A4989SLDTR-T - Allegro Microsystems

4989-DS, Rev. 1

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

Continued on the next page…

Package: 38 pin TSSOP (suffix LD)

Typical Application Diagram

Approximate size

A4989

Description

The A4989 is a dual full-bridge gate driver with integrated

microstepping translator suitable for driving a wide range of

higher power industrial bipolar 2-phase stepper motors (typically

30 to 500 W). Motor power is provided by external N-channel

power MOSFETs at supply voltages from 12 to 50 V.

This device contains two sinusoidal DACs that generate the

reference voltage for two separate fixed-off-time PWM current

controllers. These provide current regulation for external power

MOSFET full-bridges.

Motor stepping is controlled by a two-wire step and direction

interface, providing complete microstepping control at full-,

half-, quarter-, and sixteenth-step resolutions. The fixed-off

time regulator has the ability to operate in slow-, mixed-, or

fast-decay modes, which results in reduced audible motor noise,

increased step accuracy, and reduced power dissipation.

The translator is the key to the easy implementation of this

IC. Simply inputting one pulse on the STEP input drives the

motor one step (full, half, quarter, or sixteenth depending on

the microstep select input). There are no phase-sequence tables,

high frequency control lines, or complex interfaces to program.

This reduces the need for a complex microcontroller.

Features and Benefits

▪ 2-wire step and direction interface

▪ Dual full-bridge gate drive for N-channel MOSFETs

▪ Operation over 12 to 50 V supply voltage range

▪ Synchronous rectification

▪ Cross-conduction protection

▪ Adjustable mixed decay

▪ Integrated sinusoidal DAC current reference

▪ Fixed off-time PWM current control

▪ Enhanced low current control when microstepping

▪ Pin compatible with the A3986

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

The above-supply voltage required for the high-side N-channel

MOSFETs is provided by a bootstrap capacitor. Efficiency is

enhanced by using synchronous rectification and the power FETs

are protected from shoot-through by integrated crossover control

and programmable dead time.

In addition to crossover current control, internal circuit protection

provides thermal shutdown with hysteresis and undervoltage lockout.

Special power-up sequencing is not required.

This component is supplied in an 38-pin TSSOP (package LD). The

package is lead (Pb) free, with 100% matte tin leadframe plating.

Description (continued)

Selection Guide

Part Number Packing

A4989SLDTR-T Tape and reel, 4000 pieces per reel

Absolute Maximum Ratings

Characteristic Symbol Notes Rating Units

Supply Voltage VBB –0.3 to 50 V

Logic Supply Voltage VDD –0.3 to 7 V

Logic Inputs and Outputs –0.3 to 7 V

SENSEx pins –1 to 1 V

Sxx pins –2 to 55 V

LSSx pins –2 to 5 V

GHxx pins Sxx to Sxx+15 V

GLxx pins –2 to 16 V

Cxx pins –0.3 to Sxx+15 V

Operating Ambient Temperature TARange S –20 to 85 ºC

Junction Temperature TJ(max) 150 ºC

Storage Temperature Tstg –55 to 150 ºC

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Functional Block Diagram

High-Side

Drive

Low-Side

Drive

Low-Side

Drive

High-Side

Drive

PWM Latch

Blanking

Mixed Decay

PWM Latch

Blanking

Mixed Decay

Protection

UVLO

TSD

High-Side

Drive

Low-Side

Drive

Low-Side

Drive

High-Side

Drive

DAC

Bandgap Regulator

Phase 1

Control Logic

Phase 2

Control Logic

VDD VBB

GND

PFD2

ENABLE

RESET

MS2

OSC

ROSC

REF

PFD1

DIR

STEP

MS1

VREG

Phase 1A

Phase 1B

Phase 2A

Phase 2B

CREG

+5 V

C1A

VREG

CBOOT1A

C1B

CBOOT1B

RGH1A

GH1A

GL1A

GL1B

GH1B

S1A

S1B

LSS1

SENSE1

RGL1A

RGH1B

VMOTOR

RGL1B

RSENSE1

C2A

VREF

VREG

VREF

CBOOT2A

C2B

CBOOT2B

RGH2A

GH2A

GL2A

GL2B

GH2B

S2A

S2B

LSS2

SENSE2

RGL2A

RGH2B

VMOTOR

RGL2B

RSENSE2

Bridge1

Bridge2

Phase 1

Phase 2

Translator

VREG

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

ELECTRICAL CHARACTERISTICS at TA = 25°C, VDD = 5 V, VBB = 12 to 50V, unless noted otherwise

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Supply and Reference

Load Supply Voltage Range VBB 12 – 50 V

Load Supply Current IBB

ROSC = 10 k, CLOAD

= 1000 pF – – 10 mA

ENABLE = High, outputs disabled – – 6 mA

Load Supply Idle Current IBBQ RESET = 0 – – 100 A

Logic Supply Voltage Range VDD 3.0 – 5.5 V

Logic Supply Current IDD – – 10 mA

Logic Supply Idle Current IDDQ RESET = 0 – – 300 A

Regulator Output VREG IREGInt = 30 mA 11.25 – 13 V

Bootstrap Diode Forward Voltage VfBOOT IfBOOT = 10 mA 0.6 0.8 1 V

Gate Output Drive

Turn-On Rise Time trCLOAD = 1000 pF, 20% to 80% 80 120 160 ns

Turn-Off Fall Time tfCLOAD = 1000 pF, 80% to 20% 40 60 80 ns

Turn-On Propagation Delay tp(on) ENABLE low to gate drive on – 180 – ns

Turn-Off Propagation Delay tp(off) ENABLE high to gate drive off – 180 – ns

Crossover Dead Time tDEAD ROSC = 10 k, 0.6 – 1.2 s

Pull-Up On Resistance RDS(on)UP IGH = –25 mA 30 40 55 

Pull-Down On Resistance RDS(on)DN IGL = 25 mA 14 19 24 

Short-Circuit Current – Source1ISC(source) –140 –110 –80 mA

Short-Circuit Current – Sink ISC(sink) 160 200 250 mA

GHx Output Voltage VGHx CBOOTx fully charged VC – 0.2 – – V

GLx Output Voltage VGLx

VREG –

0.2 ––V

Logic Inputs

Input Low Voltage VIL – – 0.3 VDD V

Input High Voltage VIH 0.7 VDD ––V

Input Hysteresis VIHys 150 300 – mV

Input Current1IIN –1 – 1 A

RESET Pulse Width2twR 0.2 – 1 s

Continued on the next page...

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

ELECTRICAL CHARACTERISTICS (continued) at TA = 25°C, VDD = 5 V, VBB = 12 to 50V, unless noted otherwise

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Current Control

Blank Time tBLANK ROSC = 10 k, 1.2 1.5 1.8 s

Fixed Off-Time tOFF ROSC = 10 k, , SR= High 18.12 – 23.16 s

Reference Input Voltage VREF 0.8 – 2 V

Internal Reference Voltage VREFInt 20 k to VDD 1.9 2.0 2.1 V

Current Trip Point Error3EITRIP VREF = 2 V – – ±5 %

Reference Input Current1IREF –3 0 3 A

Oscillator Frequency fOSC ROSC = 10 k3.2 4 4.8 MHz

Protection

VREG Undervoltage Lockout VREGUV Decreasing VREG 7.5 8 8.5 V

VREG Undervoltage Lockout

Hysteresis VREGUVHys 100 200 – mV

VDD Undervoltage Lockout VDDUV Decreasing VDD 2.45 2.7 2.95 V

VDD Undervoltage Lockout

Hysteresis VDDUVHys 50 100 – mV

Overtemperature Shut Down TTSD Temperature increasing – 165 – ºC

Overtemperature Shut Down

Hysteresis TTSDHys Recovery = TTSD – TTSDHys –15–ºC

Control Timing

STEP Low Duration tSTEPL 1––s

STEP High Duration tSTEPH 1––s

Setup Duration tSU

Input change to STEP pulse;

MS1, MS2, DIR 200 – – ns

Hold Duration tH

Input change from STEP pulse;

MS1, MS2, DIR 200 – – ns

Wake Time Duration tWAKE 1––ms

1For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.

2A RESET pulse of this duration will reset the translator to the Home position without entering Sleep mode.

3Current Trip Point Error is the difference between actual current trip point and the target current trip point, referred to full

scale (100%) current: EITRIP = 100 × (ITRIPActual – ITRIPTarget) / IFullScale %

THERMAL CHARACTERISTICS

Characteristic Symbol Test Conditions* Value Units

Package Thermal Resistance RJA

4-layer PCB, based on JEDEC standard 51 ºC/W

1-layer PCB with copper limited to solder pads 127 ºC/W

*Additional thermal information available on Allegro website.

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

STEP

tWAKE

RESET

STEPH t

STEPL

SU H

MSx, DIR

Table 1. Microstep Resolution Truth Table

MS2 MS1 Microstep Resolution

0 0 Full Step

0 1 Half Step

1 0 Quarter Step

1 1 Sixteenth Step

Figure 1. Logic Interface Timing Diagram

Table 2. Mixed Decay Selection Truth Table

Microstep

Setting Magnitude

of Current PFDx State

PFD2 = 0, PFD1 = 0 PFD2 = 0, PFD1 = 1 PFD2 = 1, PFD1 = 0 PFD2 = 1, PFD1 = 1

Full Step

(MS2 = 0, MS1 = 0)

Rising Slow Slow Slow Slow

Falling Slow Slow Slow Slow

Half Step

(MS2 = 0, MS1 = 1)

Rising Slow Slow Slow Slow

Falling Slow 11% 26% Fast

1/4 Step

(MS2 = 1, MS1 = 0)

Rising Slow Step 1: 11% Step 1: 11% Step 1: 11%

Falling Slow 11% 26% Fast

1/16 Step

(MS2 = 1, MS1 = 1)

Rising Slow Steps 1 to 5: 11% Steps 1 to 5: 11% Steps 1 to 5: 11%

Falling Slow 11% 26% Fast

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Home microstep position at Step Angle 45º; DIR = H

Table 3. Step Sequencing Settings

Full

Step

(#)

Half

Step

(#)

1/4

Step

(#)

1/16

Step

(#)

Phase 2

Current

(% ITRIP(max))

Phase 1

Current

(% ITRIP(max))

Step

Angle

(°)

Full

Step

(#)

Half

Step

(#)

1/4

Step

(#)

1/16

Step

(#)

Phase 2

Current

(% ITRIP(max))

Phase 1

Current

(% ITRIP(max))

Step

Angle

(°)

1 1 1 0.00 100.00 0.0 5 9 33 0.00 –100.00 180.0

2 9.38 100.00 5.6 34 –9.38 –100.00 185.6

3 18.75 98.44 11.3 35 –18.75 –98.44 191.3

4 29.69 95.31 16.9 36 –29.69 –95.31 196.9

2 5 37.50 92.19 22.5 10 37 –37.50 –92.19 202.5

6 46.88 87.50 28.1 38 –46.88 –87.50 208.1

7 56.25 82.81 33.8 39 –56.25 –82.81 213.8

8 64.06 76.56 39.4 40 –64.06 –76.56 219.4

1 2 3 9 70.31 70.31 45.0 3 6 11 41 –70.31 –70.31 225.0

10 76.56 64.06 50.6 42 –76.56 –64.06 230.6

11 82.81 56.25 56.3 43 –82.81 –56.25 236.3

12 87.50 46.88 61.9 44 –87.50 –46.88 241.9

4 13 92.19 37.50 67.5 12 45 –92.19 –37.50 247.5

14 95.31 29.69 73.1 46 –95.31 –29.69 253.1

15 98.44 18.75 78.8 47 –98.44 –18.75 258.8

16 100.00 9.38 84.4 48 –100.00 –9.38 264.4

3 5 17 100.00 0.00 90.0 7 13 49 –100.00 0.00 270.0

18 100.00 –9.38 95.6 50 –100.00 9.38 275.6

19 98.44 –18.75 101.3 51 –98.44 18.75 281.3

20 95.31 –29.69 106.9 52 –95.31 29.69 286.9

6 21 92.19 –37.50 112.5 14 53 –92.19 37.50 292.5

22 87.50 –46.88 118.1 54 –87.50 46.88 298.1

23 82.81 –56.25 123.8 55 –82.81 56.25 303.8

24 76.56 –64.06 129.4 56 –76.56 64.06 309.4

2 4 7 25 70.31 –70.31 135.0 4 8 15 57 –70.31 70.31 315.0

26 64.06 –76.56 140.6 58 –64.06 76.56 320.6

27 56.25 –82.81 146.3 59 –56.25 82.81 326.3

28 46.88 –87.50 151.9 60 –46.88 87.50 331.9

8 29 37.50 –92.19 157.5 16 61 –37.50 92.19 337.5

30 29.69 –95.31 163.1 62 –29.69 95.31 343.1

31 18.75 –98.44 168.8 63 –18.75 98.44 348.8

32 9.38 –100.00 174.4 64 –9.38 100.00 354.4

5 9 33 0.00 –100.00 180.0 1 1 1 0.00 100.00 360.0

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Figure 4. Decay Modes for Quarter-Step Increments

Figure 3. Decay Modes for Half-Step IncrementsFigure 2. Decay Mode for Full-Step Increments

OUT1B

(%*)

Phase = 1,

Direction = H

OUT2B

(%*)

Phase = 2,

Direction = H

STEP

Home Microstep Position

100

–71

–100

100

–71

–100

Slow

Home Microstep Position

100

–71

–100

100

–71

–100

STEP

Slow

Mixed

Slow

Mixed

Slow

Mixed

Slow

Mixed

Slow

Mixed

Slow

OUT1B

(%*)

Phase = 1,

Direction = H

OUT2B

(%*)

Phase = 2,

Direction = H

100

–38

–71

–92

–100

100

–38

–71

–92

–100

Home Microstep Position

Slow Mixed

Mixed

Slow

Mixed

Slow Mixed

Mixed

Slow Mixed

Mixed

Slow Mixed

Mixed

STEP

Slow

IOUT1B (%*)

Phase = 1,

Direction = H

IOUT2B (%*)

Phase = 2,

Direction = H

*For precise definition of output levels, refer to table 3 *For precise definition of output levels, refer to table 3

*For precise definition of output levels, refer to table 3

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Figure 5. Decay Modes for Sixteenth-Step Increments

STEP

MixedSlow

Mixed Mixed

MixedSlow

Mixed

MixedSlow

Mixed

Slow

100

–83

–100

–96

–88

–77

–71

–63

–56

–47

–38

–29

–20

–10

Home Microstep Position

Mixed

IOUT1B (%*)

Phase = 1,

Direction = H

IOUT2B (%*)

Phase = 2,

Direction = H

100

–83

–100

–96

–88

–77

–71

–63

–56

–47

–38

–29

–20

–10

Slow

*For precise definition of output levels, refer to table 3

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Functional Description

Basic Operation

The A4989 is a complete microstepping FET driver with

built-in translator for easy operation with a minimum number

of control inputs. It is designed to operate 2-phase bipolar

stepper motors in full-, half-, quarter, and sixteenth-step

modes. The current in each of the two external power full-

bridges, all N-channel MOSFETs, is independently regulated

by a fixed off-time PWM control circuit. The full-bridge

current at each step is set by the value of an external cur-

rent sense resistor, RSENSEX , in the ground connection to the

bridge, a reference voltage, VREF, and the output of the DAC

controlled by the translator.

The use of PWM with N-channel MOSFETs provides the

most cost-effective solution for a high efficiency motor

drive. The A4989 provides all the necessary circuits to

ensure that the gate-source voltage of both high-side and

low-side external MOSFETs are above 10 V, and that there is

no cross-conduction (shoot through) in the external bridge.

Specific functions are described more fully in the following

sections.

Power Supplies

Two power connections are required. The motor power sup-

ply should be connected to VBB to provide the gate drive

levels. Power for internal logic is provided by the VDD

input. Internal logic is designed to operate from 3 to 5.5 V,

allowing the use of 3.3 or 5 V external logic interface cir-

cuits.

GND The ground pin is a reference voltage for internal logic

and analog circuits. There is no large current flow through

this pin. To avoid any noise from switching circuits, this

should have an independent trace to the supply ground star

point.

VREG The voltage at this pin is generated by a low-drop-out

linear regulator from the VBB supply. It is used to oper-

ate the low-side gate drive outputs, GLxx, and to provide

the charging current for the bootstrap capacitors, CBOOTx.

To limit the voltage drop when the charge current is pro-

vided, this pin should be decoupled with a ceramic capaci-

tor, CREG, to ground. The value CREG should typically

be 40 times the value of the bootstrap capacitor for PWM

frequencies up to 14 kHz. Above 14 kHz, the minimum

recommended value can be determined from the following

formula:

CREG > CBOOT × 3 × fPWM ,

where CREG and CBOOT are in nF, and fPWM is the maximum

PWM frequency, in kHz. VREG is monitored, and if the volt-

age becomes too low, the outputs will be disabled.

REF The reference voltage, VREF, at this pin sets the

maximum (100%) peak current. The REF input is internally

limited to 2 V when a 20 kpull-up resistor is connected

between VREF and VDD. This allows the maximum refer-

ence voltage to be set without the need for an externally-

generated voltage. An external reference voltage below the

maximum can also be input on this pin. The voltage at VREF

is divided by 8 to produce the DAC reference voltage level.

OSC The internal FET control timing is derived from a

master clock running at 4 MHz typical. A resistor, ROSC,

connected from the OSC pin to GND sets the frequency (in

MHz) to approximately:

fOSC ≈ 100 / (6 + 1.9 × ROSC) ,

where ROSC, in k, is typically between 50 k and 10 k.

The master oscillator period is used to derive the PWM off-

time, dead time, and blanking time.

Gate Drive

The A4989 is designed to drive external power N-channel

MOSFETs. It supplies the transient currents necessary to

quickly charge and discharge the external FET gate capaci-

tance in order to reduce dissipation in the external FET

during switching. The charge and discharge rate can be

controlled using an external resistor , RGx, in series with

the connection to the gate of the FET. Cross-conduction is

prevented by the gate drive circuits which introduce a dead

time, tDEAD , between switching one FET off and the comple-

mentary FET on. tDEAD is at least 3 periods of the master

oscillator but can be up to 1 cycle longer to allow oscillator

synchronization.

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

C1A, C1B, C2A, and C2B High-side connections for the

bootstrap capacitors, CBOOTx, and positive supply for high-

side gate drivers. The bootstrap capacitors are charged to

approximately VREG when the associated output Sxx terminal

is low. When the output swings high, the voltage on this ter-

minal rises with the output to provide the boosted gate volt-

age needed for the high-side N-channel power MOSFETs.

The bootstrap capacitor should be ceramic and have a value

of 10 to 20 times the total MOSFET gate capacitance.

GH1A, GH1B, GH2A, and GH2B High-side gate drive

outputs for external N-channel MOSFETs. External series

gate resistors can be used to control the slew rate seen at

the gate, thereby controlling the di/dt and dv/dt at the motor

terminals. GHxx = 1 (high) means that the upper half of the

driver is turned on and will source current to the gate of the

high-side MOSFET in the external motor-driving bridge.

GHxx =

0 (low) means that the lower half of the driver is

turned on and will sink current from the external MOSFET’s

gate circuit to the respective Sxx pin.

S1A, S1B, S2A, and S2B Directly connected to the

motor, these terminals sense the voltages switched across the

load and define the negative supply for the floating high-side

drivers. The discharge current from the high-side MOSFET

gate capacitance flows through these connections which

should have low impedance traces to the MOSFET bridge.

GL1A, GL1B, GL2A, and GL2B Low-side gate drive

outputs for external N-channel MOSFETs. External series

gate resistors (as close as possible to the MOSFET gate)

can be used to reduce the slew rate seen at the gate, thereby

controlling the di/dt and dv/dt at the motor terminals.

GLxx = 1 (high) means that the upper half of the driver is

turned on and will source current to the gate of the low-side

MOSFET in the external motor-driving bridge. GLxx = 0

(low) means that the lower half of the driver is turned on and

will sink current from the gate of the external MOSFET to

the LSSx pin.

LSS1 and LSS2 Low-side return path for discharge of the

gate capacitors, connected to the common sources of the

low-side external FETs through low-impedance traces.

Motor Control

Motor speed and direction is controlled simply by two logic

inputs, and the microstep level is controlled by a further two

logic inputs. At power-up or reset, the translator sets the

DACs and phase current polarity to the initial Home state

(see figures 2 through 5 for home-state conditions), and sets

the current regulator for both phases to mixed-decay mode.

When a step command signal occurs on the STEP input, the

translator automatically sequences the DACs to the next

level (see table 3 for the current level sequence and current

polarity).

The microstep resolution is set by inputs MS1 and MS2 as

shown in table 1. If the new DAC level is higher or equal to

the previous level, then the decay mode for that full-bridge

will normally be slow decay. If the new DAC output level

is lower than the previous level, the decay mode for that

full-bridge will be set by the PFD1 and PFD2 inputs. The full

range of settings available is given in table 2. This automatic

current-decay selection improves microstepping performance

by reducing the distortion of the current waveform due to the

motor BEMF.

STEP A low-to-high transition on the STEP input sequences

the translator and advances the motor one increment. The

translator controls the input to the DACs as well as the direc-

tion of current flow in each winding. The size of the incre-

ment is determined by the state of the MSx inputs.

MS1 and MS2 These Microstep Select inputs are used

to select the microstepping format, per table 1. Changes to

these inputs do not take effect until the next STEP input ris-

ing edge.

DIR This Direction input determines the direction of rotation

of the motor. When low, the direction is “clockwise” and

“counterclockwise” when high. A change on this input does

not take effect until the next STEP rising edge.

Internal PWM Current Control

Each full-bridge is independently controlled by a fixed off-

time PWM current control circuit that limits the load current

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

in the phase to a desired value, ITRIP. Initially, a diagonal pair

of source and sink MOSFETs are enabled and current flows

through the motor winding and the current sense resistor,

RSENSEx. When the voltage across RSENSEx equals the

DAC output voltage, the current sense comparator resets

the PWM latch, which turns off the source MOSFET (slow

decay mode) or the sink and source MOSFETs (fast decay

mode). The maximum value of current limiting is set by the

selection of RSENSE and the voltage at the REF input, with a

transconductance function approximated by:

ITRIP(max) = VREF

/ (8 × RSENSE

)

The DAC, controlled by the translator, reduces the refer-

ence voltage, VREF

, in precise steps to produce the required

sinusoidal reference levels for the current sense comparator.

This limits the phase current trip level, ITRIP, to a portion of

the maximum current level, ITRIP(max), defined by:

ITRIP = (% ITRIP(max)

/ 100) × ITRIP(max)

See table 3 for % ITRIP(max) at each step.

Fixed Off-Time The internal PWM current control

circuitry uses the master oscillator to control the length of

time the power MOSFETs remain off. The off-time, tOFF

is nominally 87 cycles of the master oscillator (21.75 μs at

4 MHz), but may be up to 1 cycle longer to synchronize with

the master oscillator.

Blanking This function blanks the output of the current

sense comparator when the outputs are switched by the

internal current control. The comparator output is blanked to

prevent false overcurrent detection due to reverse recovery

currents of the clamp diodes and switching transients related

to the capacitance of the load. The blank time, tBLANK , is

6 cycles of the master oscillator (1.5 μs at 4 MHz). Because

the tBLANK follows after the end of tOFF, no synchronization

error occurs.

Dead Time To prevent cross-conduction (shoot through)

in the power full-bridge, a dead time is introduced between

switching one MOSFET off and switching the complemen-

tary MOSFET on. The dead time, tDEAD, is 3 cycles of the

master oscillator (750 ns at 4MHz), but may be up to 1 cycle

longer to synchronize with the master oscillator.

ENABLE This input simply turns off all the power

MOSFETs. When set at logic high, the outputs are disabled.

When set at logic low, the internal control enables the out-

puts as required. Inputs to the translator (STEP, DIR, MS1,

and MS2) and the internal sequencing logic are all active

independent of the ENABLE input state.

RESET An active-low control input used to minimize

power consumption when not in use. This disables much of

the internal circuitry, including the output MOSFETs and

internal regulator. When set at logic high, allows normal

operation and start-up of the device in the home position.

When coming out of sleep mode, wait 1 ms before issuing a

STEP command, to allow the internal regulator to stabilize.

The outputs can also be reset to the home position without

entering sleep mode. To do so, pulse the RESET input low,

with a pulse width between twR(min) and twR(max).

Mixed Decay Operation

Mixed decay is a technique that provides greater control

of phase currents while the current is decreasing. When a

stepper motor is driven at high speed, the back EMF from

the motor will lag behind the driving current. If a passive

current decay mode, such as slow decay, is used in the cur-

rent control scheme, then the motor back EMF can cause the

phase current to rise out of control. Mixed decay eliminates

this effect by putting the full-bridge initially into fast decay,

and then switching to slow decay after some time. Because

fast decay is an active (driven) decay mode, this portion of

the current decay cycle will ensure that the current remains

in control. Using fast decay for the full current decay time

(off-time) would result in a large ripple current, but switch-

ing to slow decay once the current is in control will reduce

the ripple current value. The portion of the off-time that the

full-bridge has to remain in fast decay will depend on the

characteristics and the speed of the motor.

When the magnitude of the phase current is rising, the motor

back EMF will not affect the current control and slow decay

may be used to minimize the phase current ripple. The

A4989 automatically switches between slow decay, when the

current is rising, and mixed decay, when the current magni-

tude is falling. The portion of the off-time that the full-bridge

remains in fast decay is defined by the PFD1 and PFD2

inputs. However, when high VBB voltages are used with

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

motors having low values of DC phase resistance, the minimum

current that can be controlled can be higher than the target value

required in some microstepping modes. Errors in the average

current amplitude delivered to the phases of a motor can lead to

positional errors in the holding condition and/or excessive torque

ripple and acoustic noise at low speeds.

The conditions for the loss of current control due to this effect are

just after a current zero crossing, as the magnitude of the cur-

rent increases. Introducing mixed decay over the range of steps

affected enhances current control. Because the requirements are

closely related to the microstep settings used, the relationship

between MSx and PFDx is tabulated in table 2 for clarity.

The overall result is an extension of the minimum current control

range the 4989 can achieve. The effect can be seen clearly in

figures 6 and 7, below.

Figure 6. An example of missed steps when 1/16 microstepping a

motor at low stepping speeds

Figure 7. A 4989 driving the same motor as in figure 6, using these

settings: MS1=MS2=1, PFD1=PFD2= 1

Phase Voltage (2B)

Phase Voltage (2A)

Step Voltage

Phase Current (2)

Current Control

Correct

Phase Voltage (2B)

Phase Voltage (2A)

Step Voltage

Phase Current (2)

Missed Steps

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

PFD1 and PFD2 The Percent Fast Decay pins are used to

select the portion of fast decay, according to table 2, to be used

when mixed decay is enabled. Mixed decay is enabled when a

STEP input signal commands an output current that is lower than

for the previous step. In mixed decay mode, as the trip point is

reached, the A4989 goes into fast decay mode until the specified

number of master oscillator cycles has completed. After this fast

decay portion, the A4989 switches to slow decay mode for the

remainder of the fixed off-time, tOFF.

Using PFD1 and PFD 2 to select 0% fast decay will effectively

maintain the full-bridge in slow decay at all times. This option

can be used to keep the phase current ripple to a minimum when

the motor is stationary or stepping at very low rates.

Selecting 100% fast decay will provide the fastest current control

when the current is falling and can help when the motor is being

driven at very high step rates.

SR Input used to set synchronous rectification mode. When a

PWM off-cycle is triggered, load current recirculates according

to the decay mode selected by the control logic. The synchronous

rectification feature turns on the appropriate MOSFETs during

the current decay and effectively shorts out the body diodes with

the low RDS(ON) of the MOSFET. This lowers power dissipa-

tion significantly and eliminates the need for additional Schottky

diodes. Synchronous rectification can be set to either active mode

or disabled mode.

• Active Mode When the SR pin input is logic low, active mode

is enabled and synchronous rectification will occur. This mode

prevents reversal of the load current by turning off synchro-

nous rectification when a zero current level is detected. This

prevents the motor winding from conducting in the reverse

direction.

• Disabled Mode When the SR pin input is logic high, synchro-

nous rectification is disabled. This mode is typically used when

external diodes are required to transfer power dissipation from

the power MOSFETs to external, usually Schottky, diodes.

Shutdown Operation In the event of an overtemperature

fault, or an undervoltage fault on VREG, the MOSFETs are

disabled until the fault condition is removed. At power-up, and

in the event of low voltage at VDD, the under voltage lockout

(UVLO) circuit disables the MOSFETs until the voltage at VDD

reaches the minimum level. Once VDD is above the minimum

level, the translator is reset to the home state, and the MOSFETs

are reenabled.

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Application Information

Current Sensing

To minimize inaccuracies in sensing the IPEAK current

level caused by ground-trace IR drops, the sense resistor,

RSENSEx, should have an independent return to the supply

ground star point. For low-value sense resistors, the IR drops

in the sense resistor PCB traces can be significant and should

be taken into account. The use of sockets should be avoided

as they can introduce variation in RSENSEx due to their con-

tact resistance.

Thermal Protection

All drivers are turned off when the junction temperature

reaches 165°C typical. This is intended only to protect the

A4989 from failures due to excessive junction temperatures.

Thermal protection will not protect the A4989 from continu-

ous short circuits. Thermal shutdown has a hysteresis of

approximately 15°C.

Circuit Layout

Because this is a switch-mode application, where rapid cur-

rent changes are present, care must be taken during layout of

the application PCB. The following points are provided as

guidance for layout. Following all guidelines will not always

be possible. However, each point should be carefully consid-

ered as part of any layout procedure.

Ground connection layout recommendations:

1. Decoupling capacitors for the supply pins VBB, VREG,

and VDD should be connected independently close to the

GND pin and not to any ground plane. The decoupling

capacitors should also be connected as close as possible to

the corresponding supply pin.

2. The oscillator timing resistor ROSC should be connected

to the GND pin. It should not be connected to any ground

plane, supply common, or the power ground.

3. The GND pin should be connected by an independent low

impedance trace to the supply common at a single point.

4. Check the peak voltage excursion of the transients on

the LSS pin with reference to the GND pin using a close

grounded (tip and barrel) probe. If the voltage at LSS

exceeds the absolute maximum specified in this datasheet,

add additional clamping, capacitance, or both between the

LSS pin and the AGND pin.

Other layout recommendations:

1. Gate charge drive paths and gate discharge return paths

may carry transient current pulses. Therefore, the traces from

GHxx, GLxx, Sxx, and LSSx should be as short as possible to

reduce the inductance of the circuit trace.

2. Provide an independent connection from each LSS pin

to the common point of each power bridge. It is not recom-

mended to connect LSS directly to the GND pin. The LSS

connection should not be used for the SENSE connection.

3. Minimize stray inductance by using short, wide copper

runs at the drain and source terminals of all power FETs.

This includes motor lead connections, the input power bus,

and the common source of the low-side power FETs. This

will minimize voltages induced by fast switching of large

load currents.

4. Consider the use of small (100 nF) ceramic decoupling

capacitors across the source and drain of the power FETs to

limit fast transient voltage spikes caused by trace inductance.

The above are only recommendations. Each application is

different and may encounter different sensitivities. Each

design should be tested at the maximum current, to ensure

any parasitic effects are eliminated.

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Terminal List Table

Number Name Description

1 C2A Phase 2 bootstrap capacitor drive A connection

2 GH2A Phase 2 high-side gate drive A

3 S2A Phase 2 motor connection A

4 GL2A Phase 2 low-side gate drive A

5 NC No internal connection

6 VREG Regulator decoupling capacitor connection

7 VBB Motor supply voltage

8 GL1A Phase 1 low-side gate drive A

9 S1A Phase 1 motor connection A

10 GH1A Phase 1 high-side gate drive A

11 C1A Phase 1 bootstrap capacitor drive A connection

12 C1B Phase 1 bootstrap capacitor drive B connection

13 GH1B Phase 1 high-side gate drive B

14 S1B Phase 1 motor connection B

15 GL1B Phase 1 low-side gate drive B

16 LSS1 Phase 1 low-side source connection

17 SENSE1 Phase 1 bridge current sense input

18 SR Synchronous rectification enable

19 ENABLE Output enable

20 GND Ground

21 REF Reference voltage

22 RESET Reset input

23 OSC Oscillator input, ROSC resistor connection

24 NC No internal connection

25 VDD Logic supply voltage

26 STEP Step input

27 PFD2 Percent Fast Decay input 2

28 MS1 Microstep Select input 1

29 MS2 Microstep Select input 2

30 DIR Direction input

31 PFD1 Percent Fast Decay input 1

32 SENSE2 Phase 2 bridge current sense input

33 LSS2 Phase 2 low-side source connection

34 NC No internal connection

35 GL2B Phase 2 low-side gate drive B

36 S2B Phase 2 motor connection B

37 GH2B Phase 2 high-side gate drive B

38 C2B Phase 2 bootstrap capacitor drive B connection

SENSE2

PFD1

DIR

MS2

MS1

PFD2

STEP

VDD

VREG

VBB

GL1A

S1A

GH1A

C1A

C1B

GH1B

S1B

GL1B

LSS1

SENSE1

ENABLE

C2A

GH2A

S2A

GL2A

S2B

GL2B

LSS2

OSC

RESET

REF

GND

GH2B

C2B

Control

Logic

Translator

Pin-out Diagram

Dual Full-Bridge MOSFET Driver

with Microstepping Translator

A4989

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

LD Package, 38-Pin TSSOP

1.20 MAX

4º

6.00

1.60

SEATING

PLANE

0.50

C0.10

38X C

0.30

0.10 ±0.05

0.22 ±0.05

4.40 ±0.10 6.40 ±0.20

9.70 ±0.10

0.15 +0.06

–0.05

GAUGE PLANE

SEATING PLANE

ATerminal #1 mark area

All dimensions nominal, not for tooling use

(reference JEDEC MO-153 BD-1)

Dimensions in millimeters

BReference pad layout (reference IPC SOP50P640X110-38M)

All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary

to meet application process requirements and PCB layout tolerances

PCB Layout Reference View

0.50

0.25

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information being relied upon is current.

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