% 2N/PN2904A h 2N/PN2905A PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP silicon T0-92A planar epitaxial transistors. It is intended [ for high speed medium power switching and | general purpose amplifier applications. Ee EBC 2N2904A PN2904A ABSOLUTE MAXIMUM RATINGS 2N2905A PN2905A Collector-Base Voltage VcCBO 60V 60V Collector-Emitter Voltage VcEO 60V 60V Emitter-Base Voltage VEBO 5V SV Collector Current Ic 600mA ss 600mA Total Power Dissipation @ TAE25 C Ptot 600mW 500mW @ T c25 C SW 1.2W Operating Junction & Storage Temperature Tj,Tstg -65 to +200C -55 to +150C a. - 0 ELECTRICAL CHARACTERISTICS @ Ty=25 G (unless otherwise staped) : PARAMETER syMBoL [MIN MAK MIN MAX mre TEST CONDITIONS | Collector-Base Cutoff Current Topo 107)" 10 | nA | Voge50 Eyre | Collector-Base Cutoff Current lego 10 10 | uA | Vop=50V Ipe0 o . Ty=150 C Collector Cutoff Current lorx 50 50] nA | Voge30V ga70-5 : Base Cutoff Current | Ip 50 50 | nA Vogt 30V v BE =O. 5V Sl Collector-Fmitter Saturation Ven(sat ) 1.6 1.6 V 1,e500mA I | _r50mk hd Voltage e Collector-Emitter Saturation Vor(sat ) : 0.4 0.4 V T= 150mA . Voltage . Base-Emitter Saturation Voltage VBE (sat ) 1.3 1.3 Vv Tnl50mA 7 . t ... fease-Enitter Saturation Voltage VeE(sat ) 2.6 . 2.6 V 17 500mA oe ~ |p.c. Current Gain h LO 75 7 T=0.lmA V = l0V MICRO ELECTRONICS LID. 32 ta PRA 5) 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro HX. P.O. Box$9477, Kwun Tong. Tel: 3-430181-6 3*893983-3*892423;-S898224- FAX: 3 410321a PNVPNI904 A 2N/PN2905A oo PARAMETER SYMBOL | MIN MAX| MIN MAX | UNIT | TEST CONDITIONS D.C. Current Gain hep 40 100 Ig=ima Vop7 Lov D.C. Current Gain hep 40 100 T= lOmaA Vog lov : D.C. Current Gain hep 40 120; 100 300 Tgel50mA Vog=10V D.C. Current Gain hep 40 50 T=500mA Vggr lov Output Capacitance Cob 8 8 | pF Vopr lov 1,=0 . f=1MHz Input Capacitance Cib 30 30] pF |Vgge2V Ipe0 : f=1MHz High Frequency Current Gain hee 2. 2 Vox20V Tg=50ma q f=100MHz > 7 SWITCHING CHARACTERISTICS : PARAMETER SYMBOL MIN TYP MAX UNIT | TEST CONDITIONS Delay Time tg 6 10 | nsec ! . Tgri5Qma Tn l5ma Rise Time t, 15 40 |nsec Vn30V Turn-On Time t on 21 45 |nsec Storage Time t | 60 80 | nsec 4 Be 8 Tgr150mA Fall Time t 20 20 | nsec f = = T,)7Tp7 toma Turn-Off Time tore 80 100 | nsec V.=6V C - -