2001. 12. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC846W/7W/8W
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
ᴌHigh Voltage : BC846W VCEO=65V.
ᴌFor Complementary With PNP Type BC856W/857W/858W.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
13
2
E
B
D
A
J
G
C
L
H
MM
NN
M0.42 0.10
N0.10 MIN
+
_
+
_
+
_
+
_
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC846W
VCBO
80
VBC847W 50
BC848W 30
Collector-Emitter
Voltage
BC846W
VCEO
65
VBC847W 45
BC848W 30
Emitter-Base Voltage
BC846W
VEBO
6
VBC847W 6
BC848W 5
Collector Current IC100 mA
Emitter Current IE-100 mA
Collector Power Dissipation PC100 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
MARK SPEC
Type Name
Marking
TYPE BC846W-A BC846W-B BC847W-A BC847W-B BC847W-C BC848W-A BC848W-B BC848W-C
MARK 1A 1B 1E 1F 1G 1J 1K 1L
2001. 12. 4 2/3
BC846W/7W/8W
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
NOTE : According to the value of hFE the BC846W, BC847W, BC848W are classified as follows.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain (Note)
BC846W
hFE VCE=5V, IC=2mA
110 - 450
BC847W 110 - 800
BC848W 110 - 800
Collector-Emitter Saturation Voltage
VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25
V
VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6
Base-Emitter Saturation Voltage
VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 -
V
VBE(sat) 2 IC=100mA, IB=5mA - 0.9 -
Base-Emitter Voltage
VBE(ON) 1 VCE=5V, IC=2mA 0.58 - 0.7 V
VBE(ON) 2 VCE=5V, IC=10mA - - 0.75 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
Rg=10kή, f=1kHz - 1.0 10 dB
CLASSIFICATION A B C
hFE
BC846W 110ᴕ220 200ᴕ450 -
BC847W 110ᴕ220 200ᴕ450 420ᴕ800
BC848W 110ᴕ220 200ᴕ450 420ᴕ800
2001. 12. 4 3/3
BC846W/7W/8W
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
0.1
0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
13
20
CB
10 30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
13
FE
10 30
C
h - I
4 8 12 16 20
20
40
60
80
100
I =400µA
B
I =350µA
B
I =50µA
B
I =100µA
B
I =150µA
B
I =200µA
B
I =250µA
B
I =300µA
B
CBE
0.4 0.6 0.8 1.0
0.3
0.5
1
3
5
10
30
50
100
V =5V
CE
FE C
100 300 1k
10
30
50
100
300
500
1k
SATURATION VOLTAGE
10
COLLECTOR CURRENT I (mA)
1
10
30
100
330030 100
C
1
k
BE(sat)
300
1k
V , V - I
BE(sat) CCE(sat)
V , V (V)
CE(sat)
3k
10k I /I =20
CB
VBE(sat)
VCE(sat)
ob CB
100
3
5
f=1MHz
I =0
E
V =5V
CE
