TDA2030
14W Hi-Fi AUDIO AMPLIFIER
DESCRIPTION
The TDA2030 is a monolithic integrated circuit in
Pentawattpackage, intended for use as a low
frequency class AB amplifier. Typically it provides
14W output power (d = 0.5%) at 14V/4;at±14V
the guaranteedoutput poweris 12W on a 4load
and 8Won a 8(DIN45500).
TheTDA2030provideshighoutputcurrentandhas
very low harmonic and cross-over distortion.
Further the device incorporates an original (and
patented) short circuit protection system compris-
ing an arrangement for automatically limiting the
dissipated power so as to keep the working point
of the outputtransistorswithin their safe operating
area.A conventionalthermal shut-down system is
also included.
March 1993
Symbol Parameter Value Unit
VsSupply voltage ±18 V
ViInput voltage Vs
ViDifferential input voltage ±15 V
IoOutput peak current (internally limited) 3.5 A
Ptot Powerdissipation at Tcase =90
°
C20W
T
stg,T
jStoprage and junction temperature -40 to 150 °C
ABSOLUTE MAXIMUM RATINGS
TYPICALAPPLICATION
Pentawatt
ORDERING NUMBERS :TDA2030H
TDA2030V
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PIN CONNECTION (topview)
TEST CIRCUIT
+VS
OUTPUT
-VS
INVERTING INPUT
NON INVERTING INPUT
TDA2030
Symbol Parameter Test conditions Min. Typ. Max. Unit
VsSupply voltage ±6±18 V
IdQuiescent drain current
Vs=±18V
40 60 mA
IbInput bias current 0.2 2 µA
Vos Input offset voltage ±2±20 mV
Ios Input offset current ±20 ±200 nA
PoOutput power d = 0.5% Gv=30dB
f = 40 to 15,000 Hz
RL=4
R
L=8
12
814
9W
W
d = 10%
f = 1 KHz
RL=4
R
L=8
G
v=30dB
18
11 W
W
d Distortion Po= 0.1 to 12W
RL=4
G
v=30dB
f = 40 to 15,000 Hz 0.2 0.5 %
Po= 0.1 to 8W
RL=8G
v=30dB
f = 40 to 15,000 Hz 0.1 0.5 %
B Power Bandwidth
(-3 dB) Gv=30dB
P
o=12W R
L=4
10 to 140,000 Hz
RiInput resistance (pin 1) 0.5 5 M
GvVoltage gain (open loop) 90 dB
GvVoltage gain (closed loop) f = 1 kHz 29.5 30 30.5 dB
eNInput noise voltage B = 22 Hz to 22 KHz 310
µV
i
NInput noise current 80 200 pA
SVR Supply voltage rejection RL=4G
v=30dB
R
g=22k
V
ripple = 0.5 Veff
fripple = 100 Hz
40 50 dB
IdDrain current Po=14W
P
o=W R
L
=4
R
L=8900
500 mA
mA
TjThermal shut-down junction
temperature 145 °C
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs=±14V,Tamb =25°C unless otherwise
specified)
Symbol Parameter Value Unit
Rth j-case Thermal resistance junction-case max 3 °C/W
THERMALDATA
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TDA2030
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Figure 1. Output power vs.
supply voltage Figure 2. Output power vs.
supply voltage Figure 3. Distortion vs.
output power
Figure 4. Distortion vs.
output power Figure 5. Distortion vs.
output power Figure 6. Distortion vs.
frequency
Figure 7. Distortion vs.
frequency Figure 8. Frequency re-
sponse with different values
of the rolloff capacitor C8
(see fig.13)
Figure 9. Quiescent current
vs. supply voltage
TDA2030
Figure 10. Supply voltage
rejection vs. voltagegain Figure 11. Power dissipa-
tionand efficiencyvs.output
power
Figure 12. Maximum power
dissipation vs. supply volt-
age (sine wave operation)
APPLICATION INFORMATION
Figure13.Typicalamplifier
with split power supply Figure 14. P.C.board and component layoutfor
the circuit of fig. 13 (1 :1 scale)
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TDA2030
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APPLICATION INFORMATION (continued)
Figure15.Typicalamplifier
with single power supply Figure 16. P.C.board and component layoutfor
the circuit of fig. 15 (1 :1 scale)
Figure 17. Bridge amplifierconfiguration with split power supply (Po= 28W,Vs=±14V)
TDA2030
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig.16 should be adopted by
the designers. If different layouts are used, the
ground points of input 1 and input 2 must be well
decoupled from the ground return of the output in
which a high current flows.
Assemblysuggestion
No electrical isolation is neededbetweenthe
packageandtheheatsinkwithsinglesupplyvoltage
configuration.
Application suggestions
The recommended values of the components are
those shown on applicationcircuit of fig.13.
Different values can be used. The following table
can help the designer.
Component Recomm.
value Purpose Larger than
recommended value Smaller than
recommended value
R1 22 kClosed loop gain
setting Increase of gain Decrease of gain (*)
R2 680 Closed loop gain
setting Decrease of gain (*) Increase of gain
R3 22 kNon inverting input
biasing Increase of input
impedance Decrease of input
impedance
R4 1Frequency stability Danger of osccilat.at
high frequencies
with induct.loads
R5 3 R2 Upper frequency
cutoff Poor high frequencies
attenuation Danger of
oscillation
C1 1µFInput DC
decoupling Increase of low
frequencies cutoff
C2 22 µFInverting DC
decoupling Increase of low
frequencies cutoff
C3, C4 0.1 µFSupply voltage
bypass Danger of
oscillation
C5, C6 100 µFSupply voltage
bypass Danger of
oscillation
C7 0.22 µFFrequency stability Danger of oscillation
C8 1
2πBR1 Upper frequency
cutoff Smaller bandwidth Larger bandwidth
D1, D2 1N4001 To protect the device against output voltage spikes
(*) Closed loop gain must be higher than 24dB
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TDA2030
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SHORT CIRCUIT PROTECTION
TheTDA2030hasanoriginalcircuitwhichlimitsthe
current of the output transistors.Fig.18 showsthat
the maximum output current is a function of the
collector emitter voltage; hence the output transis-
tors work within their safe operating area (Fig. 2).
This functioncan thereforebe consideredas being
peak power limiting rather than simple current lim-
iting.
It reduces the possibility that the devicegets dam-
aged during an accidental short circuit from AC
output to ground.
Figure 18. Maximum
output current vs.
voltage [VCEsat]across
each output transistor
Figure 19. Safe operating area and
collector characteristics of the
protected power transistor
THERMAL SHUT-DOWN
The presenceof a thermallimitingcircuitoffersthe
following advantages:
1. An overload on the output (even if it is perma-
nent),oranabovelimitambienttemperaturecan
be easily supported since the Tjcannot be
higher than 150°C.
2. The heatsinkcan havea smallerfactorof safety
compared with that of a conventional circuit.
There is no possibility of devicedamage due to
high junctiontemperature.If forany reason,the
junctiontemperatureincreasesup to150°C, the
thermal shut-down simply reduces the power
dissipationat the currentconsumption.
The maximum allowable power dissipation de-
pends uponthe size ofthe externalheatsink(i.e.its
thermal resistance); fig. 22 shows this dissipable
power as a function of ambient temperature for
differentthermalresistance.
TDA2030
Figure 20.Output power and
drain current vs. case
temperature(RL=4)
Figure 21. Output power and
drain current vs. case
temperature(RL=8)
Figure 22. Maximum
allowable power dissipation
vs. ambient temperature
Figure 23. Exampleof heat-sink Dimension : suggestion.
The following table shows the length that
theheatsinkinfig.23 musthaveforseveral
values of Ptot and Rth.
Ptot (W) 12 8 6
Length of heatsink (mm) 60 40 30
Rth of heatsink (°C/W) 4.2 6.2 8.3
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TDA2030
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.4 0.126 0.134 0.142
G1 6.8 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
PENTAWATT PACKAGE MECHANICAL DATA
L2
L3L5
L7
L6
Dia.
A
C
D
E
D1
H3
H2
F
G
G1
L1
L
MM1
F1
TDA2030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which mayresult from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products arenot authorizedfor use as critical components in lifesupport devices orsystems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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TDA2030