ILD205T/206T/207T/211T/213T/217T Dual Phototransistor Small Outline Surface Mount Optocoupler FEATURES * Two Channel Coupler * SOIC-8A Surface Mountable Package * Standard Lead Spacing of .05" * Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) * Isolation Test Voltage, 3000 VRMS * High Current Transfer Ratios ILD205T, 40 - 80% ILD206T, 63 -125% ILD207T, 100 - 200% ILD211T, 20% Minimum ILD213T, 100% Minimum ILD217T, 100% Minimum at 1.0 mA * High BVCEO, 70 V * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * Underwriters Laboratory File #E52744 (Code Letter Y) DESCRIPTION The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/6T/7T/11T/13T/17T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard of 30 volts. Maximum Ratings (Each Channel) Emitter Peak Reverse Voltage ..................................... 6.0 V Peak Pulsed Current (1.0 s, 300 pps) ...........1.0 A Continuous Forward Current per Channel ....30 mA Power Dissipation at 25C............................ 50 mW Derate Linearly from 25C ....................0.66 mW/C Detector Collector-Emitter Breakdown Voltage............... 70 V Emitter-Collector Breakdown Voltage.............. 7.0 V Power Dissipation per Channel .................. 125 mW Derate Linearly from 25C ....................1.67 mW/C Package Total Package Dissipation at 25C Ambient (2 LEDs + 2 Detectors, 2 Channels)....... 300 mW Derate Linearly from 25C ......................4.0 mW/C Storage Temperature ...................-55C to +150C Operating Temperature ...............-55C to +100C Soldering Time at 260C ............................. 10 sec. Dimensions in inches (mm) Pin 1 Anode 1 .120.002 (3.05.05) 8 Collector Cathode 2 7 Emitter C L .154.002 Anode 3 (3.91.05) .240 (6.10) 6 Collector Cathode 4 5 Emitter .016 (.41) .230.002 (5.84.05) 40 .015.002 (.38.05) .058 (1.49) .125 (3.18) .008 (.20) .004 (.10) .008 (.20) .050 (1.27) typ. .040 (1.02) 7 5 max. R.010 (.25) max. .020.004 (.5.10) 2 plcs. Lead Coplanarity .001 (.04) max. Table 1. Characteristics TA=25C Parameter Min. Typ. Max. Unit Condition Forward Voltage -- 1.2 1.55 V IF=10 mA Reverse Current -- 0.1 100 A VR=6.0 V Capacitance -- 25 -- pF VR=0 BVCEO 70 -- -- V IC=10 A BVECO 7.0 -- -- V IE=10 A ICEO -- 5.0 50 nA VCE=10 V IF=0 -- 10 -- pF VCE=0 % IF=10 mA Emitter Detector Breakdown Voltage Collector-Emitter Capacitance Package DC Current Transfer, ILD205 VCE=5.0 V ILD206 40 -- 80 63 -- 125 ILD207 100 -- 200 ILD211 20 -- -- ILD213 100 -- -- ILD205 13 30 -- ILD206 22 45 -- ILD207 34 70 -- ILD217 IF=1.0 mA 100 120 -- Collector-Emitter Saturation Voltage VCE(sat) -- -- 0.4 V IF=10 mA IC=2.5 mA Capacitance, Input to Output -- 0.5 -- pF -- Isolation Test Voltage 3000 -- VRMS t=1.0 sec. Resistance, Input to Output -- 100 -- G -- Turn-on Time -- 5.0 -- s Turn-off Time -- 4.0 -- s IC=2.0 mA RL= 100 VCC=5.0 V 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-181 February 12, 2001-10 Figure 1. Forward current versus forward voltage Figure 5. Switching speed versus load resistor Switching speed (s) 103 IF=10 mA Pulse width=100ms Duty cycle=50% Toff 102 Ton 101 100 .1 1 10 100 Rl - Load Resistor (K) NIc Normalized Collector Current Figure 2. Collector-emitter current versus temperature 1.2 1.0 IF=10 mA 0.8 0.6 IF=5 mA Coll current normalized @ IF=10 mA VCE=10 V TA=25C 0.4 0.2 IF=1 mA 0.0 0 2 4 6 8 10 12 V CE-Collector to Emitter Voltage (V) Figure 7. Power dissipation versus ambient temperature 1.2 Package Power Dissipation (mw) NCTRce - Normalized CTRce Figure 3. Normalized CTRce versus forward current CTR normalized @ IF = 10 mA TA = 25C 1.0 0.8 VCE=5 V 0.6 0.4 VCE=0.4 V 0.2 0.0 .01 .1 1 10 IF - LED Current - (mA) 100 Figure 4. CTR (normalized) versus temperature NCTRce - normalized CTRce Figure 6. Collector current versus temperature 200 Total pkg 150 100 50 per channel 0 25 50 75 100 125 TA - Ambient Temperature (C) Figure 8. Switching time test schematic and waveform 1.2 VCC=5 V 1.0 Input IF=10 mA 0.8 0.6 IF=5 mA 0.4 0.2 IF=1 mA RL VOUT INPUT 0 OUTPUT 0 CTR (nonsat) normalized @ IF=10 mA VCE=10 V TA=25C ton toff tpdon 10% tpdof td tr tr ts 10% 50% 50% 90% 90% 0.0 20 40 60 80 TA - Temperature (C) 100 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) ILD205T/206T/207T/211T/213T/217T 2-182 February 12, 2001-10