CMT2N7000
SMALL S
IGNAL MOSFET
2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 1
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
! High Density Cell Design for Low RDS(ON)
! Voltage Controlled Small Signal Switch
! Rugged and Reliable
! High Saturation Current Capability
PIN CONFIG UR ATION
SYMBOL
TO-92
Top View
123
SOURCE
GATE
DRAIN
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number Package
CMT2N7000 TO-92
A BSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V
Drain to Current － Continuous
－ Pulsed
ID
IDM
200
500
mA
Gate-to-Source Voltage － Continue
－ Non-repetitive
VGS
VGSM
±20
±40
V
V
Total Power Dissipation
Derate above 25℃
PD 350
2.8
mW
mW/℃
Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃
Thermal Resistance － Junction to Ambient θJA 357 ℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃
CMT2N7000
SMALL S
IGNAL MOSFET
2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2N7000
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage
(V
GS = 0 V, ID = 10 μA)
V(BR)DSS 60 V
Drain-Source Leakage Current
(VDS = 48 V, VGS = 0 V)
(VDS = 48 V, VGS = 0 V, TJ = 125℃)
IDSS
1.0
1.0
μA
mA
Gate-Source Leakage Current-Forward
(V
gsf = 15 V, VDS = 0 V)
IGSSF -10 nA
Gate Threshold Voltage *
(V
DS = VGS, ID = 1.0 mA)
VGS(th) 0.8 3.0 V
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
RDS(on)
5.0
Ω
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
VDS(on)
2.5
V
On-State Drain Current *
(VGS = 5 V, VDS = 10 V)
Id(on) 60 mA
Forward Transconductance (VDS = 10 V, ID = 200mA) * gFS 100 mmhos
Input Capacitance Ciss 60 pF
Output Capacitance Coss 25
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) Crss 5.0
pF
Turn-On Delay Time td(on) 10 ns
Turn-Off Delay Time
(VDD = 15 V, ID = 500 mA,
Vgen = 10 V, RG = 25Ω, RL = 30Ω) * td(off) 10
ns
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
CMT2N7000
SMALL S
IGNAL MOSFET
2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 3
TYPICAL ELECTRICAL CHARACTERISTICS
CMT2N7000
SMALL S
IGNAL MOSFET
2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 4
PACKAGE DIMENSIO N
TO-92
θ1
L
e
θ
A
b
A1
D
D1
E
A
θ
E
D
L
e
D1
A1
θ1
b
CMT2N7000
SMALL S
IGNAL MOSFET
2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 5
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
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Sales & Marketing
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