TLP621,TLP621-2,TLP621-4 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP621,TLP621- -2,TLP621- -4 Programmable Controller AC / DC-Input Module Solid State Relay Unit in mm The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in an eight lead plastic DIP, which the TLP621-4 provides four isolated channels in a sixteen plastic DIP. * Collector-emitter voltage: 55 V (min.) * Current transfer ratio: 50% (min.) TOSHIBA 11-5B2 Weight: 0.26 g Rank GB: 100% (min.) Pin Configurations (top view) TLP621-2 TLP621 TLP621-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1: Anode 2: Cathode 3: Emitter 4: Collector 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector TOSHIBA 11-10C4 Weight: 0.54 g 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector TOSHIBA 11-20A3 Weight: 1.1 g 1 2002-09-25 TLP621,TLP621-2,TLP621-4 Current Transfer Ratio Type TLP621 TLP621-2 TLP621-4 Classification *1 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min. Max. Marking Of Classification (None) 50 600 Blank, Y, Y, G, G, B, B, GB Rank Y 50 150 Y, Y Rank GR 100 300 G, G Rank BL 200 600 B, B Rank GB 100 600 G, G, B, B, GB (None) 50 600 Blank, GR, BL, GB Rank GB 100 600 GR, BL, GB *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621-2 (GB): TLP621-2 Made In Japan Made In Thailand UL recognized E67349 *2 E152349 *2 BSI approved 6508, 7445 *3 6505, 7445 *3 SEMKO approved 9735090 / 01 *4 *2 *3 *4 UL1577 BS EN60065: 1994, BS EN60950: 1992 EN60950 (approved is TLP621 only) 2 2002-09-25 TLP621,TLP621-2,TLP621-4 * Option (D4) type VDE approved: DIN VDE0884 / 06.92, certificate no. 68384 Maximum operating insulation voltage: 890 VPK Highest permissible over voltage: 8000 VPK (Note) * When a VIDE0884 approved type is needed, please disignate the "Option (D4)" Creepage distance Clearance Insulation thickness 7.62 mm pich standard type : 6.4 mm (min.) : 6.4 mm (min.) : 0.4 mm (min.) 10.16 mm pich (LF2) type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 3 2002-09-25 TLP621,TLP621-2,TLP621-4 Maximum Ratings (Ta = 25C) Rating Characteritic Symbol Forward current LED Forward current derating TLP621-2 TLP621-4 Unit IF 60 50 mA IF /C -0.7 (Ta > 39C) -0.5 (Ta = 25C) mA /C Pulse forward current IFP 1 (100s pulse, 100pps) Power dissipation PD 100 70 mW PD /C -1.0 -0.7 mW /C Power dissipation derating Detector TLP621 A Reverse voltage VR 5 V Junction temperature Tj 125 C Collector-emitter voltage VCEO 55 V Emitter-collector valtage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW PC /C -1.5 -1.0 mW /C Collector power dissipation derating (1 circuit, Ta 25C) Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Operating temperature range Topr -55~100 C Lead soldering temperature Tsol 260 (10 s) C Total package power dissipation PT 250 150 mW PT /C -2.5 -1.5 mW /C Total package power dissipation derating (Ta 25C) Isolation voltage (Note 1) (Note 1) BVS 5000 (AC, 1min., R.H. 60%) Vrms Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC 5 24 V Forward current IF 16 20 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature 4 2002-09-25 TLP621,TLP621-2,TLP621-4 Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V -- -- 10 A Capacitance CT V = 0, f = 1 MHz -- 30 -- pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 -- -- V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 -- -- V VCE = 24 V -- 10 100 nA VCE = 24 V, Ta = 85C -- 2 50 A V = 0, f = 1 MHz -- 10 -- pF MIn. Typ. Max. Unit 50 -- 600 100 -- 600 -- 60 -- 30 -- -- -- -- 0.4 -- 0.2 -- -- -- 0.4 Min. Typ. Max. Unit -- 0.8 -- pF -- Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Symbol IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS 12 1x10 14 10 5000 -- -- AC, 1 second, in oil -- 10000 -- DC, 1 minute, in oil -- 10000 -- 5 Vrms Vdc 2002-09-25 TLP621,TLP621-2,TLP621-4 Switching Characteristics (Ta = 25C) Characterictic Symbol Rise time tr Fall time tf Turn-on time ton Test Condition Min. Typ. Max. -- 2 -- -- 3 -- -- 3 -- VCC = 10 V, IC = 2 mA RL = 100 Turn-off time toff -- 3 -- Turn-on time tON -- 2 -- Storage time tS -- 15 -- Turn-off time tOFF -- 25 -- RL = 1.9 k (Fig.1) VCC = 5 V, IF = 16 mA Unit s s Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCC 4.5V VCE 0.5V tON 6 tOFF 2002-09-25 TLP621,TLP621-2,TLP621-4 100 100 80 80 Allowable forward current IF (mA) Allowable forward current IF (mA) TLP621-2 TLP621-4 I F - Ta TLP621 60 40 20 0 -20 0 20 40 60 80 100 60 40 20 0 -20 120 Ambient temperature Ta (C) 120 200 100 Allowable collector power dissipation PC (mW) Allowable collector power dissipation PC (mW) 240 160 120 80 40 60 80 100 120 P C - Ta 80 60 40 20 0 -20 0 20 40 60 80 100 0 -20 120 Ambient temperature Ta (C) 3000 Pulse width 100s IFP (mA) 500 Pulse forward current 300 100 50 30 10-3 3 10-2 3 10-1 40 3 60 80 100 120 IFP - DR 3000 1000 3 20 TLP621-2 TLP621-4 Ta = 25C 10 0 Ambient temperature Ta (C) IFP - DR TLP621 IFP (mA) 20 TLP621-2 TLP621-4 40 Pulse forward current 0 Ambient temperature Ta (C) P C - Ta TLP621 I F - Ta Pulse width 100s Ta = 25C 1000 500 300 100 50 30 10 100 3 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR Duty cycle ratio DR 7 2002-09-25 TLP621,TLP621-2,TLP621-4 IF - VF 100 VF / Ta - IF Ta = 25C Forward voltage temperature coefficent VF / Ta (mV /C) Forward current IF (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.4 0.6 0.8 1.0 1.2 1.4 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.6 0.3 VF (V) Forward voltage 1 3 Forward current IFP - VFP Dark current ID (A) IFP (mA) Pulse forward current Ta = 25C 100 50 30 10 5 3 1.2 0.8 1.6 2.0 Pulse forward voltage VFP 100 10-1 10-2 10-3 10-4 0 2.4 10V 5V VCE = 24V (V) 40 IC - VCE Collector current IC (mA) Collector current IC (mA) 50mA 30mA 20mA 15mA PC (MAX.) 20 IF = 5mA 2 4 6 8 50mA 25 60 10mA 160 Ambient temperature Ta (C) Ta = 25C 40 120 80 IC - VCE 80 0 0 IF (mA) 101 Pulse width 10s 500 Repetitive 300 Frequency = 100Hz 0.4 30 I D - Ta 1000 1 0 10 30mA Collector-emitter voltage VCE (V) 20mA 20 15 10mA 10 5mA 5 IF = 2mA 0 0 10 Ta = 25C 40mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) 8 2002-09-25 TLP621,TLP621-2,TLP621-4 IC - IF Ta = 25C VCE = 5V VCE = 0.4V (mA) 50 Collector current IC IC / IF - IF 500 30 Current transfer ratio IC / IF (%) 100 10 Sample A 5 3 Sample B 1 0.5 0.3 300 Sample A 100 Sample B 50 30 Ta = 25C VCE = 5V VCE = 0.4V 10 5 0.3 1 3 Foward current 0.1 30 10 100 IF (mA) 0.05 0.03 0.3 1 3 10 Forward current 30 VCE (sat) - Ta 100 0.20 IF (mA) IF = 5mA Collector-emitter saturation Voltage VCE (sat) (V) IC = 1mA I C - Ta 100 VCE = 5V 30 10mA 5mA 10 0.12 0.08 0.04 0 0 -20 5 40 20 80 60 100 Ambient temperature Ta (C) 3 Switchingtime - RL 1mA 1000 1 0.5 500 IF = 0.5mA 0.3 0.1 -20 0 20 40 60 80 Ambient temperature Ta (C) 100 Switching time (s) Collector current IC (mA) 25mA 50 0.16 Ta = 25C IF = 16mA VCC = 5V 300 tOFF 100 50 ts 30 10 5 tON 3 1 1 3 10 30 Load resistance RL 9 100 300 (k) 2002-09-25 TLP621,TLP621-2,TLP621-4 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 10 2002-09-25