MMBT3904LT1 - Avic Electronics Corp.

1.9

0.950.95

2.9

0.4

1. 3

2. 4

1.0

SOT-23 Plastic-Encapsulate Transistors

MMBT3904LT1 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 0.2 W (Tamb=25℃)

Collector current

ICM: 0.2 A

Collector-base voltage

V(BR)CBO: 60 V

Operating and storage junction temperature range

TJ, T stg: -55 ℃ to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 40 V

E mitter-base break down vol t age V(BR)EBO IE= 100µA, IC=0 6 V

Collector cut-off current ICBO V

CB= 60V, IE=0 0.1

µA

Collector cut-off current ICEO V

CE= 40V, IB=0 0.1

µA

E mitte r cut-off current IEBO V

EB= 5V, IC=0 0.1

µA

HFE(1) V

CE=10V, IC= 1mA 100 300

DC current gain HFE(2) V

CE= 1V, IC= 50m A 60

Collector-emitter saturat i on voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V

Base-emitter satu ration voltage VBE(sat) IC= 50mA, IB= 5mA 0. 95 V

Transition fre quency fT VCE= 20V, IC= 1 0mA

f=100MHz 250 MHz

Del ay Time td 35 nS

Rise Time tr

VCC=3.0Vdc, VBE=-0.5Vdc

IC=10mAdc , IB1=1.0mAdc 35 nS

Stora ge Time ts 200 nS

Fall Time tf

VCC=3.0Vdc, IC=10mAdc

IB1=IB2=1.0mA dc 50 nS

DEVICE MARKING

MMBT3904LT1=1AM

Unit: mm

SOT-23

1. BASE

2. E MITTER

3. COLLECTOR

@vic

MMBT3904LT1