TECHNICAL DATA POWER TRANSISTOR Silicon n-p-n type used in a wide variety of high-power switching and ( aroplifier applications in industrial and 2 NI 48 8 military equipment. It is used in power E B switching, de-to-de converter, inverter, chopper, solenoid and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits; and as a class A or class B push-pull audio and servo amplifier. It features low saturation resistance, high current and power clissipation, high beta at high current, and excellent high- temperature performance. Package is similar to JEDEC No. TO-3; outline 23, Outlines Section. This type is identical with type 2N1490 except for the following: CHARACTERISTICS in Common-Emitter Circuit DC Forward Current-Transfer Ratio (with collector-to-emitter volts = 4 and collector amperes = 1.5) be eee eet e eee eee 15 to 45 DC Collector-to-Emitter Saturation Resistance (with collector amperes = 1.5 and base ma = 300)........ 0c ccc cee cece erent teres 2 max ohms POWER TRANSISTOR Silicon n-p-n type used in a wide variety of high-power switching and ( amplifier applications in industrial and 2 Ni 48 9 military equipment. It is used in power E B switching, dc-to-de converter, inverter, chopper, solenoid and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits; and as a class A or class B push-pull audio and servo amplifier. It features low saturation resistance, high current and power dissipation, high beta at high current, and excellent high- temperature performance. Package is similar to JADEC No. TO-8; outline 23, Outlines Section. This type is identical with type 2N1490 except for the following: MAXIMUM RATINGS COLLECTOR-TO-BASE VOLTAGE (with emitter open)...........2+ccccerene 60 max volts COLLECTOR-TO-EMITTER VOLTAGE! With emitter-to-base volts == LB... 0... cece eee eee teen eens 60 max volts With base open.............-.-005 weeeeeee Dee teeee ecw eee e ees 40 max voits CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (with emitter-to-base volts = 1.5 and collector ma == 0.5). 0.00.00... cece cee eee eens 60 min volts Collector-to-Emitter Sustaining Voltage (with collector ma = 100 and base current = 0)... 0.0... cece cect erent eeeneeceeers . 40 min volts POWER TRANSISTOR Silicon n-p-n type used in a wide variety of high-power switching and amplifier applications in industrial and 2 Ni 490 military equipment. It is used in power switching, dc-to-de converter, inverter, chopper, solenoid and relay control circuits; in oscillator, regulator, and pulse-amplifier circuits; and as a class A or 219RCA TRANSISTOR MANUAL class B push-pull audio and servo amplifier. It features low saturation resistance, high current and power dissipation, high beta at high current, and excellent high- temperature performance. Package is similar to JEDEC No. TO-8; outline 23, Outlines Section. MAXIMUM RATINGS COLLECTOR-TO-BASE VOLTAGE (with emitter open).......0.. 00sec een eee 100 max volts COLLECTOR-TO-EMITTER VOLTAGE: With emitter-to-base volts = 1.5. 100 maz volts With base open.........00..0... 2000000200 see . 55 max volts EMITTER-TO-BASB VOLTA GE (with collector open).......... 10 max volts COLLECTOR CURRENT. 0.0.0... 0. cece eee eee rn . 6 max amperes EMITTER CURRENT. ..... 2.0.0.0... 00000 ev eee : -8 max amperes BASE CURRENT. 20.00. ee ee eee tte tne nee ene 3 max amperes TRANSISTOR DISSIPATION: At mounting-flange temperatures up to 25C... 2... cee eee 75 max watts At mounting-flange temperatures above 25C... 2... oe eee See curve page 68 TEMPERATURE RANGE: Operating (junction) and. storage. ... 1... cece eee eee net eee 65 to 200 C CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (with emitter-to-base volts = 1.6 and collector ma = 0.5)........ 0.00200 2c cece eee 100 min volts Collector-to-Emitter Sustaining Voltage (with collector ma = 100 and base current = 0)... 00.0000 cece teenies 55 min volta Base-to-Emitter Voltag: (with collector-to-emitter volts = 4 and collector amperes 1.6). .00.0 0... 8.5 max volts Collector-Cutoff Current (with eollector-to-base volts = "80 and emitter current == 01.0.0 .0 00 cc ee eens 25 max Ba Emitter-Cutoff Current (with emitter-to-base volts = 10 and collector current OO}... 0.6 ce eee ete een nenaee 25 max ua Thermal Resistance: Junction-to-mounting~flange.......0 0. teens 2.33 max C/watt Thermal Time Constant... 00... 20. teen eee 12 msec In Common-Base Circuit Small-Signal Forward-Current-Transfer-Ratio Cutoff Frequency (with collector-to-base volts = 12 and collector ma = 100)........... 1 Me Collector-to-Base Capacitance (with cotlector-to-base volts = 40 and emitter current = O).. 0.00. eee eee eee bene eens 200 pt In Common-Emitfer Circuit DC Forward Current-Transfer Ratio (with collector-to-emitter volts = 4 and collector amperes = 1.5)... 0020000000 0c ee eee eee 25 to 75 Collector-to-Emitter Saturation Resistance (with collector amperes = 1.5 and base ma == 800)....... 00.0. ecw eee ee ne een eeees 0.67 max ohm TYPICAL BASE CHARACTERISTICS 300 1 1 [fi tree 2490 iif COMMON-EMITTER TB; 250 CIRCUIT, BASE INPUT.4 l, on / }| COLLECTOR-TO-EMITTER __ a th VOLTS= 4 Re Tao w200 Thy MOUNTING-| Ba = if FLANGE R = 50 i fp. CURVE | TEMP. -C ) = I ~ " 2. Vea | --- - o 100 7 pop 200 | i }i 50 fp Zi : 8.5 volts ud. 5 = 12 volrs 0 O5 U5. 2 Ri = 50 ohms, 1 watt BASE- -JO-EMITTER VOLTS Re = 30 chms, 1 watt 92cs-l045IT2 Rs = 7.8 ohms, 2 watts TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT ABOVE DC Collector Supply Volcage (Vcc)... 0... ec eae 12 IDC Base Supply Voltage (Vis)... 6. eee eee et eee eee eens 8.5 220 92CS~10427R2 volts volts