Absolute Maximum Ratings Values Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 700 / 500 1400 / 1000 20 3000 -40 ... +150 (125) 2500 Class F 40/125/56 V V A A V W C V 500 / 350 1400 / 1000 3600 64 800 A A A A2 s SEMITRANS(R) M Low Loss IGBT Modules SKM 500 GA 124 D Inverse Diode IF = -IC IFM = -ICM IFSM I 2t Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C SEMITRANS 4 Characteristics Symbol Conditions 1) V(BR)CES VGE = 0, IC = 6 mA VGE(th) VGE = VCE, IC = 16 mA ICES Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C IGES VGE = 20 V, VCE = 0 VCEsat IC = 400 A VGE = 15 V; IC = 500 A Tj = 25 (125) C VCEsat gfs VCE = 20 V, IC = 400 A CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 400 A, ind. load RGon = RGoff = 3 Tj = 125 C min. typ. max. Units 4,5 - - - - - 216 - 5,5 - 15 - 2,1(2,4) 2,5(2,8) 150 - 6,5 10 - 1 2,45(2,85) - - V V mA mA A V V S - - - - - - 26 4 2 - 1500 40 5,2 2,6 20 pF nF nF nF nH - - - - - - 100 75 660 82 39 57 600 340 1100 125 - - ns ns ns ns mWs mWs - - - - - - 2,0(1,8) 2,25(2,1) - - 180 52 2,5 - 1,2 3 - - V V V m A C - - - - - - 0,041 0,09 0,038 C/W C/W C/W VCES Inverse Diode 8) VF = VEC VF = VEC VTO rt IRRM Qrr IF = 400 A VGE = 0 V; IF = 500 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 400 A; Tj = 25 (125) C2) IF = 400 A; Tj = 25 (125) C2) GA Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure (NPT-Non punch through-IGBT) * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (12 mm) and creepage distances (20 mm) Typical Applications * Switching (not for linear use) * Inverter drives * UPS Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module 1) 2) 3) 8) Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 2000 A/s, VGE = 0 V Use VGEoff = - 5 ... - 15 V CAL = Controlled Axial Lifetime Technology. Cases and mech. data B 6 - 218 (c) by SEMIKRON 0898 B 6 - 213 SKM 500 GA 124 D M500G124.X LS-1 3500 M500G124.X LS -2 140 W 3000 mWs 120 2500 100 2000 80 1500 60 1000 40 Tj = 125 C VCE = 600 V VGE = + 15 V RG = 3 Eon Eoff 500 20 E Ptot 0 0 0 20 40 60 80 100 TC 120 140 160 C 0 Fig. 1 Rated power dissipation Ptot = f (TC) 600 800 1000 A M500G124.X LS -4 Tj = 125 C VCE = 600 V VGE = + 15 V IC = 400 A mWs Eon 200 400 Fig. 2 Turn-on /-off energy = f (IC) M500G124.X LS-3 250 200 IC 10000 A tp=21s 1000 150 1 pulse TC = 25 C Tj 150 C 100s 100 100 Eoff 1ms 10 Not for linear use 10ms 50 IC E 0 1 0 RG 5 10 15 20 25 1 30 Fig. 3 Turn-on /-off energy = f (RG) 100 1000 10000 V Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M500G124.X LS -5 2,5 10 VCE 2 Tj 150 C 12 VGE = 15 V RGoff = 3 IC = 400 A 10 M500G124.X LS -6 di/dt=1000 A/s 3000 A/s 5000 A/s 8 1,5 Tj 150 C VGE = 15 V tsc 10 s L < 20 nH ICN = 400 A 6 4 allowed numbers of short circuits: <1000 2 time between short circuits: >1s 1 0,5 ICpuls/IC ICSC/IC 0 0 0 200 V CE 400 600 800 Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 214 0 1000 1200 1400 V 200 V CE 400 600 800 1000 1200 1400 V Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 (c) by SEMIKRON M500G124.X LS -8 800 A Tj = 150 C VGE 15V 700 600 500 400 300 200 100 IC 0 0 20 40 60 80 100 120 140 TC 160 C Fig. 8 Rated current vs. temperature I C = f (TC) M500G124.X LS -9 800 M500G124.X LS-10 800 A A 17V 15V 13V 11V 9V 7V 600 17V 15V 13V 11V 9V 7V 600 400 400 200 200 IC IC 0 0 0 1 2 3 V CE 4 V 5 Fig. 9 Typ. output characteristic, tp = 80 s; 25 C 0 1 2 3 4 5 V CE V Fig. 10 Typ. output characteristic, tp = 80 s; 125 C M500G124.X LS-12 800 Pcond(t) = VCEsat(t) * IC(t) A VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) 600 VCE(TO)(Tj) 1,3 + 0,005 (Tj -25) [V] 400 typ.: rCE(Tj) = 0,0020 + 0,000006 (Tj -25) [] 200 max.: rCE(Tj) = 0,0029 + 0,000009 (Tj -25) [] IC +2 valid for VGE = + 15 -1 [V]; IC 0,3 ICnom 0 0 2 V GE Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 4 6 8 10 12 V 14 Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 B 6 - 215 SKM 500 GA 124 D M500G124.X LS-13 20 M500G124.X LS -14 100 ICpuls = 400 A V 18 VGE = 0 V f = 1 MHz nF 16 Cies 600V 14 800V 12 10 10 8 Coes 6 4 C 2 V GE Cres 0 1 0 500 QGate 1000 1500 2000 2500 3000 0 10 Fig. 13 Typ. gate charge characteristic 30 V Fig. 14 Typ. capacitances vs.VCE M500G124.X LS-15 10000 20 V CE nC ns 1000 t doff M500G124.X LS -16 10000 Tj = 125 C VCE = 600 V VGE = 15 V RGon = 3 RGoff = 3 induct. load Tj = 125 C VCE = 600 V VGE = 15 V IC = 400 A induct. load ns tdoff 1000 tdon tr tr t don 100 100 tf tf t t 10 10 0 200 400 600 800 1000 0 A IC 10 15 20 25 30 Fig. 16 Typ. switching times vs. gate resistor RG Fig. 15 Typ. switching times vs. IC M500G124.X LS -17 800 5 RG M500G124.X LS -18 35 VCC = 600 V Tj = 125 C VGE = 15 V mJ A Tj=125C, typ. RG= 3 30 Tj=25C, typ. 600 25 Tj=125C, max. Tj=25C, max. 4 20 6 400 15 10 10 20 200 5 IF E offD 0 0 0 1 VF 2 200 IF V Fig. 17 Typ. CAL diode forward characteristic B 6 - 216 0 3 400 600 800 A Fig. 18 Diode turn-off energy dissipation per pulse 0898 (c) by SEMIKRON M 50 0G1 24 .X LS -1 9 0,1 M 50 0G1 24 .X LS -2 0 0,1 K/W K/W 0,01 0,01 0,001 D=0,50 0,20 0,10 0,05 0,02 0,01 0,0001 single pulse D=0,5 0,2 0,1 0,05 0,02 0,01 0,001 single pulse ZthJC ZthJC 0,00001 0,00001 0,0001 0,001 0,01 0,1 0,0001 0,00001 1 s tp 0,001 M500G124.X LS-22 0,1 A 1 s M500G124.X LS-23 500 VCC = 600 V Tj = 125 C VGE = 15 V RG= 3 A VCC = 600 V Tj = 125 C VGE = 15 V IF = 400 A RG= 3 400 4 4 300 0,01 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f 400 0,0001 tp 300 6 6 10 200 200 10 20 20 100 100 IRR IRR 0 0 0 200 400 600 IF 800 0 2000 diF/dt A Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 4000 6000 8000 A/s Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (diF/dt; RG) M 50 0G1 24 .X LS -2 4 100 RG= C 80 6 3 4 10 400 A 20 60 IF= 600 A VCC = 600 V Tj = 125 C VGE = 15 V 300 A 200 A 40 100 A 20 Qrr 0 0 2000 diF/dt 4000 6000 8000 A/s Fig. 24 Typ. CAL diode recovered charge QRR = f (diF/dt; IF; RG) (c) by SEMIKRON 0898 B 6 - 217 SKM 500 GA 124 D SEMITRANS 4 Case D 59 UL Recognized File no. E 63 532 SKM 500 GA 124 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M1 M2 a w B 6 - 218 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units Values (M6) (M6/M4) Units min. typ. max. 3 27 2,5/1,1 22/10 - - - - - - - - 5 44 5/2 44/18 5x9,81 330 0898 Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 4) Larger packing units of 12 or 20 pieces are used if suitable Accessories B 6 - 4 SEMIBOX C - 1. (c) by SEMIKRON