2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–181 February 12, 2001-10
FEATURES
• Two Channel Coupler
• SOIC-8A Surface Mountable Package
• Standard Lead Spacing of .05"
• Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 V
RMS
• High Current Transfer Ratios
ILD205T, 40 – 80%
ILD206T, 63 –125%
ILD207T, 100 – 200%
ILD211T, 20% Minimum
ILD213T, 100% Minimum
ILD217T, 100% Minimum at 1.0 mA
• High BV
CEO
, 70 V
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
• Underwriters Laboratory File #E52744
(Code Letter Y)
DESCRIPTION
The ILD205T/206T/207T/211T/213T/217T are opti-
cally coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal infor-
mation, including a DC level, can be transmitted by
the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205T/6T/7T/11T/13T/17T come in a standard
SOIC-8A small outline package for surface mount-
ing which makes it ideally suited for high density
applications with limited space. In addition to elimi-
nating through-holes requirements, this package
conforms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a nar-
row tolerance in the electrical design of the adjacent cir-
cuits. The high BV
CEO
of 70 volts gives a higher safety
margin compared to the industry standard of 30 volts.
Maximum Ratings
(Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1.0
µ
s, 300 pps) ...........1.0 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25
°
C............................50 mW
Derate Linearly from 25
°
C ....................0.66 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Collector Breakdown Voltage..............7.0 V
Power Dissipation per Channel.................. 125 mW
Derate Linearly from 25
°
C ....................1.67 mW/
°
C
Package
Total Package Dissipation at 25
°
C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 300 mW
Derate Linearly from 25
°
C ......................4.0 mW/
°
C
Storage Temperature ...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Soldering Time at 260
°
C ............................. 10 sec.
ILD205T/206T/207T/211T/213T/217T
Dual Phototransistor
Small Outline Surface Mount Optocoupler
Table 1. Characteristics
T
A
=25
°
C
Parameter Min. Typ. Max. Unit Condition
Emitter
Forward Voltage — 1.2 1.55 V
I
F
=10 mA
Reverse Current — 0.1 100
µ
A
V
R
=6.0 V
Capacitance — 25 — pF
V
R
=0
Detector
Breakdown Voltage BV
CEO
70 — — V
I
C
=10 µA
BV
ECO
7.0 — — V
I
E
=10 µA
I
CEO
— 5.0 50 nA
V
CE
=10 V
I
F
=0
Collector-Emitter
Capacitance
—10—pF
V
CE
=0
Package
DC Current Transfer,
V
CE
=5.0 V
ILD205 40 — 80 %
I
F
=10 mA
ILD206 63 — 125
ILD207 100 — 200
ILD211 20 — —
ILD213 100 — —
ILD205 13 30 —
I
F
=1.0 mA
ILD206 22 45 —
ILD207 34 70 —
ILD217 100 120 —
Collector-Emitter Saturation
Voltage
V
CE(sat)
— — 0.4 V
I
F
=10 mA
I
C
=2.5 mA
Capacitance, Input to Output — 0.5 — pF —
Isolation Test Voltage 3000 — V
RMS
t=1.0 sec.
Resistance, Input to Output — 100 — G
Ω
—
Turn-on Time — 5.0 —
µ
s
I
C
=2.0 mA
R
L
= 100
Ω
V
CC
=5.0 V
Turn-off Time — 4.0 —
µ
s
Lead
Coplanarity
±.001 (.04)
max.
C
L
.016 (.41)
.004 (.10)
.008 (.20)
.050 (1.27) typ.
.040 (1.02)
.008 (.20)
R.010
(.25) max.
.020±.004
(.5±.10)
2 plcs.
.230±.002
(5.84±.05)
.058
(1.49)
7°
40°
.015±.002
(.38±.05)
Pin 1
.154±.002
(3.91±.05)
.240
(6.10)
.120±.002
(3.05±.05)
Anode 1
Cathode 2
Anode 3
Cathode 4
8 Collector
7 Emitter
6 Collector
5 Emitter
5° max. .125 (3.18)
Dimensions in inches (mm)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD205T/206T/207T/211T/213T/217T
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–182 February 12, 2001-10
Figure 5. Switching speed versus load resistor
Figure 6. Collector current versus temperature
Figure 7. Power dissipation versus ambient temperature
Figure 8. Switching time test schematic and waveform
Switching speed (
µ
s)
.1 1 10 100
103
102
101
100
Rl - Load Resistor (KΩ
)
IF=10 mA
Pulse width=100ms
Duty cycle=50%
Toff
Ton
200
150
100
50
0
TA - Ambient Temperature (°C)
Package Power Dissipation (mw)
25 50 75 100 125
Total pkg
per channel
OUTPUT
0
10%
50%
90% 90%
50%
10%
ton toff
tpdof
tpdon
td
tr
ts
tr
INPUT
0
Input
VOUT
VCC=5 V
RL
Figure 1. Forward current versus forward voltage
Figure 2. Collector-emitter current versus temperature
Figure 3. Normalized CTR
ce
versus forward current
Figure 4. CTR (normalized) versus temperature
024681012
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CE
-Collector to Emitter Voltage (V)
NIc Normalized Collector Current
Coll current
normalized
@ IF=10 mA
VCE=10 V
TA=25°C
IF=10 mA
IF=5 mA
IF=1 mA
NCTRce - Normalized CTRce
.01 .1 1 10 100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF - LED Current - (mA)
VCE=5 V
CTR normalized @
IF = 10 mA
TA = 25°C
VCE=0.4 V
20 40 60 80 100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TA - Temperature (°C)
NCTRce - normalized CTRce
CTR (nonsat)
normalized @
IF=10 mA
VCE=10 V
TA=25°C
IF=5 mA
IF=1 mA
IF=10 mA
