BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units 12 V Collector-Base Voltage 20 V Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C VCEO Collector-Emitter Voltage VCES VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSV52 225 1.8 556 mW mW/C C/W (continued) Electrical Characteristics Symbol BSV52 NPN Switching Transistor TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 12 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 A, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 10 V, IE = 0 VCB = 10 V, IE = 0, TA = 125C 100 5.0 nA A ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 25 40 25 0.7 120 0.3 0.25 0.4 0.85 1.2 V V V V V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency Ccb Collector-Base Capacitance IC = 10 mA, VCE = 10 V, f = 100 MHz IE = 0, VCB = 5.0 V, f = 1.0 MHz Ceb Emitter-Base Capacitance IC = 0, VEB = 1.0 V, f = 1.0 MHz 400 MHz 4.0 pF 4.5 pF SWITCHING CHARACTERISTICS ts Storage Time IB1 = IB2 = IC = 10 mA 13 ns ton Turn-On Time 12 ns toff Turn-Off Time VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns Spice Model NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10) 3 (continued) VC E = 1.0V 150 125 C 100 25 C 50 - 40 C h FE - DC CURRENT GAIN 200 0.01 100 Base-Emitter Saturation Voltage vs Collector Current 1.4 = 10 1.2 1 0.8 0.6 0.4 - 40 C 25 C 125 C 0.1 IC 1 10 100 - COLLE CTOR CURRENT ( mA) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.5 = 10 0.4 0.3 25 C 0.2 0.1 125 C - 40 C 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1 - 40C 0.8 25 C 125 C 0.6 0.4 0.2 0.1 V CE= 1.0V 1 10 I C - COLLECTOR CURRENT (mA) 600 V CB = 20V 100 10 1 25 500 Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) V BESAT- BASE -EMITTER VOLTAG E (V) IC 0.1 1 10 - COLLECTOR CURRENT (mA) V BE(O N) - BASE-E MITTER ON VOLTAGE (V) DC Current Gain vs Collector Current V CESAT - COLLE CTOR-EMITTER VOLTAGE (V) Typical Characteristics 50 75 100 125 T A - AMBIENT TE MPERATURE (C) 150 100 BSV52 NPN Switching Transistor (continued) Typical Characteristics (continued) Output Capacitance vs Reverse Bias Voltage Switching Times vs Collector Current 5 100 SWITCHING TIMES (ns) 4 C ibo 3 C obo 2 1 12 S WITCHING TIMES ( ns) tsf 10 tss 8 6 tsd 4 tsr I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V 0 25 T A 50 75 - AMBIENT TE MPERATURE (C) 100 Storage Time vs Turn On and Turn Off Base Currents -12 I C = 10 mA VCC = 3.0 V -10 -8 t s= 3.0 ns -6 4.0 ns -4 -2 0 20 tsr 10 t sf 5 2 6.0 ns 0 2 4 6 8 I B1 - TURN ON BASE CURRENT (mA) 10 tss ts d 2 50 I B2 - TURN OFF BASE CURRENT (mA) 0.5 1 5 10 REVERSE BIAS VOLTAGE (V) Switching Times vs Ambient Temperature 2 VCC = 3.0 V I C = 10 I B1 = I B2 = 10 50 1 0 0.1 I B2 - TURN OFF BASE CURRENT (mA) CAPACITANCE (pF) F = 1.0MHz I B2 - TURN OFF BASE CURRENT (mA) BSV52 NPN Switching Transistor 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) 300 Storage Time vs Turn On and Turn Off Base Currents -12 I C = 10 mA VCC = 3.0 V -10 3 -8 t s= 3.0 ns -6 4.0 ns -4 -2 0 6.0 ns 0 2 4 6 8 I B1 - TURN ON BASE CURRENT (mA) 10 Storage Time vs Turn On and Turn Off Base Currents -30 I = 100 mA C -25 VCC = 3.0 V -20 t S= 3.0 ns 4.0 ns 8.0 ns 6.0 ns -15 -10 16.0 ns -5 0 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 (continued) -6 I C = 10 mA VCC = 3.0 V -5 8.0 ns -4 t f = 7.0 ns -3 -2 10 ns -1 0 0 2 I B2 - TURN OFF BASE CURRENT (mA) 10 Fall Time vs Turn On and Turn Off Base Currents -30 I C = 100 mA 3.0 ns VCC = 3.0 V -25 -20 4.0 ns t f = 2.0 ns 8.0 ns -15 12.0 ns -10 -5 0 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 Fall Time vs Turn On and Turn Off Base Currents -12 I C = 30 mA VCC = 3.0 V -10 -8 ft 50 = 2.0 ns 5.0 ns -4 -2 0 0 2 4 6 8 10 I B1 - TURN ON BASE CURRENT (mA) 5.0 ns 1 0 1 12 Delay Time vs Base-Emitter OFF Voltage and Turn On Base Current -6 I C = 10 mA V CC = 3.0 V -5 t d = 8.0 ns -4 5.0 ns -3 4.0 ns -2 3.0 ns -1 0 1 2 5 10 20 I B1 - TURN ON BASE CURRENT (mA) 50 350 t r= 2.0 ns 10 ns 4.0 ns Power Dissipation vs Ambient Temperature VCC = 3.0 V 10 3.0 ns -6 Rise Time vs. Turn On Base Current and Collector Current P D - POWER DISSIPATION (mW) - TURN ON BASE CURRENT (mA) B1 4 6 8 - TURN ON BASE CURRENT (mA) I B2 - TURN OFF BASE CURRENT (mA) I B2 - TURN OFF BASE CURRENT (mA) Fall Time vs Turn On and Turn Off Base Currents I B1 I (continued) V BE(O)- BASE-EMITTER OFF VOLTAGE (V) Typical Characteristics 20 ns 10 100 I C - COLLECTOR CURRENT (mA) 500 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 BSV52 NPN Switching Transistor (continued) BSV52 NPN Switching Transistor Test Circuits 890 'A' VIN 0 0.1 F +6V 1 K 500 56 - 4V VOUT 91 - 10 10% 0.0023 F + 10 F 10 F VOUT ts 0.0023 F 11 V 10% Pulse waveform at point ' A' 0 500 VIN Pulse generator VIN Rise Time < 1 ns Source Impedance = 50 PW 300 ns Duty Cycle < 2% 0.1 F + 10 V FIGURE 1: Charge Storage Time Measurement Circuit VOUT 220 VIN VIN 0 10% VIN 3.3 K 10% 0 VOUT 90% t on ton VBB = - 3.0 V VIN = + 15.25 V Pulse generator VIN Rise Time < 1 ns Source Impedance = 50 PW 300 ns Duty Cycle < 2% 50 50 3.3 K 90% VOUT toff 0.0023 F 0.05 F 0.05 F 0.0023 F t off VBB = 12 V VIN = - 20.9 V To sampling oscilloscope input impedance = 50 Rise Time 1 ns VBB 0.1 F 0.1 F VCC = 3.0 V FIGURE 2: tON, tOFF Measurement Circuit 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G