n-channel JFET designed for... @ VHF/UHF Amplifiers m@ Mixers = Oscillators ABSOLUTE MAXIMUM RATINGS (25C) Drain-Gate Voltage... 0... coc cee eee eae 25V Source-Gate Voltage ......... 0.0.0.0 cece ee aeees 25V Drain-Source Voltage... ......0.. 000 cece eee aces 25V Forward Gate Current...... 0.0... 0000 cece aeeee 10mA Total Device Dissipation at 25C Ambient (Derate 3.27 MW/C).. 0.0... cece cee ee 360 mW Operating Temperature Range............. 55 to 135C Storage Temperature Range............... 55 to 150C Lead Temperature Range (1/16 from case for 10 seconds) ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) Ds Siliconix Performance Curves NH See Section 5 BENEFITS @ Low Cost @ Automatic Insertion Package TO-92 See Section 7 Characteristic Min Max Unit Test Conditions Uy Gate R ci 20 nA Vv 15 V, Vpg=0 _ jate Reverse Current $F ' =o 2 Gss 2.0 LA Ss bs Ta = +100C T Gate-Source Breakdown _ ~ Ig =-10 HA = 3 A BVGss Voltage 26 G OKRA, Vos =0 s+ V Gate-Source Cutoff 41!) VGsioff) Voltage -8.0 Vps =15V, Ip =2nA c 5 toss Saturation Drain Current 2.0 20 mA Vps = 15 V, Vgg = 0 (Note 1) 6 Vos Gate-Source Voltage 0.5 -7.5 v Vos = 18 V, lp = 200uA Common-Source Forward _ 7 Sts Transconductance 2000 7500 f= 1 kHz Common-Source Forward | pj Fetves) Transconductance 1600 h Y umhos Common-Source Output 97 NY] Reva.) Conductance 200 f= 100 MHz iA Vps = 15 V, Veg = 0 M Common-Source Input 10 1 Retyis) Conductance 800 |e Common-Source Input " Ciss Capacitance 7.0 _ C S R pF f= 1 MHz ommon-Source Meverse 12 Crss Transfer Capacitance 3.0 NOTE: NH 1. Pulse test PW = 300 us; duty cycle < 3%. 4-31 1979 Siliconix incorporated cOLIdW xXIUODIGATE ALBO BACKSIDE CONTACT 10.384) | ALL DIMENSIONS IN INCHES (ALL DIMENSIONS (N MILLIMETERS) n-channel JFET designed for VHF/UHF Amplifiers Siliconix BENEFITS: Oscillators e@ Low Noise = Mixers NF = 3 dB Typical @ 400 MHz = Low Input Capacitance High Speed Wideband Switch High Gfs/Cigg Ratio TYPE PACKAGE PRINCIPAL DEVICES Single TO-72 2N3966, 2N4416-16A Single TO-92 2NS8484-6, 2N5555, 2N5668-70, MPF 102, MPF 108, MPF 112, PN4416, J304-5, U1837, U1994 Single TO-92 Lead-form KK4416-18, K304-18, KK305-18, K1837-18 Single Chip All of the above devices PERFORMANCE CURVES (25C unless otherwise noted) Drain Current & Transconductance ON Resistance & Output Conductance tp - DRAIN CURRENT (mA} Ip - DRAIN CURRENT (mA) 9fs - FORWARD TRANSCONDUCTANCE Transconductance Characteristics 7 5 Output Characteristic Vps ~ ORAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics Vos = 15 V + Vg GATE-SQURCE VOLTAGE {VOLTS} Vas GATE-SOURCE VOLTAGE {VOLTS} Transconductance vs Drain Current CE Umhos) Sts - PURWARD TRANSCONDUCT, ipss SATURATION DRAIN CURRENT (mA) Q VGs(otf} GATE-SOURCE CUTOFF VOLTAGE (VOLTS) vs Gate-Source Voltage Vps= 15 Ves=0 fs @F= 1 kHz @lp= tna 2 6 Common-Source Forward vs Gate-Source Cutoff Voltage 8000 # 60 300 n F 3 z 5 2 a 240 G BO 1 2 : 5 6g g ag00 3} E36, 180 > y S a z 2B g $ 2 3 2 Q > s2002 6S 24 10 2 m 6 m a = Qo eB 2 Vege 0 z 2 5 2 Gs 6 = 8 : f= TkHz 2 3 @ Ip = 100 uA, Vag 20 g @Vpg= 15 V. tp =1 3 0 -2 4 -6 -8 Vgstoff) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current 10K 100 r Vos = 16 V: = Yossie retin z 3 Vasioff) *-2V Vas(off) = -4 V| 4 z E 1K) = 1m == 8 - 5 & > oO 1 4 Poi oi 10 10 100 ' tg ~ DRAIN CURRENT (mA) 0.01 01 1.0 10 106 Jp DRAIN CURRENT (mA) Common-Source Output Conductance Drain Current, Transconductance and Qos OUTPUT ADMITTANCE {umhos) 1000 vs Drain-Source Voltage Vas=0 = 1kHz Vester} "4 5 10 5 20 2 30 Vpg DRAIN-SOURCE VOLTAGE (VOLTS) ON Resistance vs Ambient Temperature VALUE RELATIVE TO 25C @ Vps* 15 V, Vqg <0 Vps = 15 V, Vgs = 0, f= 1 KHz T - TEMPERATURE (C) 5-8 1979 Siliconix incorporatedPERFORMANCE CURVES (Cont'd) (25C. unless otherwise noted) S Parameters S11 Common-Source Common-Source Input Admittance Gate Operating Current vs Frequency vs Frequency vs Drain-Gate Voltage kK -110 - z 5 -100 3 Ves 20 Ip=5 -90 7 e Zz. Ww |Vvps=15Vv 3 S| vis= sis * ibis = Vas=0 = a 5 B g[2a7 21-502 tio -70 3 & E 2 & : 3 -60 0 = 3 -0. 4 r = Ue m wu io -5O = 2 z i g E y 409 2 1 < m on 5 -30 1 7 3 ~ 2 > +20 = 1 - "0 200 Oo 5 0 1 20 30 f - FREQUENCY (MHz) f - FREQUENCY (MHz) VpG DRAIN-GATE VOLTAGE (VOLTS) S Parameters S21 Common-Source Common-Source Forward Common-Source Capacitances vs Frequency Transadmittance vs Frequency vs Gate-Source Voltage 160. z z =% Vps=15V 3 t Ves = 90 f=4 2 @ 1 = g = 2 vfs* afs -} fs zc 2 Vps=15V BR & 10 a & stves-0 > 5 8 5 ZG* 2, = 502 tio 2 a a a z a c e G7 100 5 3 g = g & we oO B10 g @ 70 g g S . 190 200 400 gco f - FREQUENCY (MHz} = t~ FREQUENCY (MHz) Vas ~ GATE-SOURCE VOLTAGE (VOLTS} S Parameters S12 Common-Source Common-Source Reverse Gate Current vs Ambient viF requency Transfer Admittance vs Frequency Temperature 380 ~ 5 = = lgss @ Vas = -20 V, Vps= g . i Vos *0 1G@VDG=S5V.ID=5 mA . 70 ) a = 8 Vos = 18 V z y Yrs = ~Qrs - | brs 1.0 O Ves=0 Pp 9 1.0 z g 2g = 21, = 602 +jo 60 R z = - 3 E b 8. z Z-0.1 a a a a 50 = < . o a o & # 0.1 S o Q 3 z ao 8 = 3 an | Tos 9.000 200 9300 400 600 8001000 f FREQUENCY (MHz) f FREQUENCY (MHz) T TEMPERATURE (C} S Parameters S99 Common-Source Common-Source Output Admittance Equivalent Input Noise Voltage vs Frequency vs Frequency vs Frequency 32 5 z Vps* 15 V w - 3 Vps= 16 4 g 28 BmA . Ves =O = 4 ZG" ZL 7500+ w 2% 2 2 z w 20 2 E 2 5 = 5 16 4 a a a > g 5 ye 8 E 2. 2 3 1 ' oe g 3 A 200 300 400 600 800 1000 10 100 1K 10K 100K + - FREQUENCY (MHz) f FREQUENCY (MHz) t + FREQUENCY (Hz) 1979 Siliconix incorporated XIUODI