BFS17N
Document Number DS32160 Rev. 2 - 2 1 of 6
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BFS17N
NEW PRODUCT
NPN RF TRANSISTOR IN SOT-23
Features
Lead, Halogen, and Antimony Free/RoHS Compliant (No te 1)
"Green" Device (Note 2)
Applications
RF Switch
Mechanical Data
Case: SOT-23
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Product Case Reel size (inches) Tape width (mm) Quantity per reel
BFS17NTA SOT-23 7 8mm 3000
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
E1N = Product type Marking Code
Top View Device symbol Top View
Pin Out
E1N
SOT-23
BFS17N
Document Number DS32160 Rev. 2 - 2 2 of 6
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 11 V
Emitter-Base Voltage VEBO 3 V
Continuous Collector Current IC 50 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation at TA = 25°C (Note 4) PD 330 mW
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C R
θ
JA 380 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
Thermal Characteristics and Derating information
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
Single Pulse
D=0.05
D=0.1
D=0.2
D=0.5
Transient Thermal Impedance
The rmal Re si stance C/W)
Pu lse Width (s) 0 20 40 60 80 100 120 140 160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
Derating Cu rv e
Temperatu re (°C)
Max Po wer Dissip a t ion (W )
BFS17N
Document Number DS32160 Rev. 2 - 2 3 of 6
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V
(
BR
)
CBO 20 V IC = 10µA
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO 11 V IC = 1mA
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 3 V IE = 10µA
Collector Cutoff Current ICBO 0.5 µA
VCB = 10V
Emitter Cutoff Current IEBO 0.5 µA
VEB = 2V
Static Forward Current Transfer Ratio (Note 5) hFE 56 180 I
C = 5mA, VCE = 10V
Collector-Emitter Saturation Voltage (Note 5) VCE
(
sat
)
0.5 V
IC = 25mA, IB = 5mA
Transition Frequency (Note 5) fT 1.4 3.2 GHz IE = 25mA, VCE = 5V,
f = 500MHz
Collector Output Capacitance (Note 5) Cob 0.8 1.5 pF
VCB = 10V, f = 1MHz
Notes: 5. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
BFS17N
Document Number DS32160 Rev. 2 - 2 4 of 6
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Typical Characteristics
0.1 1 10 100
400
500
600
700
800
900
1000
1100
0.0 5.0 10.0 15.0 20.0 25.0 30.0
0
1
2
3
4
0 5 10 15 20
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
012345678910
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.1 1 10 100
0
50
100
150
200
T=-55°C
T=25°C
T=85°C
T=150°C VCE=5V
VBE(ON) (V)
IC Coll e cto r Current (mA)
VCE=10V
VCE=5V
VCE=2V
Tamb=25°C
f=500MHz
fT (MHz)
IC Coll ec tor Current (mA)
VCE=1V
Ta=25°C
f=1MHz
CCB Capacita nce (pF )
VCB Collector-Base Voltage (V)
Ta=25°C
f=1MHz
CEB Capacitance (pF)
VEB Emitte r- Ba se Volta g e (V)
Ten base steps
100μA per step
IC Coll ecto r Current (A)
VCE (V)
T=-55°C
T=25°C
T=85°C
T=150°C
VCE=5V
hFE Gain
I C Collec tor Current (mA)
BFS17N
Document Number DS32160 Rev. 2 - 2 5 of 6
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Package Outline Dimensions
Suggested Pad Layout
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BFS17N
Document Number DS32160 Rev. 2 - 2 6 of 6
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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noted herein may also be covered by one or more United States, international or foreign trademarks.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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