BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automatic Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
• Complementary NPN Types Available (BC817)
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
DS11208 Rev. 17 - 2 1 of 3
www.diodes.com BC807-16/-25/-40
© Diodes Incorporated
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
• Pin Connections: See Diagram
• Ordering Information: See Page 3
• Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimens mm ions in
A
E
JL
TOP VIEW
M
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM -1000 mA
Power Dissipation at TSB = 50°C (Note 1) Pd 310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) RθJSB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 403 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Typ Max Unit Test Condition
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
—
250
400
600
—
—
—
—
VCE = -1.0V, IC = -100mA
VCE = -1.0V, IC = -300mA
Collector-Emitter Saturation Voltage VCE(SAT) — — -0.7 V IC = -500mA, IB = -50mA
Base-Emitter Voltage VBE — — -1.2 V VCE = -1.0V, IC = -300mA
Collector-Emitter Cutoff Current ICES — — -100
-5.0 nA
µA VCE = -45V
VCE = -25V, Tj = 150°C
Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -4.0V
Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA,
f = 50MHz
Collector-Base Capacitance CCBO — — 12 pF VCB = -10V, f = 1.0MHz
Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
E
B
C
BC
H
GD
K
C
BE