Discrete POWER & Signal
Technologies
High Conductance Ultra Fast Diode
Sourced from Process 1P.
N
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
5D
3
12
MARKING
MMBD4148 11 MMBD4148CA A11
MMBD4148CC 13 MMBD4148SE A13
Symbol Parameter Value Units
WIV Working I nverse Voltage 75 V
IOAverage Rectified Current 200 mA
IFDC Forw ar d Cur re nt 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Characteristic Max Units
MMBD4148/SE/CC/CA*
PDTo ta l De vice Dissip at i on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
MMBD4148 / SE / CC / CA
CONNECTION DIAGRAMS
3
21
3
21
3
21
3
12 NC
4148SE
4148CC 4148CA
4148
SOT-23
3
1
2
MMBD4148 / SE / CC / CA
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
BVB r eakdo w n Volt age IR = 1 00 µA
IR = 5.0 µA100
75 V
V
IRReverse Current VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V
25
50
5.0
nA
µA
µA
VFForward Voltage IF = 10 mA 1.0 V
CODiode Capacitance VR = 0, f = 1. 0 M Hz 4. 0 pF
TRR Reverse Recovery Time IF = 10 mA, VR = 6.0 V,
IRR = 1.0 m A , RL = 1 00Ω4.0 nS
MMBD4148 / SE / CC / CA
High Conductance Low Leakage Diode
(continued)
