D44H8 / NZT44H8 NPN Power Amplifier Features * This device is designed for power amplifier, regulator and switching circuits where speed is important. * Sourced from process 4Q. C E C B B C E TO-220 Figure 1. D44H8 Device Package SOT-223 Figure 2. NZT44H8 Device Package Ordering Information Part Number Marking Package Packing Method D44H8 D44H8 TO-220 3L Rail NZT44H8 44H8 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value Unit 60 V 8.0 A -55 to +150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation D44H8 / NZT44H8 Rev. 1.1.0 www.fairchildsemi.com D44H8 / NZT44H8 -- NPN Power Amplifier November 2014 Values are at TA = 25C unless otherwise noted. Symbol Max. Parameter Unit D44H8 NZT44H8 Total Device Dissipation 60 1.5 W Derate Above 25C 480 12 mW/C RJC Thermal Resistance, Junction-to-Case 2.1 RJA Thermal Resistance, Junction-to-Ambient 62.5 PD C/W 83.3 C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol V(BR)CEO Parameter Conditions Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0 Min. Max. 60 Unit V ICBO Collector-Base Cut-Off Current VCB = 60 V, IE = 0 10 A IEBO Emitter-Base Cut-Off Current VEB = 5 V, IC = 0 100 A hFE DC Current Gain VCE = 1 V, IC = 2 A 60 VCE = 1 V, IC = 4 A 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 8 A, IB = 0.8 A 1.5 V VBE(on) Base-Emitter On Voltage VCE = 2 V, IC = 10 mA Current Gain-Bandwidth Product IC = 500 mA, VCE = 10 V fT (c) 1997 Fairchild Semiconductor Corporation D44H8 / NZT44H8 Rev. 1.1.0 0.52 50 0.65 V MHz www.fairchildsemi.com 2 D44H8 / NZT44H8 -- NPN Power Amplifier Thermal Characteristics(3) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.8 200 Vce = 5V 125 C 25 C 100 0.4 50 - 40 C 0.2 - 40 C 0 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 Figure 3. Typical Pulsed Current Gain vs. Collector Current 25 C 125 C 0 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) = 10 0.6 150 2 1.4 = 10 V CE = 5V 1.2 1.5 - 40 C 1 25 C I C - 40 C 0.8 125 C 1 - COLLECTOR CURRENT (A) 25 C 125 C 0.6 0.5 0.1 1 0.4 0.1 10 1 I C - COLLECTOR CURRENT (A) 10 P 4Q ICBO- COLLECTOR CURRENT (nA) Figure 5. Base-Emitter Saturation Voltage vs. Collector Current Figure 6. Base-Emitter On Voltage vs. Collector Current 100 V CB = 50V 10 1 0.1 0.01 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 Figure 8. Junction Capacitance vs. Reverse Bias Voltage Figure 7. Current Cut-Off Current vs. Ambient Temperature (c)1997 Fairchild Semiconductor Corporation D44H8 / NZT44H8 Rev. 1.1.0 www.fairchildsemi.com 3 D44H8 / NZT44H8 -- NPN Power Amplifier Typical Performance Characteristics Figure 9. Safe Operating Area TO-220 PD - POWER DISSIPATION (W) Figure 10. Maximum Power Dissipation vs. Case Temperature 1.5 1.25 1 0.75 0.5 0.25 0 Figure 11. Maximum Power Dissipation vs. Ambient Temperature SOT-223 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 12. Power Dissipation vs. Ambient Temperature Figure 13. Thermal Response in TO-220 Package (c)1997 Fairchild Semiconductor Corporation D44H8 / NZT44H8 Rev. 1.1.0 www.fairchildsemi.com 4 D44H8 / NZT44H8 -- NPN Power Amplifier Typical Performance Characteristics (Continued) SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. APPROVED July-14-2008 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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