2DD2656
Document number: DS31638 Rev. 2 - 2 1 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2656
NEW PRODUCT
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (2DB1694)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 1 A
Peak Pulse Collector Current ICM 2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 300 mW
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C R
θ
JA 417 °C/W
Power Dissipation (Note 4) @ TA = 25°C PD 500 mW
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C R
θ
JA 250 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V
(
BR
)
CBO 30 ⎯ ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO 30 ⎯ ⎯ V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 6 ⎯ ⎯ V IE = 10μA, IC = 0
Collector Cut-Off Current ICBO ⎯ ⎯ 0.1 μA VCB = 15V, IE = 0
Emitter Cut-Off Current IEBO ⎯ ⎯ 0.1 μA VEB = 6V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage VCE
(
SAT
)
⎯ 100 350 mV
IC = 500mA, IB = 25mA
DC Current Gain hFE 270 ⎯ 680 ⎯ VCE = 2V, IC = 100mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 5 ⎯ pF VCB = 10V, IE = 0,
f = 1MHz
Current Gain-Bandwidth Product fT ⎯ 270 ⎯ MHz VCE = 2V, IC = 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Top View Device Schematic
E
B
C
2DD2656
Document number: DS31638 Rev. 2 - 2 2 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2656
NEW PRODUCT
0
0.1
0.2
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
T , AMBIENT TEMPERA TURE (°C)
Fig . 1 Power D issipat ion vs. Am bi ent Tem per at ur e
A
0.3
0.4
0.5
0.6
0
(Note 3)
(Note 4)
0
0.2
0.4
0.6
0.8
1.0
01 2 3 45
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Col lector-Emi tter Volta ge
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
10
100
10,000
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLT AGE (V)
I/I = 20
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 T ypical Base-Emitter T u rn-On Voltage
vs. Col lector Cu r re nt
0
0.2
0.4
0.6
0.8
1.0
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
1.2
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. C ollector Curr ent
0.1
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE- EM I
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
0
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 20
CB
/I
2DD2656
Document number: DS31638 Rev. 2 - 2 3 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2656
NEW PRODUCT
0.1 1 10 100
V , REVERSE VOL TAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
1
10
1,000
C
A
P
A
C
I
T
A
N
C
E (p
F
)
100
C
ibo
C
obo
f = 1MHz
Ordering Information (Note 6)
Part Number Case Packaging
2DD2656-7 SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
SOT-323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
RN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
A
M
JL
D
BC
H
K
G
RN1
YM
2DD2656
Document number: DS31638 Rev. 2 - 2 4 of 4
www.diodes.com December 2008
© Diodes Incorporated
2DD2656
NEW PRODUCT
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
XE
Y
C
Z