E-56PRODUCT CATALOG Ip DRAIN CURRENTma 24 2.0 1.6 0.8 0.4 CHIP TYPE FRP22.2 TYPICAL OUTPUT CHARACTERISTICS Ta = 25C Ves = 0.2V +1 +1. + +1.8V 40-15-20 25 -30 BYpes Vps-DRAIN-SOURCE VOLTAGEV 9fs TRANSCONDUCTANCEymhos 2400 2000 1600 1200 800 400 TYPICAL TRANSFER P-CHANNEL JUNCTION FET TRANSCONDUCTANCE vs GATE-SOURCE VOLTAGE Ta = 25% Vos = 5V f = Ike N Ipss (max) unit Ipsg (typ) u unit \ K vo \] \ \ Vp (min) | (max) CHARACTERISTICS WITH TEMPERATURE 20 25 30 35 40 Va@sgGATE-SOURCE VOLTAGEV 28 Vos = -5V 24 os F 20 e \ z x 16 3 \ Ta = 55C z \ <2 Loos 25C NY KX 0.4 Ta = 150C WN | . ve | 0 9 04 O8 12 16 #20 24 26 VggGATE-SOURCE VOLTAGEV E-57PRODUCT CATALOG __ ; N-CHANNEL DUAL JUNCTION FET CASCODE CONTACT METALLIZATION Top Contact: > 12,000 a: - i ir T _ Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ _ (0.686mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. Die Size: 27x29 = (mils) 0.686 x 0.737(mm) . 4x4 (mils) b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 0.102 x 0.102(mm) GATE-SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP MAX. UNIT TEST CONDITIONS BYGSS - 40 - 50 Vv Vps = 0, 1g = -lWA Ipss 30 500 pA Vps = 10V, Vas = 0 Ig 0.05 1 pA Vps = 10, Ip, = 30pA Vp -0.6 -4.5 v Vps = 10, Ip = 1nA ts 40 150 ys Vps = 10, Ip = 30vA yOs 0.05 1 ps Vps = 10, Ip = 30uA Ciss 4 pF Vps = 10, Ip = 30uA Crs 0.5 pF - Vps = 10, Ip = 30vA TYPICAL DEVICE TYPES: SDFS30 - SDF537 E-58PRODUCT CATALOG SOLITRON POWER MOS FET CONTACT METALLIZATION Top Contact: 22,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the chip be eutectically mounted with gold silicon preform 98/2%. Die Size: 51x51 (mils) b) 8 mil aluminum wire be ultrasonically attached to the top contact. 1,291.29 (mm) Pad Size: 20x40 (mil) 0.51x1.02 (mm) CHIP NUMBER Top Contact: 22,000 = = 4 A. Aluminum Backside Contact: 3,000 A Gold Otome ASSEMBLY RECOMMENDATIONS | It is advisable that: <i2.ammy a) the chip be eutectically mounted with gold silicone preform 98/2%. Die Size: 96x96 (mils) b) 8 mil aluminum wire be ultrasonically attached to the top contact. Pad Size: 24 8 hae 0.51x1.02 (mm) E-59PRODUCT CATALOG SOLITRON POWER MOS FET CHIP NUMBER sfiigen CONTACT METALLIZATION Top Contact: 22,000 A Aluminum Backside Contact: 3,000 A Gold 109 MILS (2.76mm) | ASSEMBLY RECOMMENDATIONS v . . It is advisable that: a) the chip be eutectically mounted with gold silicon preform 98/2%. Die Size: 20x40 (mils) 0.51x1.02 (mm) b) 8 mil aluminum wire be ultrasonically attached to the top contact. Pad Size: 111x169 (mils) 2.81x2.76 (mm) CHIP NUMBER Die Size: 261 x 261 (mils) 6.63 x 6.63 (mm) Pad Size: 60 x 40 (mils) 1.524 x 1.016 (mm) CONTACT METALLIZATION Top Contact: 22,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the chip be eutectically mounted with gold silicon preform 98/2%. b) 8 mil aluminum wire be ultrasonically attached to the top contact. E-60