T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 1 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
Availa ble on
commercial
versions
Silicon 500 mW Zener Diodes
Qualified per MIL-PRF-19500/127
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This popular series of 500 mW Zener voltage regulators provides a selection from 2.4 to 12
volts in a standard 5% tolerance as wel l as available tighter 2% and 1% tolerances. These
axial-leaded, glass DO-35 Zeners feature an internal metallurgica l bond and are military
qualified to the JAN, JANTX, and JANTXV level. A RoHS compliant commercial grade only
version is also avai lab le.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA package
(MELF surface mount)
1N746AUR-1 –
1N759AUR-1 and
1N4370AUR-1 –
1N4372AUR-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N746 through 1N759A and 1N4370 through 1N4372A series.
• Standard voltage tolerance is ± 5% with optional tighter tolerances of ± 2% or 1%.
• Interna l meta llurg ic al bond.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/127.
(See part nomenclature for all available options.)
• RoHS compliant versions available (co mmer ci al grade only ).
APPLICATIONS / BENEFITS
• Regulates voltage over a broad range of temperature and current.
• Regulated voltage range fro m 2.4 to 12 V.
• Flexible axial-lea d mount ing terminals.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Minimal capacitance.
• Inherently radiation hard as described in M icros emi MicroNote 050.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Operating and Storage Temperature
TJ and TSTG
-65 to +175
ºC
Thermal Resi stan ce Jun cti on-to-Lead
@ .375 inch (9.53 m m) lead length fr om body
R
ӨJL
250
ºC/W
Thermal Resi stan ce Jun cti on-to-Ambient when
mounted on PCB
(1)
R
ӨJA
300
ºC/W
Average Rated Power Dissipation
@ TL = +50°C .375 inch (9.53 mm) from body (2)
@ TA = 55°C mounted on PCB
PM(AV)
0.5
0.4
W
Forward Voltage @ IF = 200 mA
VF
1.1
V
Solder Temperature @ 10 s
TSP
260
oC
NOTES: 1. See Figures 1 and 2 for derating curves. TA = +75 °C on an FR4 PC board with 1 oz copper
metalization.
2. The 0.5 W linearly derates starting at TL = 50 °C and goes to zero at 175 °C. For ambient TA
conditi on on a typical PC board, it linearly derates from 400 mW starting at 55 °C and goes to zero at
175 °C (see Figure 2).
T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 2 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed axial-l ead gla ss DO-35 (DO-204 AH) package.
• TERMINALS: Tin-lead or RoHS compliant anne ale d matte-tin plating (on commercial grade only). Solderable per MIL-STD-750,
method 2026.
• MARKING: Part number.
• POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number).
• WEIGHT: Approximately 0.2 gram s
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N746 A -1 (e3)
JAN = JAN level
JANTX = JANTX level
JANTXV = J ANTXV level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
Zener Voltage Tolerance
A = 5%
C = 2%
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
IZSM
Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT o r ZZK Dynamic Impedance: The small signal impedance of the diode when bi ased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT o r IZK) and superimposed on IZT or IZK respectively.
T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 3 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
ELECTRICAL CHARACTERISTICS @ 25 ºC
JEDEC
TYPE NO.
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(NOTE 2)
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(NOTE 3)
MAXIMUM
REVERSE
VOLTAGE
VR
MAXIMUM REVERSE
CURRENT
IR @ VR
MAXIMUM
ZENER
CURRENT
IZM
(NOTE 4)
TEMPERATURE
COEFFICIENT
OF ZENER
VOLTAGE
αVZ
@ 25 °C
@ +150 °C
Volts
Ohms
Volts
µA
µA
mA
% / °C
1N4370A-1
1N4371A-1
1N4372A-1
2.4
2.7
3.0
30
30
29
1.0
1.0
1.0
100
60
30
200
150
100
155
140
125
-0.085
-0.080
-0.075
1N746A-1
1N747A-1
1N748A-1
3.3
3.6
3.9
24
22
20
1.0
1.0
1.0
5
3
2
30
30
30
120
110
100
-0.070
-0.065
-0.060
1N749A-1
1N750A-1
1N751A-1
1N752A-1
4.3
4.7
5.1
5.6
18
15
14
8
1.0
1.5
2.0
2.5
2
5
5
5
50
50
50
50
90
85
75
70
-0.055 / +.020
-0.043 / +.025
-0.030 / +.030
-0.028 / +.036
1N753A-1
1N754A-1
1N755A-1
1N756A-1
6.2
6.8
7.5
8.2
3
3
4
5
3.5
4.0
5.0
6.0
5
2
2
1
50
50
50
50
65
60
55
50
+0.045
+0.050
+0.058
+0.062
1N757A-1
1N758A-1
1N759A-1
9.1
10.0
12.0
6
7
10
7.0
8.0
9.0
1
1
1
50
50
50
45
40
35
+0.068
+0.076
+0.080
NOTES:
1 The JEDEC type numbers shown (A suffix) have a ± 5% tolerance on nominal Zener voltage.
2. Volt age meas urem ents to be performed 20 seconds after applicat i on of dc test current.
3. Zener impedance derived by superimposing on IZT, a 60 cps, rms current equal to 10% IZT (20 mA). See Mic roNot e 202 for t ypical Zener
Impedance variation with different operating currents.
4. Allowance has been made for the increase i n VZ due to ZZ and for the increase in junction temperature as the unit approaches therm al
equilibrium at t he power dissipation of 400 mW.
T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 4 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
GRAPHS
TL (ºC) (Leads .375”)
FIGURE 1
Temperature-Power Derating Curve
T(PCB) (ºC) (PCB)
FIGURE 2
Temperature-Power Derating Curve
DC Operations Maximum Rating (mW)
DC Operations Maximum Rating (mW)
T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 5 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
GRAPHS (continued)
Time (s)
FIGURE 3
Therm al Impedanc e PC B mount
Time (s)
FIGURE 4
Thermal Impedance
(TL = 25 ºC at 0.375 inch (9.53 mm) from body.)
Theta (°C/W)
Theta (°C/W)
T4-LDS-0288, Rev. 1 (5/23/13) ©2013 Microsemi Corporation Page 6 of 6
1N746A-1 – 1N759A-1,
1N4370A-1 – 1N4372A-1
PACKAGE DIMENSIONS
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
0.055
0.090
1.40
2.29
3
BL
0.120
0.200
3.05
5.08
4
LD
0.018
0.023
0.46
0.58
LL
1.000
1.500
25.40
38.10
LL1
-
0.050
-
1.27
5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Dimension BD shall be measured at the largest diamete r.
4. The BL dim ens i on shall include the en tire body including s l ugs.
5. Dimension LU shall include the sections of the lead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the diode b ody and extending 0.050 inch
(1.27 mm) onto the leads.
6. In accordance with AS ME Y14.5M, diameters are equivalent to Φx symbology.