PRELIMINARY
MBR3030CT thru 3060 CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60H z, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURE S
Me tal of silicon rectifier,ma jority carrie r conducton
Guard ring for transient protection
Low p ower loss, high efficienc y
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,hig h frequency inverters,free
wh elling ,and polarity pro tectio n applications
MECHANICA L DATA
Case : TO-220AB m olded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR
3030 CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
30
200
T
J
Operating Temperature Range
-55 to +150
T
STG
Storage Tem perature Range
-55 to +175 C
Typical Thermal Resistance (Note 3)
R
0JC
2.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage (Note 1)
0.70
V
Voltage Rate of Chang (Rated VR)
T
J
=125 C
T
J
=25 C
I
F
=30A @
I
F
=15A @
I
F
=30A @
dv/dt 10000
0.72
0.84
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.2
40
mA
T
C
=100 C
V/us
MBR
3035 CT
35
24.5
35
MBR
3040CT
40
28
40
MBR
3045CT
45
31.5
45
MBR
3050CT
50
35
50
MBR
3060CT
60
42
60
0.80
0.85
0.95
T
J
=25 C
1.5
TO-220AB
All Dimensions in millimet er
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67 9.6 5
2.54 3.43
6.86 5.8 4
8.26 9.28
- 6.35
12.70 14.73
0.5 1 2.79
N
M
L
K
J
I 1.14
2.2 9
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FOR WARD CURRENT
- 30
Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
Typical Junction Capacitance
per element (Note 2)
C
J
pF
450 400
C
SEMICONDUCTOR
LITE-ON
REV. 2-PRE, 13-Sep-2001, KTHC1 1
PRELIMINARY
RATING A ND CHARACTERI ST IC CURVES
M BR3030CT t hru MBR3060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
50
100
150
200
250
300
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
10
050
40
175
PERCENT OF RATED PEAK REVERSE VO LTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0.001
0.1
1.0
100
10
60 80 100
TJ= 125 C
0.01
TJ= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
30
0
20
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VO LTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS F ORWARD CURRENT ,( A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VO LTAGE , VOLTS
INSTANTANEOUS F ORWARD CURRENT ,( A)
0.1
1.0
10
100
0.1 PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
MBR3030CT ~ MBR3045CT
MBR3050CT ~ MBR3060CT
FIG.5 - TYPICAL JUNCTIO N CAPACITANCE
CA PACIT ANCE , (pF)
RE VE RS E VOLT AGE , VO LTS
10
1100
10000
1000
100 0.1
CASE TEMPERATURE , C
0
MBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CTMBR3030CT ~ MBR3045CT
MBR3050CT ~ MBR3060CT
MBR3030CT ~ MBR3045CT
4
TJ= 25 C, f= 1MHz
REV. 2-PRE, 13-S ep-2001, KTHC11